IRFM450
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 25°C)
I
D
Continuous Drain Current
(V
GS
= 10V , T
case
= 100°C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
I
AR
Avalanche Current
1
E
AR
Repetitive Avalanche Energy
1
dv/dt
Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
T
L
Lead Temperature measured
1/
16
” (1.6mm) from case for 10 sec.
R
θ
JC
Thermal Resistance Junction to Case
R
θ
CS
Thermal Resistance Case to Sink (Typical)
R
θ
JA
Thermal Resistance Junction to Ambient
±20V
12A
8A
48A
150W
1.2W/°C
750mJ
12A
15mJ
3.5V/ns
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149)
Dia.
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.
35 (
1
.195)
31.
40 (
1
.235)
16.
89 (
0
.665)
17.
40 (
0
.685)
13.
59 (
0
.5
35)
13.
84 (
0
.5
45)
2
0
.07 (0.
790)
2
0
.32 (0.
800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
TO–254AA – Metal Package
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V
DD
= 50V , L
≥
9.4mH , R
G
= 25
Ω
, Peak I
L
= 12A , Starting T
J
= 25°C
3) @ I
SD
≤
12A , di/dt
≤
130A/
µ
s , V
DD
≤
BV
DSS
, T
J
≤
150°C , Suggested R
G
= 2.35
Ω
N–CHANNEL
POWER MOSFET
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN TO–220 METAL AND
SURFACE MOUNT PACKAGES
• EASE OF PARALLELING
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
V
DSS
500V
I
D(cont)
12A
R
DS(on)
0.415
Ω
Ω
IRFM450
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 1mA
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
I
D
= 8A
V
GS
= 10V
I
D
= 12A
V
DS
= V
GS
I
D
= 250
µ
A
V
DS
≥
15V
I
DS
= 8A
V
GS
= 0
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 12A
V
DS
= 0.5BV
DSS
V
DD
= 250V
I
D
= 12A
R
G
= 2.35
Ω
I
S
= 12A
T
J
= 25°C
V
GS
= 0
I
F
= 12A
T
J
= 25°C
d
i
/ d
t
≤
100A/
µ
s V
DD
≤
50V
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
500
0.68
0.415
0.515
2
4
6.5
25
250
100
–100
2700
600
240
12
55
120
5
19
27
70
35
190
170
130
12
48
1.7
1600
14
Negligible
8.7
8.7
V
V / °C
Ω
V
S
(
Ω
µ
A
nA
pF
nC
ns
A
V
ns
µ
C
nH
BV
DSS
∆
BV
DSS
∆
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
STATIC ELECTRICAL RATINGS
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width
≤
300
µ
s,
δ ≤
2%
*
I
S
Current limited by pin diameter.
Notes
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
PACKAGE CHARACTERISTICS
(
Ω
)