Preliminary
Product Description
EDS-101993 Rev B
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
CGA-3318
Dual CATV Broadband High
Linearity SiGe HBT Amplifier
Product Features
Excellent CSO/CTB/XMOD Performance at
+34 dBmV Output Power per Tone
Dual Devices in each SOIC-8 Package simplify
Push-Pull configuration PC board layout
Operates from a single supply
Dropping Resistor provides
Temperature Compensation
Applications
CATV Head End Driver and Predriver Amplifier
CATV Line Driver Amplifier
Stanford Microdevices CGA-3318 is a high performance
Silicon Germanium HBT MMIC Amplifier. Designed with SiGe
process technology for excellent linearity at an exceptional
price. A Darlington configuration is utilized for broadband
performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions.
The amplifier contains two amplifiers for use in wideband
Push-Pull CATV amplifiers requiring excellent second order
performance. The second and third order non-linearities are
greatly improved in the push pull configuration.
Key 75 Ohm Parameters at Room Temperature 50-860MHz CATV Band Data
1
2
3
4
8
7
6
5
Amplifier Configuration
V
:
s
n
o
i
t
i
d
n
o
C
t
s
e
T
S
R
V
0
.
8
=
S
A
I
B
T
s
m
h
O
1
5
=
L
C
º
5
2
=
l
S
A
I
B
Z
A
m
0
5
1
=
S
Z
=
L
s
m
h
O
5
7
=
.
q
e
r
F
s
t
i
n
U
.
n
i
M
.
p
y
T
.
x
a
M
n
i
a
G
z
H
M
0
5
z
H
M
0
0
5
z
H
M
0
6
8
B
d
5
.
2
1
5
.
2
1
9
.
1
1
2
P
I
t
u
p
t
u
O
z
H
M
1
=
g
n
i
c
a
p
s
e
n
o
T
m
B
d
6
+
=
e
n
o
T
/t
u
o
P
z
H
M
0
5
z
H
M
0
0
5
z
H
M
0
6
8
m
B
d
0
7
8
6
3
7
3
P
I
t
u
p
t
u
O
z
H
M
1
=
g
n
i
c
a
p
s
e
n
o
T
m
B
d
6
+
=
e
n
o
T
/t
u
o
P
z
H
M
0
5
z
H
M
0
0
5
z
H
M
0
6
8
m
B
d
5
.
6
3
0
.
8
3
0
.
8
3
B
d
1
P
t
u
p
t
u
O
z
H
M
0
5
z
H
M
0
0
5
z
H
M
0
6
8
m
B
d
0
.
0
2
0
.
1
2
6
.
0
2
s
s
o
L
n
r
u
t
e
R
t
u
p
n
I
z
H
M
0
5
z
H
M
0
0
5
z
H
M
0
6
8
B
d
5
1
0
2
4
1
s
s
o
L
n
r
u
t
e
R
t
u
p
t
u
O
z
H
M
0
5
z
H
M
0
0
5
z
H
M
0
6
8
B
d
0
1
4
1
9
1
e
r
u
g
i
F
e
s
i
o
N
s
e
c
i
v
e
d
3
f
o
e
g
a
r
e
v
A
d
e
d
u
l
c
n
I
s
s
o
L
n
o
it
r
e
s
n
I
n
u
l
a
B
z
H
M
0
5
z
H
M
0
0
5
z
H
M
0
6
8
B
d
2
.
4
3
.
4
8
.
4
O
S
C
V
m
B
d
4
3
+
,t
a
l
F
,.
h
C
9
7
d
n
a
B
r
e
v
O
e
s
a
C
t
s
r
o
W
c
B
d
0
7
B
T
C
V
m
B
d
4
3
+
,t
a
l
F
,.
h
C
9
7
d
n
a
B
r
e
v
O
e
s
a
C
t
s
r
o
W
c
B
d
8
6
D
O
M
X
V
m
B
d
4
3
+
,t
a
l
F
,.
h
C
9
7
d
n
a
B
r
e
v
O
e
s
a
C
t
s
r
o
W
c
B
d
3
6
d
V
V
3
.
4
Note: Measured in Push-Pull Application test board
2
CGA-3318 Dual SiGe HBT Amplifier
EDS-101993 Rev B
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
Typical S-Parameters @ V
S
=8V, I
D
=150mA, R
BIAS
=51 Ohms, T
L
=+25°C
Absolute Maximum Ratings
r
e
t
e
m
a
r
a
P
ti
m
i
L
e
t
u
l
o
s
b
A
I(
t
n
e
r
r
u
C
e
c
i
v
e
D
.
x
a
M
D
)
A
m
5
2
2
r
e
w
o
P
t
u
p
n
I
F
R
.
x
a
M
m
B
d
8
1
+
T
(
.
p
m
e
T
n
o
it
c
n
u
J
.
x
a
M
J
)
C
º
0
5
1
+
T
(
e
g
n
a
R
.
p
m
e
T
g
n
it
a
r
e
p
O
L
)
C
º
5
8
+
o
t
C
º
0
4
-
.
p
m
e
T
e
g
a
r
o
t
S
.
x
a
M
C
º
0
5
1
+
s
ti
m
il
e
s
e
h
t
f
o
y
n
a
d
n
o
y
e
b
e
c
i
v
e
d
s
i
h
t
f
o
n
o
it
a
r
e
p
O
.
e
g
a
m
a
d
t
n
e
n
a
m
r
e
p
e
s
u
a
c
y
a
m
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
L
)/R
th
,j-l
-30
-25
-20
-15
-10
-5
0
200
400
600
800
1000
-40C
25C
85C
Input Return Loss vs. Frequency
S1
1
(dB)
Frequency (MHz)
-20
-17
-14
-11
-8
-5
0
200
400
600
800
1000
-40C
25C
85C
Output Return Loss vs. Frequency
S22
(dB)
Frequency (MHz)
5
7
9
11
13
15
0
200
400
600
800
1000
-40C
25C
85C
S21
(dB)
Frequency (MHz)
Gain vs. Frequency
3
CGA-3318 Dual SiGe HBT Amplifier
EDS-101993 Rev B
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
Preliminary
20
25
30
35
40
45
50
0
0.2
0.4
0.6
0.8
1
-4 0C
2 5C
8 5C
5 0
5 5
6 0
6 5
7 0
7 5
8 0
0
0.2
0 .4
0 .6
0.8
1
-4 0 C
2 5 C
8 5 C
Typical RF Performance @ V
S
=8V, I
D
=150mA, R
BIAS
=51 Ohms, T
L
=+25°C
IP3
(dBm)
Frequency (MHz)
IP2 vs. Temperature
IP2
(dBm)
Frequency (MHz)
IP3 vs. Temperature
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
0
3
6
9
1 2
1 5
6 6 M Hz
1 0 0 M Hz
2 5 0 M Hz
5 0 0 M Hz
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
10 0
0
3
6
9
1 2
1 5
6 6 M Hz
1 0 0 M H z
2 5 0 M H z
5 0 0 M H z
Second Harmonic vs. Pout and Freq.
Data shown is typical at 25C
IM2
(dBc)
Pout (dBm)
Third Harmonic vs. Pout and Freq.
Data shown is typical at 25C
IM3
(dBc)
Pout (dBm)
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
C TB
C S O -
C S O +
X m o d
0
1
2
3
4
5
6
0
200
400
600
800
1000
Push-Pull CGA-3318 Noise Figure
50MHz-900MHz, Typical
NF
(dB)
Frequency (MHz)
Push-Pull CGA-3318 CTB/CSO/XMOD
34 dBmV/Ch., 79 Ch.,Flat
dBc
Frequency (MHz)
