45
SQD300A40/60
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings
Tj
25
Symbol
Item
Conditions
Ratings
SQD300A40 SQD300A60
Unit
V
CBO
Collector-Base Voltage
400
600
V
V
CEX
Collector-Emitter Voltage
V
BE
2V
400
600
V
Emitter-Base Voltage
V
V
EBO
10
I
C
Collector Current
=pw
1ms
300
600
A
I
C
Reverse Collector Current
300
A
I
B
Base Current
18
A
P
T
Total power dissipation
T
C
25
1380
W
T
j
Junction Temperature
40
150
Tstg
Storage Temperature
40
125
V
ISO
Isolation Voltage
A.C.1minute
2500
V
Mounting
Torque
Mounting M6
Terminal
M6
Terminal
M4
Recommended Value 2.5
3.9
25
40
4.7
48
Recommended Value 2.5
3.9
25
40
Recommended Value 1.0
1.4
10
14
4.7
48
1.5
15
N m
(
f B)
Mass
Typical Value
460
g
Unit
A
Electrical Characteristics
Tj
25
Symbol
Item
Conditions
Ratings
Min.
Max.
3.0
1000
75
2.0
2.5
2.0
12.0
3.0
1.4
0.09
Unit
I
CBO
Collector Cut-off Current
V
CB
V
CBO
mA
I
EBO
Emitter Cut-off Current
V
EB
V
EBO
mA
300
V
CEO SUS
Collector Emitter
Sustaning Voltage
SQD300A40
SQD300A60
SQD300A40
SQD300A60
Ic
1A
V
450
400
V
CEX SUS
Ic
60A
I
B2
10A
V
600
h
FE
DC Current Gain
Ic
300A
V
CE
2V
Ic
300A
V
CE
5V
100
V
CE(sat)
Collector-Emitter Saturation Voltage
Ic
300A
I
B
4.0A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic
300A
I
B
4.0A
V
s
V
/W
ton
On Time
Storage Time
Fall Time
Transistor part
0.3
Diode part
ts
tf
Vcc
300V
Ic
300A
I
B1
6A
I
B2
6A
Ic
300A
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
SQD300A is a Darlington power transistor module which a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction,
I
C
300A, V
CEX
400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
