3.1 - 59
3.1
4 11 R0
High Current, High Voltage 600V And 1200V,
Up To 75 Amp Dual IGBTs With FRED Diodes
DUAL IGBTS IN HERMETIC ISOLATED POWER
BLOCK PACKAGES
FEATURES
• Includes Internal FRED Diode
• Rugged Package Design
• Solder Terminals
• Very Low Saturation Voltage
• Fast Switching, Low Drive Current
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT
technology combined with a package designed specifically for high efficiency, high
current applications. They are ideally suited for Hi-Rel requirements where small
size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
GENERAL CHARACTERISTICS
@ 25°C (Per Switch)
SCHEMATIC
OM45L120PB
OM35F120PB
OM60L60PB
OM50F60PB
C1
G1
E1
C2
G2
E2
Preliminary Data Sheet
Part
V
CE
I
C
Number
(V)
(A)
V
CE(sat)
Type
OM60L60PB
600
75
1.8 Volts
Lo Sat.
OM45L120PB
1200
70
3 Volts
Lo Sat.
OM50F60PB
600
75
2.7 Volts
Hi Speed
OM35F120PB
1200
70
4 Volts
Hi Speed
3.1 - 60
3.1
OM60L60PB OM45L120PB OM50F60PB OM35F120PB
ELECTRICAL CHARACTERISTICS: OM60L60PB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 250 µA, V
CE
= 0 V
V
(BR)CES
600
-
-
V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
I
CES
-
-
0.25
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
C
= 125°C
-
-
1.0
mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
-
-
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 250 µA
V
GE(th)
2.5
-
5.0
V
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 60 A
V
CE(sat)
-
-
1.8
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
CE
= 10 V, I
C
= 60 A
g
fs
30
-
-
S
Input Capacitance
V
GE
= 0,
C
iss
-
4000
-
pF
Output Capacitance
V
CE
= 25 V,
C
oss
-
340
-
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
100
-
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
50
-
nS
Rise Time
V
CC
= 480 V, I
C
= 60 A,
t
r
-
200
-
nS
Turn-Off Delay Time
R
GS
= 2.7 , V
GS
= 15 V,
t
d(off)
-
600
-
nS
Fall Time
L = 100 µH
t
f
-
500
-
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
V
CE(clamp)
= 480 V, I
C
= 60 A
t
d(on)
-
1000
-
nS
Fall Time
V
GE
= 15 V, R
g
= 2.7
t
f
-
1000
-
nS
Turn-Off Losses
L = 100 µH, T
j
= 125°C
E
(OFF)
-
26
-
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, T
j
= 25°C
V
f
-
-
1.85
V
I
F
= 60 A, T
j
= 150°C
-
-
1.50
Maximum Reverse Current
V
R
= 600 V, T
j
= 25°C
I
r
-
-
200
µA
V
R
= 480 V, T
j
= 125°C
-
-
14
mA
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
t
rr
-
-
50
nS
V
R
= 30 V, T
j
= 25°C
ELECTRICAL CHARACTERISTICS: OM45L120PB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 3 mA, V
CE
= 0 V
V
(BR)CES
1200
-
-
V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
I
CES
-
-
3.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
-
-
1.2
mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
-
-
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 4 mA
V
GE(th)
4.0
-
8.0
V
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 45 A
V
CE(sat)
-
-
3.0
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
CE
= 10 V, I
C
= 45 A
g
fs
26
-
-
S
Input Capacitance
V
GE
= 0,
C
iss
-
4200
-
pF
Output Capacitance
V
CE
= 25 V,
C
oss
-
290
-
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
65
-
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
80
-
nS
Rise Time
V
CC
= 960 V, I
C
= 45 A,
t
r
-
250
-
nS
Turn-Off Delay Time
R
GS
= 2.7 , V
GS
= 15 V,
t
d(off)
-
450
-
nS
Fall Time
L = 100 µH
t
f
-
1200
-
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
V
CE(clamp)
= 960 V, I
C
= 45 A
t
d(on)
-
450
-
nS
Fall Time
V
GE
= 15 V, R
g
= 2.7
t
f
-
1200
-
nS
Turn-Off Losses
L = 100 µH, T
j
= 125°C
E
(OFF)
-
27
-
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 52 A, T
j
= 25°C
V
f
-
-
2.55
V
I
F
= 52 A, T
j
= 150°C
-
-
2.15
Maximum Reverse Current
V
R
= 1200 V, T
j
= 25°C
I
r
-
-
2.2
mA
V
R
= 960 V, T
j
= 125°C
-
-
14
mA
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
t
rr
-
-
60
nS
V
R
= 30 V, T
j
= 25°C
3.1 - 61
3.1
OM60L60PB OM45L120PB OM50F60PB OM35F120PB
ELECTRICAL CHARACTERISTICS: OM50F60PB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 250 µA, V
CE
= 0 V
V
(BR)CES
600
-
-
V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
I
CES
-
-
0.25
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
-
-
1.0
mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
-
-
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 250 µA
V
GE(th)
2.5
-
5.0
V
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 50 A
V
CE(sat)
-
-
2.7
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
CE
= 10 V, I
C
= 50 A
g
fs
25
-
-
S
Input Capacitance
V
GE
= 0,
C
iss
-
4000
-
pF
Output Capacitance
V
CE
= 25 V,
C
oss
-
340
-
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
100
-
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
50
-
nS
Rise Time
V
CC
= 480 V, I
C
= 50 A,
t
r
-
200
-
nS
Turn-Off Delay Time
R
GS
= 2.7 , V
GS
= 15 V, L = 100 µH
t
d(off)
-
200
-
nS
Fall Time
t
f
-
300
-
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
V
CE(clamp)
= 480 V, I
C
= 50 A
t
d(on)
-
300
-
nS
Fall Time
V
GE
= 15 V, R
g
= 2.7
t
f
-
600
-
nS
Turn-Off Losses
L = 100 µH, T
j
= 125°C
E
(OFF)
-
9.6
-
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, T
j
= 25°C
V
f
-
-
1.85
V
I
F
= 60 A, T
j
= 150°C
-
-
1.50
Maximum Reverse Current
V
R
= 600 V, T
j
= 25°C
I
r
-
-
200
µA
V
R
= 480 V, T
j
= 125°C
-
-
14
mA
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
t
rr
-
-
50
nS
V
R
= 30 V, T
j
= 25°C
ELECTRICAL CHARACTERISTICS: OM35L120PB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 3 mA, V
CE
= 0 V
V
(BR)CES
1200
-
-
V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
I
CES
-
-
3.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
-
-
1.2
mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
-
-
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 4 mA
V
GE(th)
4.0
-
8.0
V
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 35 A
V
CE(sat)
-
-
4.0
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
CE
= 10 V, I
C
= 35 A
g
fs
26
-
-
S
Input Capacitance
V
GE
= 0,
C
iss
-
3800
-
pF
Output Capacitance
V
CE
= 25 V,
C
oss
-
235
-
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
60
-
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
80
-
nS
Rise Time
V
CC
= 960 V, I
C
= 35 A,
t
r
-
150
-
nS
Turn-Off Delay Time
R
GS
= 2.7 , V
GS
= 15 V,
t
d(off)
-
400
-
nS
Fall Time
L = 100 µH
t
f
-
700
-
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
V
CE(clamp)
= 960 V, I
C
= 35 A
t
d(on)
-
400
-
nS
Fall Time
V
GE
= 15 V, R
g
= 2.7
t
f
-
1100
-
nS
Turn-Off Losses
L = 100 µH, T
j
= 125°C
E
(OFF)
-
54
-
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 52 A, T
j
= 25°C
V
f
-
-
2.55
V
I
F
= 52 A, T
j
= 150°C
-
-
2.15
Maximum Reverse Current
V
R
= 1200 V, T
j
= 25°C
I
r
-
-
2.2
mA
V
R
= 960 V, T
j
= 125°C
-
-
14
mA
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
t
rr
-
-
60
nS
V
R
= 30 V, T
j
= 25°C
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM60L60PB OM45L120PB OM50F60PB OM35F120PB
2.000
1.500
1.500
.250
2 PLCS.
.375
.875
1.375
1.750
.375
.030
.275
.510
.050
1.250
.625
.472
.125 DIA.
5 PLCS.
.166 DIA.
6 PLCS.
±010
±010
±010
.125
.515
MAX.
.324
TERMINAL 1
.225
.100 DIA.
6 PLCS.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
IGBT
Parameters
60L60HB
45L120HB
50F60HB
35F120HB
Units
V
CE
Drain Source Voltage
600
1200
600
1200
V
V
CER
Drain Gate Voltage (R
ge
= 20 K )
600
1200
600
1200
V
I
C
@ T
C
= 25°C
Continuous Drain Current
75
70
75
70
A
I
C
@ T
J
= 90°C
Continuous Drain Current
60
45
50
35
A
I
C
Pulsed
Pulsed Drain Current
200
180
200
140
A
Junction-To-Case
Linear Derating Factor
2
2
2
2
W/°C
Junction-To-Ambient
Linear Derating Factor
.03
.03
.03
.03
W/°C
R
thJC
Junction-To-Case
0.5
0.5
0.5
0.5
°C/W
R
thJA
Junction-To-Ambient
30
30
30
30
°C/W
Rectifier
PIV
600
1200
600
1200
V
I
O
60
52
60
52
A
t
rr
35
40
35
40
nSec
MECHANICAL OUTLINE