Philips Semiconductors
Product specification
Triacs
BT132 series D
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX. UNIT
triacs in a plastic envelope, intended
for
use
in
general
purpose
BT132-
500D
600D
bidirectional switching and phase
V
DRM
Repetitive peak off-state voltages
500
600
V
control applications. These devices
I
T(RMS)
RMS on-state current
1
1
A
are intended to be interfaced directly
I
TSM
Non-repetitive peak on-state current
16
16
A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 2
2
gate
3
main terminal 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V
DRM
Repetitive peak off-state
-
500
1
600
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
lead
≤
51 ˚C
-
1
A
I
TSM
Non-repetitive peak
full sine wave; T
j
= 25 ˚C prior to
on-state current
surge
t = 20 ms
-
16
A
t = 16.7 ms
-
17.6
A
I
2
t
I
2
t for fusing
t = 10 ms
-
1.28
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 1.5 A; I
G
= 0.2 A;
on-state current after
dI
G
/dt = 0.2 A/
µ
s
triggering
T2+ G+
-
50
A/
µ
s
T2+ G-
-
50
A/
µ
s
T2- G-
-
50
A/
µ
s
T2- G+
-
10
A/
µ
s
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
125
˚C
temperature
T1
T2
G
3 2 1
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
µ
s.
January 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT132 series D
logic level
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-lead
Thermal resistance
full cycle
-
-
60
K/W
junction to lead
half cycle
-
-
80
K/W
R
th j-a
Thermal resistance
pcb mounted;lead length = 4mm
-
150
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
-
2.0
5
mA
T2+ G-
-
2.5
5
mA
T2- G-
-
2.5
5
mA
T2- G+
-
5.0
10
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
1.6
10
mA
T2+ G-
-
4.5
15
mA
T2- G-
-
1.2
10
mA
T2- G+
-
2.2
15
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
1.2
10
mA
V
T
On-state voltage
I
T
= 5 A
-
1.4
1.70
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.7
1.5
V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
0.25
0.4
-
V
I
D
Off-state leakage current
V
D
= V
DRM(max)
; T
j
= 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
-
5
-
V/
µ
s
off-state voltage
exponential waveform; R
GK
= 1 k
Ω
t
gt
Gate controlled turn-on
I
TM
= 6 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
-
2
-
µ
s
time
dI
G
/dt = 5 A/
µ
s
January 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT132 series D
logic level
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus lead temperature T
lead
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
lead
≤
51˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
=180
120
90
60
30
BT132D
0
0
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
1
113
101
89
77
65
53
41
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
BT132D
51 C
Tmb / C
IT(RMS) / A
10us
100us
1ms
10ms
100ms
10
100
1000
BT132D
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
T2- G+ quadrant
dI /dt limit
T
0.01
0.1
1
10
0
0.5
1
1.5
24
2.5
3
BT132D
surge duration / s
IT(RMS) / A
10
100
1000
0
BT136
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
5
10
15
20
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
January 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT132 series D
logic level
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-lead
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT136D
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
BT136
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.27 V
Rs = 0.091 ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp / s
0.01
0.1
1
10
Zth j-sp (K/W)
100
t
p
P
t
D
unidirectional
bidirectional
BT134W
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IH(Tj)
IH(25C)
0
50
100
150
1
10
100
1000
Tj / C
dVD/dt (V/us)
January 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT132 series D
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.2 g
Fig.13. TO92 Variant; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
0.48
0.40
0.40
min
12.7 min
5.2 max
4.8 max
4.2 max
1.6
2.54
0.66
0.56
1
2
3
January 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Triacs
BT132 series D
logic level
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998
6
Rev 1.000