SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
M68745L
MITSUBISHI RF POWER MODULE
Nov. ´97
45
42
2-R1.5
5
(36.5)
18
5
8.5
1.5
1.5
6.4
32.2
35
4
5
3
2
1
OUTLINE DRAWING
PIN:
P
in
: RF INPUT
V
GG
: GATE BIAS SUPPLY
V
DD
: DRAIN BIAS SUPPLY
P
O
: RF OUTPUT
GND: FIN
H50
Dimensions in mm
BLOCK DIAGRAM
1
2
3
4
5
Load VSWR tolerance
-30
No degradation or
destroy
Symbol
Parameter
Test conditions
Limits
Min
Max
Unit
f
P
O
2f
O
Ï
in
Frequency range
Output power
2nd. harmonic
Input VSWR
Stability
V
DD
=7.2V, V
GG
=5V, P
in
=1mW,
Z
G
=Z
L
=50
Ω
V
DD
=9V, P
in
=1mW,
P
O
=3.8W (V
GG
Adjust), Z
L
=20:1
Z
G
=Z
L
=50
Ω
, V
DD
=5-9.3V,
Load VSWR <4:1
806
870
No parasitic oscillation
MHz
W
dBc
3.8
4
%
η
T
Total efficiency
30
P
O
=3.8W(V
GG
=Adjust), V
DD
=7.2V,
P
in
=1mW, Z
G
=Z
L
=50
Ω
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS
(Tc=25
°
C, Z
G
=Z
L
=50
Ω
unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°
C unless otherwise noted)
Note. Above parameters are guaranteed independently.
Symbol
Parameter
Conditions
Ratings
Unit
V
9
V
DD
Supply voltage
V
5.5
V
GG
Gate bias voltage
mW
6
P
in
Input power
W
6
P
O
Output power
°
C
-30 to +100
T
C (OP)
Operation case temperature
°
C
-40 to +100
T
stg
Storage temperature
Z
G
=Z
L
=50
Ω
f=806-870MHz, Z
G
=Z
L
=50
Ω
f=806-870MHz, Z
G
=Z
L
=50
Ω
f=806-870MHz, Z
G
=Z
L
=50
Ω
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
M68745L
MITSUBISHI RF POWER MODULE
Nov. ´97
TYPICAL PERFORMANCE DATA
6
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
FREQUENCY f (MHz)
60
0
760 780 800 820 840
880 900
η
T
P
O
Ï
in
50
20
4
2
1
0
5
3
30
40
10
V
DD
=7.2V
V
GG
=5V
P
in
=1mW
Z
G
=Z
L
=50
Ω
860
10
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
INPUT POWER P
in
(dBm)
100
0
-20 -15 -10
-5
10.00
1.00
0.01
-30
0
f=806MHz
V
DD
=7.2V
V
GG
=5V
Z
G
=Z
L
=50
Ω
η
T
P
O
10
5
-25
1
0.10
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
GATE VOLTAGE V
GG
(V)
50
25
0
35
15
5.0
4.0
3.0
1.0
0.0
10
f=806MHz
V
DD
=7.2V
P
in
=1mW
Z
G
=Z
L
=50
Ω
3.0
4.0
2.5
5.0
2.0
0.5
3.5
4.5
4.5
3.5
1.5
2.5
40
45
30
20
5
P
O
η
T
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
DRAIN SUPPLY VOLTAGE V
DD
(V)
40
0
50
30
14
8
6
2
0
20
7
9
11
4
12
4
10
10
8
5
η
T
P
O
60
12
70
10
6
f=806MHz
V
GG
=5V
P
in
=1mW
Z
G
=Z
L
=50
Ω
10
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
INPUT POWER P
in
(dBm)
100
0
-20 -15 -10
-5
10.00
1.00
0.01
-30
0
f=870MHz
V
DD
=7.2V
V
GG
=5V
Z
G
=Z
L
=50
Ω
η
T
P
O
10
5
-25
1
0.10
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
GATE VOLTAGE V
GG
(V)
50
25
0
35
15
5.0
4.0
3.0
1.0
0.0
10
3.0
4.0
2.5
5.0
2.0
0.5
3.5
4.5
4.5
3.5
1.5
2.5
40
45
30
20
5
P
O
η
T
f=870MHz
V
DD
=7.2V
P
in
=1mW
Z
G
=Z
L
=50
Ω
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
M68745L
MITSUBISHI RF POWER MODULE
Nov. ´97
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
DRAIN SUPPLY VOLTAGE V
DD
(V)
40
0
50
30
14
8
6
2
0
20
7
9
11
4
12
4
10
10
8
5
η
T
P
O
60
12
70
10
6
f=870MHz
V
GG
=5V
P
in
=1mW
Z
G
=Z
L
=50
Ω