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Motorola Bipolar Power Transistor Device Data

Complementary Darlington

Silicon Power Transistors

. . . designed for use as general purpose amplifiers, low frequency switching and

motor control applications.

•

High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)

•

Collector–Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) – MJ11018, 17

VCEO(sus)

= 250 Vdc (Min) – MJ11022, 21

•

Low Collector–Emitter Saturation

VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A

VCE(sat)

= 1.8 V (Typ) @ IC = 10 A

•

Monolithic Construction

•

100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

MJ11018

MJ11017

ÎÎÎÎ

MJ11022

MJ11021

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

150

ÎÎÎÎ

250

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

150

ÎÎÎÎ

250

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current —

Continuous Peak

ÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎÎÎÎ

0.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate Above 25

ÎÎÎ

ÎÎÎÎÎÎÎ

175

1.16

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

– 65 to + 175

– 65 to + 200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.86

ÎÎÎ

C/W

(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle

10%.

150

Figure 1. Power Derating

TC, CASE TEMPERATURE (

100

125

200

, POWER DISSIP

TION (W

TTS)

100

150

175

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ11017/D

Motorola, Inc. 1995

MJ11017

MJ11021

MJ11018

MJ11022

30 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60 – 120 VOLTS

200 WATTS

*Motorola Preferred Device

PNP

NPN

CASE 1–07

TO–204AA

(TO–3)

MJ11017 MJ11021 MJ11018 MJ11022

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 0. 1 Adc, IB = 0)

MJ11017, MJ11018

MJ11021, MJ11022

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

150

250

ÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 75, IB = 0)

MJ11017, MJ11018

(VCE = 125, IB = 0)

MJ11021, MJ11022

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

0.5

5.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 15 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎ

400

100

ÎÎÎÎ

15,000

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 100 mA)

(IC = 15 Adc, IB = 150 mA)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

3.4

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

IC = 10 A, VCE = 5.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 15 Adc, IB = 150 mA)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

3.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain Bandwidth Product

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

[hfe]

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎÎ

Mhz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJ11018, MJ11022

MJ11017, MJ11021

ÎÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

400

600

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

Typical

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

NPN

ÎÎÎÎ

PNP

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

ÎÎÎÎÎ

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

ÎÎÎÎÎ

ÎÎÎÎ

1.2

ÎÎÎÎ

0.5

ÎÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

ÎÎÎÎÎ

ÎÎÎÎ

4.4

ÎÎÎÎ

2.7

ÎÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎ

10.0

ÎÎÎÎ

2.5

ÎÎÎÎ

(1) Pulsed Test: Pulse Width = 300

s, Duty Cycle

2%.

Figure 2. Switching Times Test Circuit

APPROX

+12 V

APPROX

– 8.0 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

VCC

100 V

SCOPE

TUT

+ 4.0 V

≈

10 K

≈

8.0

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse diode and voltage polarities.

MJ11017 MJ11021 MJ11018 MJ11022

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.1

r(t)

, EFFECTIVE

TRANSIENT

THERMAL

1.0

100

JC(t) = r(t) R

JC(t) = 0.86

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

SINGLE PULSE

RESIST

ANCE (NORMALIZED)

1000

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 3. Thermal Response

0.05

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02

0.03 0.05

0.2

0.3 0.5

2.0

3.0 5.0

200 300

500

0.1

0.02

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

200

3.0

100

Figure 4. Maximum Rated Forward Bias Safe

Operating Area (FBSOA)

0.3

0.2

0.5

7.0

150

0.1 ms

3.0

2.0

1.0

5.0

I C

, COLLECT

OR CURRENT

(AMPS)

TJ = 175

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITATION @ TC = 25

SINGLE PULSE

0.5 ms

1.0 ms

5.0 ms

MJ11017, 18

MJ11021, 22

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 175

C, TC is

variable dependIng on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

175

C. TJ(pk) may be calculated from the data in Figure 3.

At high case temperatures thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

100

140

260

180

220

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum RBSOA, Reverse Bias Safe

Operating Area

I C

, COLLECT

OR CURRENT

(AMPS)

L = 200

IC/IB1

≥

TC = 25

VBE(off) 0 – 5.0 V

RBE = 47

Ω

DUTY CYLE = 10%

MJ11017, 18

MJ11021, 22

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be hold to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 5 gives ROSOA characteristics.