1
Motorola Thyristor Device Data
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed for industrial and consumer applications such as temperature, light and
speed control; process and remote controls; warning systems; capacitive discharge
circuits and MPU interface.
•
Center Gate Geometry for Uniform Current Density
•
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Low Trigger Currents, 200
µ
A Maximum for Direct Driving from Integrated Circuits
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking
Voltage(1)
(TJ = –40 to 110
°
C)
(1/2 Sine Wave, RGK = 1 k
Ω
)
MCR310-2
MCR310-3
MCR310-4
MCR310-6
MCR310-8
MCR310-10
VDRM
or
VRRM
50
100
200
400
600
800
Volts
On-State RMS Current (TC = 75
°
C)
IT(RMS)
10
Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to 110
°
C)
ITSM
100
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Peak Gate Voltage (t
p
10
µ
s)
VGM
±
5
Volts
Peak Gate Current (t
p
10
µ
s)
IGM
1
Amp
Peak Gate Power (t
p
10
µ
s)
PGM
5
Watts
Average Gate Power
PG(AV)
0.75
Watt
Operating Junction Temperature Range
TJ
–40 to +110
°
C
Storage Temperature Range
Tstg
–40 to +150
°
C
Mounting Torque
–
8
in.-lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.2
°
C/W
Thermal Resistance, Junction to Ambient
R
θ
JA
60
°
C/W
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or
negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by MCR310/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
©
Motorola, Inc. 1995
MCR310
Series
CASE 221A-04
(TO-220AB)
STYLE 3
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
C
G
A
K
A
G
MCR310 Series
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C, RGK = 1 k
Ω
unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward Blocking Current(1)
TC = 110
°
C
(TJ = 110
°
C, VD = Rated VDRM)
TC = 25
°
C
IDRM
—
—
—
—
500
10
µ
A
µ
A
Peak Reverse Blocking Current(1)
TC = 110
°
C
(TJ = 110
°
C, VR = Rated VRRM)
TC = 25
°
C
IRRM
—
—
—
—
500
10
µ
A
µ
A
On-State Voltage
(ITM = 20 A Peak, Pulse Width
p
1 ms, Duty Cycle
p
2%)
VTM
—
1.7
2.2
Volts
Gate Trigger Current, Continuous dc(2)
(VD = 12 V, RL = 100
Ω
)
IGT
—
30
200
µ
A
Gate Trigger Voltage, Continuous dc
(VD = 12 V, RL = 100
Ω
)
(VD = Rated VDRM, RL = 10 k
Ω
, TJ = 110
°
C)
VGT
—
0.1
0.5
—
1.5
—
Volts
Holding Current
(VD = 12 V, ITM = 100 mA)
IH
—
—
6
mA
Critical Rate of Rise of Forward Blocking Voltage
(VD = Rated VDRM, TJ = 110
°
C, Exponential Waveform)
dv/dt
—
10
—
V/
µ
s
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 20 A, IG = 2 mA)
tgt
—
1
—
µ
s
1. Ratings apply for negative gate voltage or RGK = 1 k
Ω
. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
2. Does not include RGK current.
Figure 1. Average Current Derating
Figure 2. On-State Power Dissipation
Figure 3. Normalized Gate Current
Figure 4. Gate Voltage
0.3
120
0.5
1
2
–40
–20
0
20
40
60
80
90
100
3
140
VD = 12 Vdc
8
TJ, JUNCTION TEMPERATURE (
°
C)
0
2
4
110
6
70
80
90
100
10
120
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
α
= 30
°
180
°
dc
α
= CONDUCTION ANGLE
0.6
α
0.1
0.2
0.3
0.4
0.5
40
0.7
–60
–40
–20
0
100
20
60
80
120
VD = 12 Vdc
0
2
4
6
8
16
TJ, JUNCTION TEMPERATURE (
°
C)
0
4
8
12
20
α
α
= CONDUCTION ANGLE
10
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
90
°
180
°
dc
T
, MAXIMUM CASE
TEMPERA
TURE ( C)
C
°
NORMALIZED GA
TE CURRENT
P
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
A
V
V , GA
TE
TRIGGER VOL
TAGE (VOL
TS)
GT
60
°
α
= 30
°
60
°
90
°
MCR310 Series
3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-04
(TO–220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.014
0.022
0.36
0.55
K
0.500
0.562
12.70
14.27
L
0.045
0.055
1.15
1.39
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
–––
1.15
–––
Z
–––
0.080
–––
2.04
A
K
L
V
G
D
N
Z
H
Q
F
B
1
2
3
4
–T–
SEATING
PLANE
S
R
J
U
T
C
MCR310 Series
4
Motorola Thyristor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MCR310/D
*MCR310/D*
◊