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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Power

Plastic Transistors

. . . designed for low power audio amplifier and low–current, high–speed switching

applications.

•

High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253

•

High DC Current Gain @ IC = 200 mAdc

hFE = 40–200

hFE

= 40 – 120 — MJE243, MJE253

•

Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

•

High Current Gain Bandwidth Product —

fT = 40 MHz (Min) @ IC = 100 mAdc

•

Annular Construction for Low Leakages

ICBO = 100 nAdc (Max) @ Rated VCB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

100

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎ

7.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

ÎÎÎÎ

4.0

8.0

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎ

0.12

ÎÎÎÎ

Watts

W/ac

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate @ 25

ÎÎÎÎÎ

ÎÎÎÎ

1.5

0.012

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎ

– 65 to + 150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

ÎÎÎÎ

8.34

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

ÎÎÎÎ

83.4

ÎÎÎÎ

C/W

Figure 1. Power Derating

T, TEMPERATURE (

100

120

160

, POWER DISSIP

TION (W

TTS)

1.6

1.2

8.0

0.8

4.0

0.4

140

, POWER DISSIP

TION (W

TTS)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE243/D

Motorola, Inc. 1995

MJE243

MJE253

4 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

100 VOLTS

15 WATTS

*Motorola Preferred Device

NPN

PNP

CASE 77–08

TO–225AA

REV 7

MJE243 MJE253

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCE = 100 Vdc, IE = 0, TC = 125

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 200 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

180

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.3

0.6

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 200 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

Figure 2. Switching Time Test Circuit

+11 V

– 9.0 V

– 4 V

SCOPE

VCC

+ 30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25

TIME (ns)

500

300

200

100

0.01

0.03 0.05

0.5

0.2

0.1

0.3

Figure 3. Turn–On Time

NPN MJE243

PNP MJE253

0.02

MJE243 MJE253

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.02

0.05

1.0

2.0

5.0

100

200

0.1

0.5

0.2

1.0

0.2

0.1

0.05

r(t)

, TRANSIENT

THERMAL

RESIST

ANCE

JC(t) = r(t)

JC = 8.34

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

(NORMALIZED)

Figure 4. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

0.01

0.05

Figure 5. Active Region Safe Operating Area

500

5.0

7.0

5.0

3.0

2.0

1.0

100

TJ = 150

I C

, COLLECT

OR CURRENT

(AMP)

0.2

0.5

1.0

2.0

0.02

1.0 ms

100

5.0 ms

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

MJE243/MJE253

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

500

300

200

100

Figure 6. Turn–Off Time

TIME (ns)

0.01

0.03 0.05

0.5

0.2

0.02

0.1

0.3

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25

VR, REVERSE VOLTAGE (VOLTS)

100

200

Figure 7. Capacitance

7.0

5.0

3.0

1.0

C, CAP

ACIT

ANCE (pF)

2.0

TJ = 25

Cib

Cob

MJE243 (NPN)

MJE253 (PNP)

NPN MJE243

PNP MJE253

MJE243 MJE253

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMP)

, DC CURRENT

GAIN

Figure 8. DC Current Gain

Figure 9. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

200

500

0.06

0.1

0.4

4.0

0.04

100

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

5.0

1.0

2.0

0.6

TJ = 150

– 55

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.2

0.8

0.4

TJ = 25

, VOL

TAGE (VOL

TS)

NPN

MJE243

PNP

MJE253

100

200

2.0

, DC CURRENT

GAIN

TJ = 150

– 55

VCE = 1.0 V

VCE = 2.0 V

, VOL

TAGE (VOL

TS)

VCE(sat)

VBE @ VCE = 1.0 V

VB FOR VBE

TJ = 25

VBE(sat) @ IC/IB = 10

IC/IB = 10

VBE @ VCE = 1.0 V

, TEMPERA

TURE COEFFICIENTS (mV/

+ 2.5

+ 2.0

+ 1.5

+ 1.0

– 0.5

– 1.0

– 1.5

– 2.0

+ 0.5

– 2.5

*APPLIES FOR IC/IB

≤

hFE/3

C to 150

– 55

C to 25

C to 150

– 55

C to 25

, TEMPERA

TURE COEFFICIENTS (mV/

+ 2.5

+ 2.0

+ 1.5

+ 1.0

– 0.5

– 1.0

– 1.5

– 2.0

+ 0.5

– 2.5

*APPLIES FOR IC/IB

≤

hFE/3

C to 150

– 55

C to 25

C to 150

– 55

C to 25

VCE = 1.0 V

VCE = 2.0 V

7.0

300

0.06

0.1

0.4

4.0

0.2

1.0

2.0

0.6

0.04 0.06

0.1

0.4

4.0

0.2

1.0

2.0

0.6

0.06

0.1

0.4

4.0

0.04

0.2

1.0

2.0

0.6

0.04 0.06

0.1

0.4

4.0

0.2

1.0

2.0

0.6

0.04 0.06

0.1

0.4

4.0

0.2

1.0

2.0

0.6

1.0

0.6

0.2

1.4

1.2

0.8

0.4

1.0

0.6

0.2

3.0

5.0

7.0

5.0

IC/IB = 10

VCE(sat)

5.0

VBE(sat) @ IC/IB = 10

VC FOR VCE(sat)

VB FOR VBE

VC FOR VCE(sat)