background image
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
3–1
REV 1
©
Motorola, Inc. 1995
10/95
Octal 3-State Non-Inverting
Buffer/Line Driver/
Line Receiver
High–Performance Silicon–Gate CMOS
The MC54/74HC541A is identical in pinout to the LS541. The device
inputs are compatible with Standard CMOS outputs. External pullup
resistors make them compatible with LSTTL outputs.
The HC541A is an octal non–inverting buffer/line driver/line receiver
designed to be used with 3–state memory address drivers, clock drivers, and
other bus–oriented systems. This device features inputs and outputs on
opposite sides of the package and two ANDed active–low output enables.
The HC541A is similar in function to the HC540A, which has inverting
outputs.
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2 to 6V
Low Input Current: 1
µ
A
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 134 FETs or 33.5 Equivalent Gates
18
Y1
2
A1
17
Y2
3
A2
16
Y3
4
A3
15
Y4
5
A4
14
Y5
6
A5
13
Y6
7
A6
12
Y7
8
A7
11
Y8
9
A8
OE1
OE2
1
19
Output
Enables
Data
Inputs
Non–Inverting
Outputs
PIN 20 = VCC
PIN 10 = GND
LOGIC DIAGRAM
Pinout: 20–Lead Packages (Top View)
19
20
18
17
16
15
14
2
1
3
4
5
6
7
VCC
13
8
12
9
11
10
OE2
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
OE1
A1
A2
A3
A4
A5
A6
A7
A8
GND
L
L
H
X
L
L
X
H
L
H
X
X
MC54/74HC541A
FUNCTION TABLE
Inputs
Output Y
OE1
OE2
A
L
H
Z
Z
Z = High Impedance
X = Don’t Care
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ORDERING INFORMATION
MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXADW
Ceramic
Plastic
SOIC
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
1
20
1
20
1
20
background image
MC54/74HC541A
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
3–2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 0.5 to + 7.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Voltage (Referenced to GND)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 0.5 to VCC + 0.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Output Voltage (Referenced to GND)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 0.5 to VCC + 0.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Current, per Pin
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
±
20
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Output Current, per Pin
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
±
35
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Current, VCC and GND Pins
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
±
75
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
750
500
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mW
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Temperature Range
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 65 to + 150
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP or SOIC Package
Ceramic DIP)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
260
300
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/
_
C from 65
_
to 125
_
C
Ceramic DIP: – 10 mW/
_
C from 100
_
to 125
_
C
SOIC Package: – 7 mW/
_
C from 65
_
to 125
_
C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
6.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vin, Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
VCC
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating Temperature Range, All Package Types
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
– 55
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
+ 125
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
tr, tf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Input Rise/Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0
0
0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1000
500
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
DC CHARACTERISTICS
(Voltages Referenced to GND)
VCC
V
Guaranteed Limit
Symbol
Parameter
Condition
VCC
V
–55 to 25
°
C
85
°
C
125
°
C
Unit
VIH
Minimum High–Level Input Voltage
Vout = 0.1V
|Iout|
20
µ
A
2.0
3.0
4.5
6.0
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
V
VIL
Maximum Low–Level Input Voltage
Vout = VCC – 0.1V
|Iout|
20
µ
A
2.0
3.0
4.5
6.0
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
V
VOH
Minimum High–Level Output
Voltage
Vin = VIL
|Iout|
20
µ
A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIL
|Iout|
3.6mA
|Iout|
6.0mA
|Iout|
7.8mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
VOL
Maximum Low–Level Output
Voltage
Vin = VIH
|Iout|
20
µ
A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH
|Iout|
3.6mA
|Iout|
6.0mA
|Iout|
7.8mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v
(Vin or Vout)
v
VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
background image
MC54/74HC541A
High–Speed CMOS Logic Data
DL129 — Rev 6
3–3
MOTOROLA
DC CHARACTERISTICS
(Voltages Referenced to GND)
Guaranteed Limit
VCC
V
Symbol
Unit
125
°
C
85
°
C
–55 to 25
°
C
VCC
V
Condition
Parameter
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
±
0.1
±
1.0
±
1.0
µ
A
IOZ
Maximum Three–State Leakage
Current
Output in High Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
±
0.5
±
5.0
±
10.0
µ
A
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0
µ
A
6.0
4
40
160
µ
A
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS
(CL = 50 pF, Input tr = tf = 6 ns)
VCC
V
Guaranteed Limit
Symbol
Parameter
VCC
V
–55 to 25
°
C
85
°
C
125
°
C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
2.0
3.0
4.5
6.0
80
30
18
15
100
40
23
20
120
55
28
25
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
110
45
25
21
140
60
31
26
165
75
38
31
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
110
45
25
21
140
60
31
26
165
75
38
31
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
3.0
4.5
6.0
60
22
12
10
75
28
15
13
90
34
18
15
ns
Cin
Maximum Input Capacitance
10
10
10
pF
Cout
Maximum Three–State Output Capacitance (Output in High
Impedance State)
15
15
15
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
CPD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25
°
C, VCC = 5.0 V, VEE = 0 V
pF
CPD
Power Dissipation Capacitance (Per Buffer)*
35
pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
Figure 1.
VCC
GND
INPUT A
OUTPUT Y
tPLH
OE1 or OE2
50%
VCC
GND
OUTPUT Y
tPZL
OUTPUT Y
tPZH
HIGH
IMPEDANCE
VOL
VOH
HIGH
IMPEDANCE
10%
90%
tPLZ
tPHZ
50%
50%
tPHL
90%
50%
10%
tr
tTLH
tf
tTHL
Figure 2.
SWITCHING WAVEFORMS
90%
50%
10%
50%
background image
MC54/74HC541A
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
3–4
CL*
*Includes all probe and jig capacitance
TEST
POINT
DEVICE
UNDER
TEST
OUTPUT
TEST CIRCUITS
Figure 3.
Figure 4.
CL*
*Includes all probe and jig capacitance
TEST
POINT
DEVICE
UNDER
TEST
OUTPUT
1k
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ and tPZH.
PIN DESCRIPTIONS
INPUTS
A1, A2, A3, A4, A5, A6, A7, A8 (PINS 2, 3, 4, 5, 6, 7, 8,
9) — Data input pins. Data on these pins appear in non–in-
verted form on the corresponding Y outputs, when the out-
puts are enabled.
CONTROLS
OE1, OE2 (PINS 1, 19) — Output enables (active–low).
When a low voltage is applied to both of these pins, the out-
puts are enabled and the device functions as an non–invert-
ing buffer. When a high voltage is applied to either input, the
outputs assume the high impedance state.
OUTPUTS
Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8 (PINS 18, 17, 16, 15, 14,
13, 12, 11) — Device outputs. Depending upon the state of
the output enable pins, these outputs are either non–invert-
ing outputs or high–impedance outputs.
VCC
To 7 Other
Buffers
LOGIC DETAIL
One of Eight
Buffers
INPUT A
OE1
OE2
OUTPUT Y
background image
MC54/74HC541A
High–Speed CMOS Logic Data
DL129 — Rev 6
3–5
MOTOROLA
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE
POSITION AT SEATING PLANE, AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
23.88
25.15
0.940
0.990
B
6.60
7.49
0.260
0.295
C
3.81
5.08
0.150
0.200
D
0.38
0.56
0.015
0.022
F
1.40
1.65
0.055
0.065
G
2.54 BSC
0.100 BSC
H
0.51
1.27
0.020
0.050
J
0.20
0.30
0.008
0.012
K
3.18
4.06
0.125
0.160
L
7.62 BSC
0.300 BSC
M
0
15
0
15
N
0.25
1.02
0.010
0.040
_
_
_
_
A
20
1
10
11
B
F
C
SEATING
PLANE
D
H
G
K
N
J
M
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
M
L
J
20 PL
M
B
M
0.25 (0.010)
T
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
25.66
27.17
1.010
1.070
B
6.10
6.60
0.240
0.260
C
3.81
4.57
0.150
0.180
D
0.39
0.55
0.015
0.022
G
2.54 BSC
0.100 BSC
J
0.21
0.38
0.008
0.015
K
2.80
3.55
0.110
0.140
L
7.62 BSC
0.300 BSC
M
0
15
0
15
N
0.51
1.01
0.020
0.040
_
_
_
_
E
1.27
1.77
0.050
0.070
1
11
10
20
–A–
SEATING
PLANE