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1996 Microchip Technology Inc.

DS11125G-page 1

FEATURES

• Fast Read Access Time—150 ns

• CMOS Technology for Low Power Dissipation

- 30 mA Active

- 100

A Standby

• Fast Byte Write Time—200

s or 1 ms

• Data Retention >200 years

• High Endurance - Minimum 10

Erase/Write Cycles

• Automatic Write Operation

- Internal Control Timer

- Auto-Clear Before Write Operation

- On-Chip Address and Data Latches

• Data polling

• Chip Clear Operation

• Enhanced Data Protection

- V

Detector

- Pulse Filter

- Write Inhibit

• Electronic Signature for Device Identiﬁcation

• 5-Volt-Only Operation

• Organized 2Kx8 JEDEC Standard Pinout

• 24-pin Dual-In-Line Package

• 32-pin PLCC Package

• 28-pin Thin Small Outline Package (TSOP)

8x20mm

• 28-pin Very Small Outline Package (VSOP)

8x13.4mm

• Available for Extended Temperature Ranges:

- Commercial: 0˚C to +70˚C

- Industrial: -40˚C to +85˚C

DESCRIPTION

The Microchip Technology Inc. 28C16A is a CMOS 16K

non-volatile electrically Erasable PROM. The 28C16A

is accessed like a static RAM for the read or write

cycles without the need of external components. Dur-

ing a “byte write”, the address and data are latched

internally, freeing the microprocessor address and data

bus for other operations. Following the initiation of

write cycle, the device will go to a busy state and auto-

matically clear and write the latched data using an

internal control timer. To determine when a write cycle

is complete, the 28C16A uses Data polling. Data poll-

ing allows the user to read the location last written to

when the write operation is complete. CMOS design

and processing enables this part to be used in systems

where reduced power consumption and reliability are

required. A complete family of packages is offered to

provide the utmost ﬂexibility in applications.

PACKAGE TYPES

BLOCK DIAGRAM

A10

I/O2

I/O7

I/O6

I/O5

I/O4

I/O3

I/O1

I/O0

Vcc

A10

I/07

I/06

I/05

I/04

I/03

Vss

I/02

I/01

I/00

• Pin 1 indicator on PLCC on top of package

I/O0

A10

I/O7

I/O6

Vcc

I/O1

I/O2

Vss

I/O3

I/O4

I/O5

• 1

I/O0

I/O1

I/O2

Vcc

A10

I/O7

I/O6

I/O5

I/O4

I/O3

DIP

PLCC

TSOP

VSOP

I/O0

I/O7

Input/Output

Buffers

Chip Enable/

Output Enable

Control Logic

Data Protection

Circuitry

A10

Y Gating

16K bit

Cell Matrix

Decoder

Data

Poll

Auto Erase/Write

Timing

Program Voltage

Generation

28C16A

16K (2K x 8) CMOS EEPROM

This document was created with FrameMaker 4 0 4

28C16A

DS11125G-page 2

1996 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

1.1

MAXIMUM RATINGS*

and input voltages w.r.t. V

....... -0.6V to + 6.25V

Voltage on OE w.r.t. V

..................... -0.6V to +13.5V

Voltage on A9 w.r.t. V

...................... -0.6V to +13.5V

Output Voltage w.r.t. V

................ -0.6V to V

+0.6V

Storage temperature .......................... -65˚C to +125˚C

Ambient temp. with power applied ....... -50˚C to +95˚C

*Notice:

Stresses above those listed under “Maximum Ratings”

may cause permanent damage to the device. This is a stress rat-

ing only and functional operation of the device at those or any

other conditions above those indicated in the operation listings of

this speciﬁcation is not implied. Exposure to maximum rating con-

ditions for extended periods may affect device reliability.

TABLE 1-1:

PIN FUNCTION TABLE

Name

Function

A0 - A10

Address Inputs

Chip Enable

Output Enable

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

+5V Power Supply

Ground

No Connect; No Internal Connection

Not Used; No External Connection is

Allowed

TABLE 1-2:

READ/WRITE OPERATION DC CHARACTERISTICS

= +5V

10%

Commercial (C): Tamb = 0˚C

to +70˚C

Industrial (I): Tamb = -40˚C

to +85˚C

Parameter

Status

Symbol

Min

Max

Units

Conditions

Input Voltages

Logic ‘1’

Logic ‘0;

2.0

-0.1

0.8

Input Leakage

—

-10

= -0.1V to V

Input Capacitance

—

= 0V; Tamb = 25˚C;

f = 1 MHz

Output Voltages

Logic ‘1’

Logic ‘0’

2.4

0.45

= -400

= 2.1 mA

Output Leakage

—

-10

OUT

= -0.1V to V

+0.1V

Output Capacitance

—

OUT

—

= 0V; Tamb = 25˚C;

f = 1 MHz

Power Supply Current,

Active

TTL input

—

f = 5 MHz (Note 1)

= 5.5V;

Power Supply Current,

Standby

TTL input

CMOS input

(

)

TTL

(

)

TTL

(

)

CMOS

—

100

CE = V

(0˚C to +70˚C)

CE = V

(-40˚C to +85˚C)

CE = V

-0.3 to V

Note 1: AC power supply current above 5 MHz; 1 mA/MHz.

1996 Microchip Technology Inc.

DS11125G-page 3

28C16A

TABLE 1-3:

READ OPERATION AC CHARACTERISTICS

FIGURE 1-1:

READ WAVEFORMS

AC Testing Waveform:

= 2.4V; V

= 0.45V; V

= 2.0V; Vol = 0.8V

Output Load:

1 TTL Load + 100pF

Input Rise and Fall Times: 20 ns

Ambient Temperature:

Commercial (C): Tamb =

0˚C to +70˚0˚C

Industrial (I):

Tamb =

-40˚C to +85˚C

Parameter

Sym

28C16A-15

28C16A-20

28C16A-25

Units

Conditions

Min

Max

Min

Max

Min

Max

Address to Output Delay

ACC

—

150

—

200

—

250

OE = CE = V

CE to Output Delay

—

150

—

200

—

250

OE = V

OE to Output Delay

—

100

CE = V

CE or OE High to Output Float

OFF

Output Hold from CE or OE,

whichever occurs ﬁrst

—

Endurance

—

cycles 25

C, Vcc =

5.0V, Block

Mode (Note)

Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a speciﬁc appli-

cation, please consult the Total Endurance Model which can be obtained on our BBS or website.

Address

Data

Address Valid

High Z

Valid Output

ACC

(1) t

OFF

is specified for OE or CE, whichever occurs first

(2) OE may be delayed up to t

- t

after the falling edge of CE without impact on t

(3) This parameter is sampled and is not 100% tested

High Z

OFF(1,3)

Notes:

OE(2)

CE(2)

28C16A

DS11125G-page 4

1996 Microchip Technology Inc.

TABLE 1-4:

BYTE WRITE AC CHARACTERISTICS

FIGURE 1-2:

PROGRAMMING WAVEFORMS

AC Testing Waveform:

= 2.4V and V

= 0.45V; V

= 2.0V; V

= 0.8V

Output Load:

1 TTL Load + 100 pF

Input Rise/Fall Times:

20 ns

Ambient Temperature:

Commercial (C):

Tamb

0˚C to +70˚C

Industrial (I):

Tamb

-40˚C to +85˚C

Parameter

Symbol

Min

Max

Units

Remarks

Address Set-Up Time

—

Address Hold Time

—

Data Set-Up Time

—

Data Hold Time

—

Write Pulse Width

WPL

100

—

Note 1

Write Pulse High Time

WPH

—

OE Hold Time

OEH

—

OE Set-Up Time

OES

—

Data Valid Time

—

1000

Note 2

Write Cycle Time (28C16A)

—

0.5 ms typical

Write Cycle Time (28C16AF)

—

200

100

s typical

Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the pos-

itive edge of CE or WE, whichever occurs ﬁrst.

2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until t

after the positive edge of WE or CE, whichever occurs ﬁrst.

WPL

OES

OEH

Address

CE, WE

Data In

1996 Microchip Technology Inc.

DS11125G-page 5

28C16A

FIGURE 1-3:

DATA POLLING WAVEFORMS

FIGURE 1-4:

CHIP CLEAR WAVEFORMS

TABLE 1-5:

SUPPLEMENTARY CONTROL

Mode

I/O

Chip Clear

Extra Row Read

A9 = V

Data Out

Extra Row Write

A9 = V

Data In

Note 1: V

= 12.0V

0.5V * Pulsed per programming waveforms.

Address Valid

Last Written

Address Valid

ACC

WPL

WPH

True Data Out

Data In

Valid

Data

Address

I/O7 Out

= = 1

= 10ms

= 12.0V

0.5V

28C16A

DS11125G-page 6

1996 Microchip Technology Inc.

2.0

DEVICE OPERATION

The Microchip Technology Inc. 28C16A has four basic

modes of operation—read, standby, write inhibit, and

byte write—as outlined in the following table.

2.1

Read Mode

The 28C16A has two control functions, both of which

must be logically satisﬁed in order to obtain data at the

outputs. Chip enable (CE) is the power control and

should be used for device selection. Output Enable

(OE) is the output control and is used to gate data to

the output pins independent of device selection.

Assuming that addresses are stable, address access

time (t

ACC)

is equal to the delay from CE to output (t

Data is available at the output t

after the falling edge

of OE, assuming that CE has been low and addresses

have been stable for at least t

ACC

-t

2.2

Standby Mode

The 28C16A is placed in the standby mode by applying