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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Power

Plastic Transistors

. . . designed for low voltage, low–power, high–gain audio amplifier applications.

•

Collector–Emitter Sustaining Voltage —

VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

•

High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc

High DC Current Gain — hFE

= 45 (Min) @ IC = 2.0 Adc

High DC Current Gain — hFE

= 10 (Min) @ IC = 5.0 Adc

•

Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

VCE(sat)

= 0.75 Vdc (Max) @ IC = 2.0 Adc

•

High Current–Gain — Bandwidth Product —

fT = 65 MHz (Min) @ IC = 100 mAdc

•

Annular Construction for Low Leakage —

ICBO = 100 nAdc @ Rated VCB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

8.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

ÎÎÎÎÎÎ

5.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.12

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.5

0.012

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

– 65 to + 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

ÎÎÎÎÎÎ

8.34

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

ÎÎÎÎÎÎ

83.4

ÎÎÎ

C/W

Figure 1. Power Derating

T, TEMPERATURE (

100

120

160

, POWER DISSIP

TION (W

TTS)

1.6

1.2

8.0

0.8

4.0

0.4

140

, POWER DISSIP

TION (W

TTS)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE200/D

Motorola, Inc. 1995

MJE200

MJE210

5 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

25 VOLTS

15 WATTS

*Motorola Preferred Device

NPN

PNP

CASE 77–08

TO–225AA

REV 7

MJE200 MJE210

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 10 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

(VCB = 40 Vdc, IE = 0, TJ = 125

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

nAdc

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 8.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

nAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 2.0 Adc, VCE = 1.0 Vdc)

(IC = 5.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

180

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 2.0 Adc, IB = 200 mAdc)

(IC = 5.0 Adc, IB = 1.0 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.3

0.75

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 1.0 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1)

(IC = 2.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.6

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJE200

MJE210

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

120

ÎÎÎ

(1) Pulse Test: Pulse Width = 300

s, Duty Cycle

[

2.0%.

(2) fT =



hfe

•

ftest.

Figure 2. Switching Time Test Circuit

+11 V

– 9.0 V

– 4 V

SCOPE

VCC

+ 30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25

TIME (ns)

500

300

200

100

0.01

0.03 0.05

0.5

0.2

0.1

0.3

Figure 3. Turn–On Time

MJE200

MJE210

0.02

MJE200 MJE210

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.02

0.05

1.0

2.0

5.0

100

200

0.1

0.5

0.2

1.0

0.2

0.1

0.05

r(t)

, TRANSIENT

THERMAL

RESIST

ANCE

JC(t) = r(t)

JC = 8.34

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

(NORMALIZED)

Figure 4. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

7.0

0.7

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

Figure 5. Active Region Safe Operating Area

500

5.0

7.0

5.0

3.0

2.0

1.0

100

TJ = 150

I C

, COLLECT

OR CURRENT

(AMP)

0.2

0.5

1.0

2.0

3.0

0.3

1.0 ms

5.0 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

500

300

200

100

Figure 6. Turn–Off Time

TIME (ns)

0.01

0.03 0.05

0.5

0.2

0.02

0.1

0.3

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25

VR, REVERSE VOLTAGE (VOLTS)

100

200

Figure 7. Capacitance

6.0

4.0

2.0

1.0

0.4

C, CAP

ACIT

ANCE (pF)

0.6

TJ = 25

Cib

Cob

MJE200 (NPN)

MJE210 (PNP)

MJE200

MJE210

MJE200 MJE210

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMP)

, DC CURRENT

GAIN

Figure 8. DC Current Gain

Figure 9. “On” Voltage

IC, COLLECTOR CURRENT (AMP)

200

400

0.07 0.1

0.3

5.0

0.05

100

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

0.7 1.0

3.0

2.0

0.5

TJ = 150

– 55

2.0

0.05

IC, COLLECTOR CURRENT (AMP)

5.0

1.6

1.2

0.8

0.4

3.0

2.0

0.07

0.2

0.1

0.5

0.3

1.0

0.7

TJ = 25

, VOL

TAGE (VOL

TS)

NPN

MJE200

PNP

MJE210

0.07 0.1

0.3

5.0

0.05

0.2

0.7

1.0

3.0

2.0

0.5

200

400

100

, DC CURRENT

GAIN

TJ = 150

– 55

VCE = 1.0 V

VCE = 2.0 V

, VOL

TAGE (VOL

TS)

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V

VC for VCE(sat)

VB for VBE

2.0

0.05

1.6

1.2

0.8

0.4

3.0

2.0

0.07

0.2

0.1

0.5

0.3

1.0

0.7

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V

, TEMPERA

TURE COEFFICIENTS (mV/

+ 2.5

+ 2.0

+ 1.5

+ 1.0

– 0.5

– 1.0

– 1.5

– 2.0

+ 0.5

– 2.5

0.07 0.1

0.3

5.0

0.05

0.2

0.7

1.0

3.0

2.0

0.5

*APPLIES FOR IC/IB

≤

hFE/3

C to 150

– 55

C to 25

C to 150

– 55

C to 25

, TEMPERA

TURE COEFFICIENTS (mV/

+ 2.5

+ 2.0

+ 1.5

+ 1.0

– 0.5

– 1.0

– 1.5

– 2.0

+ 0.5

– 2.5

0.07 0.1

0.3

5.0

0.05

0.2

0.7

1.0

3.0

2.0

0.5

VC for VCE(sat)

VB for VBE

*APPLIES FOR IC/IB

≤

hFE/3

C to 150

– 55

C to 25