1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
One Watt High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–300
Vdc
Collector – Base Voltage
VCBO
–300
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
1.0
8.0
Watt
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125
°
C/W
Thermal Resistance, Junction to Case
R
q
JC
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–300
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100
µ
Adc, IE = 0)
V(BR)CBO
–300
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100
µ
Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
ICBO
—
–0.25
µ
Adc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–0.1
µ
Adc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSW92/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPSW92
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
Motorola Preferred Device
©
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPSW92
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
hFE
25
40
25
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VCE(sat)
—
–0.5
Vdc
Base–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VBE(sat)
—
–0.9
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
fT
50
—
MHz
Collector–Base Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
6.0
pF
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
–50
IC, COLLECTOR CURRENT (mA)
200
100
50
30
20
IB, BASE CURRENT (mA)
–0.5
–0.4
–0.3
–0.2
0
TJ = 125
°
C
h
–20
–0.5
–5.0
–0.1 –0.2
–1.0 –2.0
, COLLECT
OR–EMITTER VOL
TAGE (VOL
TS)
25
°
C
–1.0
–2.0
–10
–5.0
70
–10
–20 –30
–0.1
V
CE
, DC CURRENT
GAIN
FE
–3.0
–7.0
–30
–70 –100
–55
°
C
VCE = –10 V
–0.7
–0.6
TJ = 25
°
C
IC = –30 mA
IC = –10 mA
IC = –20 mA
MPSW92
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficients
Figure 5. Capacitance
Figure 6. Current–Gain — Bandwidth Product
Figure 7. Active Region Safe Operating Area
–3.0
–50
–1.0
IC, COLLECTOR CURRENT (mA)
–1.4
–1.2
–0.8
–0.6
–0.4
IC, COLLECTOR CURRENT (mA)
2.5
2.0
1.5
1.0
0
–0.5
–200
–0.2
VR, REVERSE VOLTAGE (VOLTS)
100
30
20
10
7.0
5.0
IC, COLLECTOR CURRENT (mA)
–1.0
50
30
20
10
–2.0
–1.0
–20
–200
–10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–200
–100
–50
–20
–10
–100
TJ = 25
°
C
V
, VOL
TAGE (VOL
TS)
C, CAP
ACIT
ANCE (pF)
, CURRENT–GAIN – BANDWIDTH PRODUCT
(MHz)
–2.0
–5.0
–70
–3.0
–10
–1.0
–2.0
–5.0 –7.0
, TEMPERA
TURE COEFFICIENTS (mV/ C)
–50
–500
–10
–7.0
–30
–20
–1.0
–20 –30
–50 –70 –100
0.5
R
V
50
70
–5.0
–2.0
–10
–20
–50 –100
70
100
–5.0
–10
–20
–50
–100
I
, COLLECT
OR CURRENT
(mA)
C
–300
TC = 25
°
C
–1 k
TA = 25
°
C
TJ = 25
°
C
VCE = –20 V
f = 20 MHz
–0.2
0
–2.5
–2.0
–1.5
–1.0
–0.5
–100
3.0
2.0
1.0
–3.0
–7.0
–30
–70
f T
q
°
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
5.0
–55
°
C TO 125
°
C
–55
°
C TO 25
°
C
25
°
C TO 125
°
C
IC/IB = 10
R
q
VC FOR VCE(sat)
R
q
VB FOR VBE
TJ = 25
°
C
Ceb
Ccb
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
DUTY CYCLE
≤
10%
1.0 s
1.0 ms
100
m
s
MPSW92
MPSW92
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–05
(TO–226AE)
ISSUE AD
R
A
P
L
F
B
K
G
H
C
V
N
N
X X
SEATING
PLANE
1
J
SECTION X–X
D
2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.44
5.21
B
0.290
0.310
7.37
7.87
C
0.125
0.165
3.18
4.19
D
0.018
0.022
0.46
0.56
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.018
0.024
0.46
0.61
K
0.500
–––
12.70
–––
L
0.250
–––
6.35
–––
N
0.080
0.105
2.04
2.66
P
–––
0.100
–––
2.54
R
0.135
–––
3.43
–––
V
0.135
–––
3.43
–––
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.
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MPSW92/D
*MPSW92/D*
◊