1
MRF10005
MOTOROLA RF DEVICE DATA
The RF Line
Microwave Power Transistor
. . . designed for CW and long pulsed common base amplifier applications,
such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high
overall duty cycles.
•
Guaranteed Performance @ 1.215 GHz, 28 Vdc
Output Power = 5.0 Watts CW
Minimum Gain = 8.5 dB, 10.3 dB (Typ)
•
RF Performance Curves given for 28 Vdc and 36 Vdc Operation
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Hermetically Sealed Industry Standard Package
•
Silicon Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Internal Input Matching for Broadband Operation
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
55
Vdc
Collector–Base Voltage
VCBO
55
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current — Continuous (1)
IC
1.25
mAdc
Total Device Dissipation @ TA = 25
°
C (1)
Derate above 25
°
C
PD
25
143
Watt
mW/
°
C
Storage Temperature Range
Tstg
– 65 to + 200
°
C
Junction Temperature
TJ
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
7.0
°
C/W
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF10005/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF10005
5.0 W, 960 – 1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 336E–02, STYLE 1
©
Motorola, Inc. 1994
REV 6
MRF10005
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
V(BR)CES
55
—
—
Vdc
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0)
V(BR)CBO
55
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0)
V(BR)EBO
3.5
—
—
Vdc
Collector Cutoff Current (VCB = 28 Vdc, IE = 0)
ICBO
—
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
20
—
100
—
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
7.0
10
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz)
GPB
8.5
10.3
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz)
η
45
55
—
%
Load Mismatch
(VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
C1, C2, C3 — 220 pF 100 mil Chip Capacitor
C4 — 0.1
µ
F
C5 — 47
µ
F/50 V Electrolytic
L1 — 3 turn #18 AWG, 1/8
″
ID, 0.18
″
Long
Z1 – Z10 — Microstrip, see details below
Board Material — 0.030
″
Glass Teflon,
2.0 oz. Copper,
ε
r = 2.55
RF
INPUT
RF
OUTPUT
Z10
C1
28 Vdc
+
–
D.U.T.
Z1
Z3
Z2
Z4
Z5
Z6
Z7
Z8
C3
C4
C5
+
L1
C2
Z9
0.050
0.25
0.20
0.050
0.40
0.90
0.37
0.70
0.13
0.080
0.50
0.20
0.660
0.275
0.16
0.25
0.375
0.57
0.40
0.25
0.08
2.365
1.385
1.125
0.650
0.30
0.000
0.00
0.20
0.30
0.40
0.70
1.45
1.91
1.96
2.365
3
MRF10005
MOTOROLA RF DEVICE DATA
P
o
, OUTPUT
POWER (W
A
TTS)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
Figure 4. Series Equivalent Input/Output Impedances
9
8
7
6
5
4
3
2
1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Pin, INPUT POWER (WATTS)
f = 960 MHz
1215 MHz
VCC = 28 Vdc
9
8
7
6
5
4
3
2
1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Pin, INPUT POWER (WATTS)
f = 960 MHz
VCC = 36 Vdc
P
o
, OUTPUT
POWER (W
A
TTS)
1215 MHz
f = 960 MHz
1025
ZOL*
Zin
Zo = 25
Ω
1090
1150
1215
f = 960 MHz
1025
1090
1150
1215
f
MHz
Zin
OHMS
ZOL*
OHMS
960
1025
1090
1150
1215
6.5 + j8.5
10.0 + j7.0
11.2 + j4.9
10.8 + j2.0
7.8 + j0.0
7.4 – j18.9
7.2 – j17.4
7.1 – j16.3
7.15 – j14.3
7.8 – j11.2
ZOL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage
and frequency.
Pout = 5 W, VCC = 28 V
MRF10005
4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 336E–02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
G
D
H
K
SEATING
PLANE
Q
2 PL
–B–
M
A
M
0.25 (0.010)
B
M
T
–A–
–T–
1
2
3
N
U
F
E
C
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.790
0.810
20.07
20.57
B
0.253
0.267
6.43
6.78
C
0.144
0.160
3.66
4.06
D
0.093
0.107
2.37
2.71
E
0.074
0.080
1.88
2.03
F
0.002
0.006
0.06
0.15
G
0.560 BSC
14.22 BSC
H
0.043
0.057
1.10
1.44
K
0.346
0.394
8.79
10.10
N
0.243
0.257
6.18
6.52
Q
0.125
0.135
3.18
3.42
U
0.117
0.128
2.98
3.25
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MRF10005/D
*MRF10005/D*
◊