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Analog Microelectronics, Inc.
1
AME8808
750mA CMOS LDO
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Typical Application
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Functional Block Diagram
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Features
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Very Low Dropout Voltage
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Guaranteed 750mA Output
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Accurate to within 1.5%
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30
µ
A Quiescent Current
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Over-Temperature Shutdown
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Current Limiting
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Short Circuit Current Fold-back
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Space-Saving SOT-223 and DPAK-2 Package
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Factory Pre-set Output Voltages
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Low Temperature Coefficient
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General Description
The AME8808 family of positive, linear regulators feature
low quiescent current (30
µ
A typ.) with low dropout volt-
age, making them ideal for battery applications. The
space-saving SOT-223 and DPAK-2 packages are attrac-
tive for "Pocket" and "Hand Held" applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under
the "Worst" of operating conditions.
The AME8808 is stable with an output capacitance of
2.2
µ
F or greater.
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Applications
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Instrumentation
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Portable Electronics
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Wireless Devices
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Cordless Phones
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PC Peripherals
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Battery Powered Widgets
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Electronic Scales
AME8808
O U T
IN
C 2
2.2
µ
F
C 1
1
µ
F
IN
G N D
O U T
5 V
Overcurrent
Shutdown
Thermal
Shutdown
A M P
G N D
O U T
IN
R 1
R 2
V
ref
= 1 . 2 1 5 V
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Analog Microelectronics, Inc.
2
750mA CMOS LDO
AME8808
P a rt N u m b e r
M a rk in g
O u tp u t V o lta g e
P a c k a g e
O p e ra tin g T e m p . R a n g e
A M E 8 8 0 8 A E G T
A E Tyw w
3 .3 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 B E G T
A E U yw w
3 .0 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 C E G T
A E V yw w
2 .8 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 D E G T
A E W yw w
2 .5 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 E E G T
A E X yw w
3 .8 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 F E G T
A E Yyw w
3 .6 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 G E G T
A E Zyw w
3 .5 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 H E G T
A F A yw w
2 .7 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 IE G T
A F B yw w
3 .4 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 J E G T
A G U yw w
2 .8 5 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 K E G T
A H W yw w
3 .7 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 L E G T
A J G yw w
1 .5 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 M E G T
A J H yw w
1 .8 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 N E G T
A K U yw w
2 .9 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
A M E 8 8 0 8 O E G T
A K V yw w
3 .1 V
S O T-2 2 3
-4 0
O
C to + 8 5
O
C
P le a s e c o ns ult A M E s a le s o ffic e o r a utho ri ze d R e p ./D i s tri b uto r fo r o the r o utp ut vo lta g e
a nd p a c k a g e typ e a va i la b ili ty.
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Pin Configuration
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Ordering Information
1
2
3
S O T -223 T op V iew
1
2
3
D P A K -2 T op V iew
1. GND
2. V
OUT
3. V
IN
1. GND
2. V
OUT
(Connected with heat sink)
3. V
IN
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Analog Microelectronics, Inc.
3
AME8808
750mA CMOS LDO
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Ordering Information (contd.)
Part Number
Marking
Output Voltage Package Operating Temp. Range
AME8808AECS
AME8808
AECS
yyww
3.3V
DPAK-2
-40
O
C to +85
O
C
AME8808BECS
AME8808
BECS
yyww
3.0V
DPAK-2
-40
O
C to +85
O
C
AME8808CECS
AME8808
CECS
yyww
2.8V
DPAK-2
-40
O
C to +85
O
C
AME8808DECS
AME8808
DECS
yyww
2.5V
DPAK-2
-40
O
C to +85
O
C
AME8808EECS
AME8808
EECS
yyww
3.8V
DPAK-2
-40
O
C to +85
O
C
AME8808FECS
AME8808
FECS
yyww
3.6V
DPAK-2
-40
O
C to +85
O
C
AME8808GECS
AME8808
GECS
yyww
3.5V
DPAK-2
-40
O
C to +85
O
C
AME8808HECS
AME8808
HECS
yyww
2.7V
DPAK-2
-40
O
C to +85
O
C
AME8808IECS
AME8808
IECS
yyww
3.4V
DPAK-2
-40
O
C to +85
O
C
AME8808JECS
AME8808
JECS
yyww
2.85V
DPAK-2
-40
O
C to +85
O
C
AME8808KECS
AME8808
KECS
yyww
3.7V
DPAK-2
-40
O
C to +85
O
C
AME8808LECS
AME8808
LECS
yyww
1.5V
DPAK-2
-40
O
C to +85
O
C
AME8808MECS
AME8808
MECS
yyww
1.8V
DPAK-2
-40
O
C to +85
O
C
AME8808NECS
AME8808
NECS
yyww
2.9V
DPAK-2
-40
O
C to +85
O
C
AME8808OECS
AME8808
OECS
yyww
3.1V
DPAK-2
-40
O
C to +85
O
C
Please consult AME sales office or authorized Rep./Distributor for other output voltage
and package type availability.
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Analog Microelectronics, Inc.
4
750mA CMOS LDO
AME8808
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Absolute Maximum Ratings
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Recommended Operating Conditions
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Thermal Information
Pa ra m e te r
Ma x im um
Unit
Input Voltage
8
V
Output Current
1
A
Input, Output Voltage
GND - 0.3 to V
D D
+ 0.3
V
ESD Classification
B
Parameter
Rating
Unit
Supply Voltage
4.5 to 5.5
V
Ambient Temperature Range
-40 to +85
o
C
Junction Temperature
-40 to +125
o
C
Maximum
Unit
SOT-223
160
DPAK-2
60
SOT-223
625
DPAK-2
3,000
150
o
C
300
o
C
Caution: Stress above the listed absolute rating may cause permanent damage to the device
Parameter
o
C / W
mW
Maximum Lead Temperature ( 10 Sec)
Maximum Junction Temperature
Thermal Resistance (
θ
jc
)
Internal Power Dissipation (P
D
)
(
T = 100
o
C)
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Analog Microelectronics, Inc.
5
AME8808
750mA CMOS LDO
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Electrical Specifications
Parameter
Symbol
Min
Typ
Max
Units
Input Voltage
V
IN
Note 1
8
V
Output Voltage Accuracy
V
O
-1.5
1.5
%
1.5V<V
O(NOM)
<=2.0V
1400
Dropout Voltage
V
DROPOUT
2.0V<V
O(NOM)
<=2.8V
1000
2.8V<V
O(NOM)
<3.8V
750
Output Current
I
O
750
mA
Current Limit
I
LIM
750
850
mA
Short Circuit Current
I
SC
300
600
mA
Quiescent Current
I
Q
30
50
µ
A
Ground Pin Current
I
GND
30
50
µ
A
V
O
< 2.0V
0.15
%
V
O
>= 2.0V
0.02
0.1
%
Load Regulation
REG
LOAD
0.2
1
%
Over Temerature Shutdown
OTS
150
o
C
Over Temerature Hysterisis
OTH
30
o
C
V
O
Temperature Coefficient
TC
30
ppm/
o
C
f=1kHz
50
PSRR
f=10kHz
20
dB
f=100kHz
15
Co=2.2mF
30
Co=100mF
20
Note1:V
IN(min)
=V
OUT
+V
DROPOUT
Line Regulation
REG
LINE
I
O
=5mA
V
IN
=V
O
+1 to V
O
+2
I
O
=0mA
I
O
=1mA to 750mA
See
chart
mV
I
O
=1mA to 750mA
Power Supply Rejection
I
O
=100mA
C
O
=2.2mF
Output Voltage Noise
eN
f=10Hz to 100kHz
I
O
=10mA,C
BYP
=0mF
mVrms
TA = 25
o
C unless otherwise noted
Test Condition
I
O
=1mA
I
O
=750mA
V
O
=V
ONOM
-2.0%
V
O
>1.2V
V
O
>1.2V
V
O
<0.8V
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Analog Microelectronics, Inc.
6
750mA CMOS LDO
AME8808
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Detailed Description
The AME8808 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection, and thermal shutdown.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal pro-
tection circuits. During normal operation, the error am-
plifier compares the output voltage to a precision refer-
ence. Over-current and Thermal shutdown circuits be-
come active when the junction temperature exceeds
150
o
C, or the current exceeds 750mA. During thermal
shutdown, the output voltage remains low. Normal op-
eration is restored when the junction temperature drops
below 120
o
C.
The AME8808 switches from voltage mode to current mode
when the load exceeds the rated output current. This
prevents over-stress. The AME8808 also incorporates
current foldback to reduce power dissipation when the
output is short circuited. This feature becomes active
when the output drops below 0.8 volts, and reduces the
current flow by 65%. Full current is restored when the
voltage exceeds 0.8 volts.
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External Capacitors
The AME8806/8809 is stable with an output capacitor
to ground of 2.2
µ
F or greater. Ceramic capacitors have
the lowest ESR, and will offer the best AC performance.
Conversely, Aluminum Electrolytic capacitors exhibit
the highest ESR, resulting in the poorest AC response.
Unfortunately, large value ceramic capacitors are com-
paratively expensive. One option is to parallel a 0.1
µ
F
ceramic capacitor with a 10
µ
F Aluminum Electrolytic.
The benefit is low ESR, high capacitance, and low over-
all cost.
A second capacitor is recommended between the input
and ground to stabilize Vin. The input capacitor should
be at least 0.1
µ
F to have a beneficial effect.
All capacitors should be placed in close proximity to the
pins. A "Quiet" ground termination is desirable. This
can be achieved with a "Star" connection.
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Enable
The Enable pin normally floats high. When actively,
pulled low, the PMOS pass transistor shuts off, and all
internal circuits are powered down. In this state, the
quiescent current is less than 1
µ
A. This pin behaves
much like an electronic switch.
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Analog Microelectronics, Inc.
7
AME8808
750mA CMOS LDO
Load Step ( 1mA-600mA)
TIME ( 20mS/DIV)
I
L
(200mA/DIV) Vo(10mV/DIV)
I
L o a d
Output
C
L
=2.2
µ
F
CIN=2.2
µ
F
0
0
0.05
0.1
0.15
0.2
0.25
0.3
2
2.5
3
3.5
4
4.5
5
5.5
I
L O A D
= 6 0 0 m A
Drop Out Voltage vs. Output Voltage
Drop Out Voltage (V)
Output Voltage (V)
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
5
6
7
8
Ground Current vs. Input Voltage
Ground Current (
µµµµ
A)
Input Voltage (V)
85
O
C
25
O
C
-80
-70
-60
-50
-40
-30
-20
-10
0
1.0E+01
1.0E+03
1.0E+05
1.0E+07
Power Supply Rejection Ratio
PSRR (dB)
Frequency (Hz)
1 0 0 m A
1 0 m A
1 m A
100
µ
A
1 0 0 m A
100
µ
A
C
L
=2.2
µ
F Tantalum
C
B Y P
=0
Safe Operating Area
Output Current (mA)
Input-Output Voltage Differential (V)
S O T - 2 2 3
D P A K - 2
75
O
C rise
With HS capable of twice
θ
jc
Line Transient Response
V
OUT
(10mV/DIV) V
IN
(1V/DIV)
C
L O A D
=2.2
µ
F
I
L O A D
= 1 m A
V
O U T D C
=3.3V
V
I N D C
=4.5V
TIME (200mS/DIV)
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Analog Microelectronics, Inc.
8
750mA CMOS LDO
AME8808
Short Circuit Response
V
OUT
(1V/DIV) I
OUT
(200mV/DIV)
TIME (2mS/DIV)
C
L O A D
=2.2
µ
F
C
I N
= 1
µ
F
R
L O A D
< 1 0 0 m
Current Limit Response
I
OUT
(200mA/DIV) V
OUT
(1V/DIV)
TIME (2mS/DIV)
C
L O A D
=2.2
µ
F
C
I N
=1.0
µ
F
R
L O A D
=3.3
V
O U T N O M
=3.3V
Overtemperature Shutdown
V
OUT
(1V/DIV) I
OUT
(200mA/DIV)
TIME (0.5Sec/DIV)
R
L O A D
=6.6
0
0
Noise Measurement
TIME (20mS/DIV)
Vo (1mV/ DIV)
C
L
= 2.2
µ
F
NO FILTER
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Analog Microelectronics, Inc.
9
AME8808
750mA CMOS LDO
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Package Dimension
TO-252 (DPAK)
TO-252 (DPAK)
MIN
MAX
MIN
MAX
A
0.45
0.58
0.0177
0.023
B
1.60
1.95
0.06
0.0768
C
0.51
-
0.02
-
D
0.45
0.60
0.0177
0.0236
E
6.40
6.80
0.252
0.2677
F
5.40
5.80
0.2126
0.2283
G
2.20
2.85
0.0866
0.1122
H
-
* 2.30
-
* 0.0906
I
-
0.90
-
0.0354
J
-
0.97
-
0.038
K
5.20
5.50
0.20
0.22
L
0.89
2.03
0.035
0.08
* : Typical value
NOTES :
1. CONTROLLING DIMENSION : MILLIMETERS.
2. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
SYMBOLS
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
A
0.45
0.58
0.0177
0.023
B
1.60
1.95
0.06
0.0768
C
0.51
-
0.02
-
D
0.45
0.60
0.0177
0.0236
E
6.40
6.80
0.252
0.2677
F
5.40
5.80
0.2126
0.2283
G
2.20
2.85
0.0866
0.1122
H
-
* 2.30
-
* 0.0906
I
-
0.90
-
0.0354
J
-
0.97
-
0.038
K
5.20
5.50
0.20
0.22
L
0.89
2.03
0.035
0.08
* : Typical value
NOTES :
1. CONTROLLING DIMENSION : MILLIMETERS.
2. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
SYMBOLS
MILLIMETERS
INCHES
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Analog Microelectronics, Inc.
10
750mA CMOS LDO
AME8808
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