Philips Semiconductors
Product specification
Rectifier diodes
BY329X series
fast, soft-recovery
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass-passivated
double
diffused
SYMBOL
PARAMETER
MAX. MAX.
MAX.
UNIT
rectifier diodes in a full pack plastic
envelope
featuring
low
forward
BY329X
-800
-1000 -1200
voltage drop, fast reverse recovery
V
RRM
Repetitive peak reverse
800
1000
1200
V
and soft recovery characteristic. The
voltage
devices are intended for use in TV
I
F(AV)
Average forward current
8
8
8
A
receivers, monitors and switched
I
FSM
Non-repetitive peak
65
65
65
A
mode power supplies.
forward current
t
rr
Reverse recovery time
145
145
145
ns
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-800
-1000
-1200
V
RSM
Non-repetitive peak reverse
-
800
1000
1200
V
voltage
V
RRM
Repetitive peak reverse voltage
-
800
1000
1200
V
V
RWM
Crest working reverse voltage
-
600
800
1000
V
I
F(AV)
Average forward current
1
square wave;
δ
= 0.5;
-
8
A
T
hs
≤
83 ˚C
sinusoidal; a = 1.57;
-
7
A
T
hs
≤
90 ˚C
I
F(RMS)
RMS forward current
-
11
A
I
FRM
Repetitive peak forward current t = 25
µ
s;
δ
= 0.5;
-
16
A
T
hs
≤
83 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
65
A
current.
t = 8.3 ms
-
71
A
sinusoidal; T
j
= 150 ˚C prior
to surge; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
28
A
2
s
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction temperature
-
150
˚C
1
2
case
k
a
1
2
1 Neglecting switching and reverse current losses.
May 1995
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BY329X series
fast, soft-recovery
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
≤
65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 20 A
-
1.5
1.85
V
I
R
Reverse current
V
R
= V
RWM
; T
j
= 125 ˚C
-
0.1
1.0
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
rr
Reverse recovery time
I
F
= 1 A; V
R
> 30 V; -dI
F
/dt = 50 A/
µ
s
-
125
145
ns
Q
s
Reverse recovery charge
I
F
= 2 A; V
R
> 30 V; -dI
F
/dt = 20 A/
µ
s
-
0.5
0.7
µ
C
dI
R
/dt
Maximum slope of the reverse
I
F
= 2 A; -dI
F
/dt = 20 A/
µ
s
-
50
60
A/
µ
s
recovery current
May 1995
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BY329X series
fast, soft-recovery
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Maximum forward dissipation, P
F
= f(I
F(AV)
);
square wave current waveform; parameter D = duty
cycle = t
p
/T.
Fig.3. Maximum forward dissipation, P
F
= f(I
F(AV)
);
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)
/I
F(AV)
.
Fig.4. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150˚C prior
to surge with reapplied V
RWM
.
Fig.5. Typical and maximum forward characteristic;
I
F
= f(V
F
); parameter T
j
Fig.6. Maximum Q
s
at T
j
= 25˚C and 150˚C
100%
time
dI
dt
F
I
R
I
F
I
rrm
trr
25%
Qs
1ms
10ms
0.1s
1s
10s
tp / s
IFS (RMS) / A
BY329
100
90
80
70
60
50
40
30
20
10
0
IFSM
0
1
BY229F
VF / V
IF / A
30
20
10
0
2
0.5
1.5
max
typ
Tj = 150 C
Tj = 25 C
0
2
4
6
8
10
12
BY329
IF(AV) / A
PF / W
20
15
10
5
0
Ths(max) / C
150
54
78
102
126
0.5
0.2
0.1
D = 1.0
D =
t
p
t
p
T
T
I
t
Vo = 1.25 V
Rs = 0.03 Ohms
1
100
BY329
-dIF/dt (A/us)
Qs / uC
10
1
0.1
10
2 A
IF = 10 A
10 A
1 A
1 A
2 A
Tj = 150 C
Tj = 25 C
0
2
4
6
8
BY329
IF(AV) / A
PF / W
15
10
5
0
4
2.8
2.2
1.9
a = 1.57
Ths(max) / C
150
78
102
126
Vo = 1.25 V
Rs = 0.03 Ohms
May 1995
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BY329X series
fast, soft-recovery
Fig.7. Maximum t
rr
measured to 25% of I
rrm
; T
j
= 25˚C
and 150˚C
Fig.8. Typical junction capacitance C
d
at f = 1 MHz
;
T
j
= 25˚C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
1
10
100
BY329
-dIF/dt (A/us)
trr / ns
1000
100
10
1 A
IF = 10 A
Tj = 150 C
Tj = 25 C
10A
1A
Zth j-hs / (K/W)
10
1
0.1
0.01
10us
100us
1ms
10ms
0.1s
1s
10s
tp / s
P
t
p
t
D
1
100
100
10
1
10
1000
BY329
Cd / pF
VR / V
May 1995
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BY329X series
fast, soft-recovery
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
May 1995
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BY329X series
fast, soft-recovery
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1995
6
Rev 1.000