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Motorola Bipolar Power Transistor Device Data

NPN Silicon Power

Darlington Transistors

The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power

switching in inductive circuits. They are particularly suited for operation in applications

such as:

•

Small Engine Ignition

•

Switching Regulators

•

Inverters

•

Solenoid and Relay Drivers

•

Motor Controls

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

MJE5740

ÎÎÎÎ

MJE5741

ÎÎÎÎ

MJE5742

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

300

ÎÎÎÎ

350

ÎÎÎÎ

400

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEV

ÎÎÎÎ

600

ÎÎÎÎ

700

ÎÎÎÎ

800

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎÎÎ

2.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

640

ÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎ

– 65 to + 150

ÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.56

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes: 1/8

″

from Case for 5 Seconds

ÎÎÎÎÎ

ÎÎÎÎÎÎ

275

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

MJE5740

(IC = 50 mA, IB = 0)

MJE5741

MJE5742

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

300

350

400

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 6

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 7

(2) Pulse Test: Pulse Width = 300

s, Duty Cycle = 2%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE5740/D

Motorola, Inc. 1995

MJE5740

MJE5741

MJE5742

POWER DARLINGTON

TRANSISTORS

8 AMPERES

300, 350, 400 VOLTS

80 WATTS

*Motorola Preferred Device

≈

100

≈

CASE 221A–06

TO–220AB

REV 1

MJE5740 MJE5741 MJE5742

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS — continued

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)

(IC = 4 Adc, VCE = 5 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

200

ÎÎÎÎ

100

400

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc)

Collector–Emitter Saturation Voltage

(IC = 4 Adc, IB = 0.2 Adc, TC = 100

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)

Base–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc)

Base–Emitter Saturation Voltage

(IC = 4 Adc, IB = 0.2 Adc, TC = 100

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.5

3.5

2.4

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Diode Forward Voltage (2) (IF = 5 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Typical Resistive Load (Table 1)

ÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC(pk) = 6 A

IB1 = IB2 = 0.25 A, tp = 25

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

0.04

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC(pk) = 6 A

IB1 = IB2 = 0.25 A, tp = 25

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = IB2 = 0.25 A, tp = 25

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 1)

ÎÎÎÎÎÎÎÎ

Voltage Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC(pk) = 6 A, VCE(pk) = 250 Vdc

IB1 = 0.06 A, VBE(off) = 5 Vdc)

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC(pk) = 6 A, VCE(pk) = 250 Vdc

IB1 = 0.06 A, VBE(off) = 5 Vdc)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

(1) Pulse Test: Pulse Width 300

s, Duty Cycle = 2%.

(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the

(2)

Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

, BASE–EMITTER VOL

TAGE (VOL

TS)

trv

VCE

90% IB1

tsv

IC(pk)

VCE(pk)

90% VCE(pk)

90% IC

10% VCE(pk)

10%

IC(pk) 2% IC

tfi

tti

0.1

IC, COLLECTOR CURRENT (AMPS)

2000

, DC CURRENT

GAIN

VCE = 5 V

+ 25

1000

100

TC, CASE TEMPERATURE (

120

160

POWER DERA

TING F

ACT

OR (%)

SECOND BREAKDOWN DERATING

100

140

THERMAL DERATING

Figure 1. Power Derating

Figure 2. Inductive Switching Measurements

IC, COLLECTOR CURRENT (AMPS)

2.4

1.6

0.4

Figure 3. DC Current Gain

Figure 4. Base–Emitter Voltage

1.2

0.8

hFE = 20

0.2

0.5

TIME

150

– 55

2.2

1.4

1.8

0.6

+150

+ 25

– 55

TYPICAL CHARACTERISTICS