1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•
Blocking Voltage to 800 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or
Four Modes (MAC212AFP Series)
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125
°
C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4FP, MAC212A4FP
MAC212-6FP, MAC212A6FP
MAC212-8FP, MAC212A8FP
MAC212-10FP, MAC212A10FP
VDRM
200
400
600
800
Volts
On-State RMS Current (TC = +85
°
C) Full Cycle Sine Wave 50 to 60 Hz(2)
IT(RMS)
12
Amps
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85
°
C)
preceded and followed by rated current
ITSM
100
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Peak Gate Power (TC = +85
°
C, Pulse Width = 10
µ
s)
PGM
20
Watts
Average Gate Power (TC = +85
°
C, t = 8.3 ms)
PG(AV)
0.35
Watt
Peak Gate Current (TC = +85
°
C, Pulse Width = 10
µ
s)
IGM
2
Amps
RMS Isolation Voltage (TA = 25
°
C, Relative Humidity
p
20%)
V(ISO)
1500
Volts
Operating Junction Temperature
TJ
–40 to +125
°
C
Storage Temperature Range
Tstg
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.1
°
C/W
Thermal Resistance, Case to Sink
R
θ
CS
2.2 (typ)
°
C/W
Thermal Resistance, Junction to Ambient
R
θ
JA
60
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Order this document
by MAC212FP/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
©
Motorola, Inc. 1995
MAC212FP
Series
MAC212AFP
Series
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
12 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
MAC212FP Series MAC212AFP Series
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction)
(VD = Rated VDRM, Gate Open)
TJ = 25
°
C
TJ = +125
°
C
IDRM
—
—
—
—
10
2
µ
A
mA
Peak On-State Voltage (Either Direction)
(ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
p
2%)
VTM
—
1.3
1.75
Volts
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms,
Minimum Gate Pulse Width = 2
µ
s)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
—
—
—
—
12
12
20
35
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms,
Minimum Gate Pulse Width = 2
µ
s)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 k
Ω
, TJ = +125
°
C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A ” SUFFIX ONLY
VGT
—
—
—
—
0.2
0.2
0.9
0.9
1.1
1.4
—
—
2
2
2
2.5
—
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
IH
—
6
50
mA
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1
µ
s, Pulse Width = 2
µ
s)
tgt
—
1.5
—
µ
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85
°
C)
dv/dt(c)
—
5
—
V/
µ
s
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85
°
C)
dv/dt
—
100
—
V/
µ
s
dc
30
°
60
°
90
°
0
4.0
8.0
12
16
20
24
28
14
12
10
6.0
8.0
4.0
2.0
0
IT(RMS), RMS ON-STATE CURRENT (AMP)
115
Figure 2. Power Dissipation
75
85
95
105
0
2.0
4.0
6.0
8.0
10
12
125
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
dc
180
°
90
°
α
= CONDUCTION ANGLE
α
α
Figure 1. Current Derating
60
°
α
α
α
= CONDUCTION ANGLE
T
, MAXIMUM
ALLOW
ABLE CASE
TEMPERA
TURE ( C)
C
°
P
,
A
VERAGE POWER DISSIP
A
TION (W
A
TT)
D(A
V)
TYPICAL CHARACTERISTICS
α
= 30
°
α
= 180
°
MAC212FP Series MAC212AFP Series
3
Motorola Thyristor Device Data
20
100
2
50
10
0.2
5
1
0.5
0.4 0.8 1.2 1.6 2
2.4 2.8 3.2 3.6
4
0.1
4.4
TJ = 125
°
C
TJ = 25
°
C
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Maximum On-State Characteristics
0
20
40
60
80
Figure 4. Maximum Nonrepetitive Surge Current
100
7
1
2
3
5
1.6
1.2
0.8
0.4
Figure 5. Typical Gate Trigger Voltage
2
CYCLE
NUMBER OF CYCLES
10
0
80
60
40
20
0
–20
–40
–60
TC, CASE TEMPERATURE (
°
C)
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
80
60
40
20
0
–20
–40
1.2
80
0
0.4
0.8
1.6
–60
–60
–40
–20
0
20
2.4
40
0
0.4
0.8
1.2
1.6
2
2.8
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
60
Figure 6. Typical Gate Trigger Current
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
Figure 7. Typical Holding Current
TC, CASE TEMPERATURE (
°
C)
TC, CASE TEMPERATURE (
°
C)
i , INST
ANT
ANEOUS ON-ST
A
TE CURRENT
(AMPS)
T
I , PEAK SURGE CURRENT
(AMP)
TSM
V , GA
TE
TRIGGER VOL
TAGE (NORMALIZED)
GT
I , HOLDING CURRENT
(NORMALIZED)
H
I , GA
TE
TRIGGER CURRENT
(NORMALIZED)
GT
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
TC = 70
°
C
f = 60 Hz
MAC212FP Series MAC212AFP Series
4
Motorola Thyristor Device Data
Figure 8. Thermal Response
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
10 k
200
5 k
2 k
1 k
500
0.1
100
50
20
5
2
1
0.02
0.5
1
0.5
0.2
0.1
0.05
0.2
0.01
Z
θ
JC(t) = r(t)
•
R
θ
JC
t, TIME (ms)
MAC212FP Series MAC212AFP Series
5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221C-02
1 2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
–Y–
–B–
–T–
Q
P
A
K
H
Z
G
L
F
D
3 PL
M
B
M
0.25 (0.010)
Y
E
N
S
J
R
C
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.680
0.700
17.28
17.78
B
0.388
0.408
9.86
10.36
C
0.175
0.195
4.45
4.95
D
0.025
0.040
0.64
1.01
E
0.340
0.355
8.64
9.01
F
0.140
0.150
3.56
3.81
G
0.100 BSC
2.54 BSC
H
0.110
0.155
2.80
3.93
J
0.018
0.028
0.46
0.71
K
0.500
0.550
12.70
13.97
L
0.045
0.070
1.15
1.77
N
0.049
–––
1.25
–––
P
0.270
0.290
6.86
7.36
Q
0.480
0.500
12.20
12.70
R
0.090
0.120
2.29
3.04
S
0.105
0.115
2.67
2.92
Z
0.070
0.090
1.78
2.28
MAC212FP Series MAC212AFP Series
6
Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MAC212FP/D
*MAC212FP/D*
◊