Prelim.8/00
BCX19CSM4
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
GENERAL PURPOSE NPN TRANSISTOR
IN A HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
V
CBO
Collector - Base Voltage
V
CEO
Collector - Emitter Voltage
V
EBO
Emitter - Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50°C
R
ja
Thermal Resistance Junction to Ambient
T
stg,
T
j
Storage Temperature, Operating Temp Range
50V
45V
5V
500mA
350mW
2.0mW / °C
350°C / W
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT 23 CERAMIC
(LCC3 PACKAGE)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
PAD 1 = Collector
PAD 2 = No Collection
PAD 3 = Emitter
PAD 4 = Base
1
2
3
4
5.59 ± 0.13
(0.22 ± 0.005)
0.23
(0.009)
rad.
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009)
min.
1.
27 ± 0.
05
(0
.05 ± 0.
002
)
3.
81 ± 0.
13
(0
.15 ± 0.
00
5)
0.
64 ± 0.
08
(0
.025 ± 0.
003)
V
CEO
= 45V
I
C
= 500mA
Prelim.8/00
BCX19CSM4
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Parameter
Test Conditions
Min
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
V
BE
= 0
I
C
= 10mA
I
E
= 10
m
A
I
C
= 0
I
E
= 0
V
CB
= 20V
T
C
= 150°C
V
BE
= 0.5V
I
C
= 0
I
C
= 500mA
I
B
= 50mA
I
C
= 500mA
I
B
= 50mA
I
C
= 100mA
V
CE
= 1V
I
C
= 300mA
V
CE
= 1V
I
C
= 500mA
V
CE
= 1V
V
CES*
Collector – Emitter Sustaining Voltage
V
CEO*
Collector – Base Voltage
V
EBO*
Emitter – Base Breakdown Voltage
I
CBO*
Collector – Base Cut-off Current
I
EBO*
Emitter
Base Cut-off Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
50
45
5
100
5
10
0.62
1.2
100
600
70
40
V
nA
m
A
m
A
V
—
f
T
Transition Frequency
C
ob
Output Capacitance
I
C
= 10mA
V
CE
= 5V
f = 35MHz
V
CB
= 10V
I
E
= 0
f = 1.0MHz
100
8
MHz
pF
* Pulse test t
p
= 300
m
s ,
d £
2%
DYNAMIC CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)