ML9XX18 SERIES
TYPE
NAME
ML9XX18
MITSUBISHI LASER DIODES
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
DESCRIPTION
ML9XX18 series are DFB (Distributed Feedback) laser
diodes with a monolithcally integrated EA (Electro-Absorption) modulator
emitting light beam at 1550nm.
FEATURES
10Gbps trunk-line systems
APPLICATION
MITSUBISHI
ELECTRIC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
IF
Laser forward current
CW
200
mA
VRL
Laser reverse voltage
-
2
V
Tc
Case temperature
-
+15 - +35
Tstg
Storage temperature
-
- 40 -+100
deg.C
deg.C
DFB laser diode integrated with EA
(Electro-Absorption) modulator
High side-mode-suppression-ratio (typical 40dB)
The laser is suitable to a light source for use in 10Gbps long-haul
transmission over 50km.
10Gbps long-haul transmission over 50km
Wavelengths in range from 1530nm to 1564nm
are available for WDM application
ELECTRICAL/OPTICAL CHARACTERISTICS
(Tc=25deg.C)
mW
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Ith
Thereshold current
CW,Vmod=0V
-
10
30
mA
Iop
Operation current
CW,Po=5mW,Vmod=0V
-
70
100
mA
V
Vop
Operating voltage
CW,Po=5mW,Vmod=0V
1.2
2.0
Wp
Peak wavelength
CW,Po=5mW,Vmod=0V
1564
nm
FFPh
Beam divergence angle (parallel)
CW,Po=5mW,Vmod=0V
30
deg.
FFPv
Beam divergence angle
CW,Po=5mW,Vmod=0V
-
1.0
-
-
-
(perpendicular)
SMSR
Side mode suppression ratio
Pm
CW,Po=5mW,Vmod=0V
-
-
-
45
-
deg.
35
40
dB
-
40
psec
Monitoring output
f
c
tr,tf
P p
Extinction Ratio
Rise and fall time(10%-90%)
Power penalty
12
10
-
dB
-
dB
-
1.0
CW,Po=5mW,Vmod=-1V
9.95328Gb/s,NRZ,PRBS2 -1
If=Iop
Vpp=0 - 2.5V
ditto
SMF 50km (D=800ps/nm)
@BER = 10
-10
VEA
Modulator voltage
-
-3
V
23
Ex
Cutoff frequency (-3dB)
10
14
-
GHz
High extinction ratio
1530
-
-