background image
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
1
REV 7
©
Motorola, Inc. 1995
10/95
8-Input Data Selector/
Multiplexer With Data and
Address Latches and
3-State Outputs
High–Performance Silicon–Gate CMOS
The MC54/74HC354 is identical in pinout to the LS354. The device
inputs are compatible with Standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
The HC354 selects one of eight latched binary Data Inputs, as deter-
mined by the Address Inputs. The information at the Data Inputs is stored
in the transparent 8–bit Data Latch when the Data–Latch Enable pin is
held high. The Address information may be stored in the transparent
Address Latch, which is enabled by the active–high Address–Enable pin.
The device outputs are placed in high–impedance states when Output
Enable 1 is high, Output Enable 2 is high, or Output Enable 3 is low.
The HC354 has a clocked Data Latch that is not transparent.
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2 to 6V
Low Input Current: 1
µ
A
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 326 FETs or 81.5 Equivalent Gates
LOGIC DIAGRAM
D0
8
D1
7
D2
6
D3
5
D4
4
D5
3
D6
2
D7
1
8–BIT
DATA
LATCH
(TRANS–
PARENT)
8–BIT
MULTI–
PLEXER
DATA
INPUTS
3–STATE
OUTPUT
CONTROL
Y
19
Y
18
3–STATE
DATA
OUTPUTS
DATA–LATCH
ENABLE
9
A0
14
A1
13
A2
12
ADDRESS
INPUTS
ADDRESS–LATCH
ENABLE
11
OE1
15
OE2
16
OE3
17
OUTPUT
ENABLES
ADDRESS
LATCH
(TRANS–
PARENT)
PIN 20 = VCC
PIN 10 = GND
MC54/74HC354
20
1
19
2
18
3
17
4
VCC
D7
16
5
15
6
14
7
13
8
12
9
11
10
Y
D6
Y
D5
OE3
D4
OE2
D3
OE1
D2
A0
D1
A1
D0
A2
Data–Latch
Enable
Address–Latch
Enable
GND
Pinout: 20–Lead Package (Top View)
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXDW
Ceramic
Plastic
SOIC
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
1
20
1
20
1
20
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MC54/74HC354
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS*
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 0.5 to + 7.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Voltage (Referenced to GND)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 1.5 to VCC + 1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Output Voltage (Referenced to GND)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 0.5 to VCC + 0.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Current, per Pin
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
±
20
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Output Current, per Pin
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
±
35
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Current, VCC and GND Pins
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
±
75
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
750
500
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mW
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Temperature Range
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
– 65 to + 150
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP or SOIC Package
Ceramic DIP
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
260
300
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/
_
C from 65
_
to 125
_
C
Ceramic DIP: – 10 mW/
_
C from 100
_
to 125
_
C
SOIC Package: – 7 mW/
_
C from 65
_
to 125
_
C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
6.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vin, Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
VCC
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
TA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating Temperature Range, All Package Types
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
– 55
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
+ 125
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
tr, tf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Input Rise/Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0
0
0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1000
500
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
DC CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
V
Guaranteed Limit
Unit
Symbol
Parameter
Condition
VCC
V
–55 to 25
°
C
85
°
C
125
°
C
Unit
VIH
Minimum High–Level Input Voltage
Vout = 0.1V or VCC –0.1V
|Iout|
20
µ
A
2.0
4.5
6.0
1.50
3.15
4.20
1.50
3.15
4.20
1.50
3.15
4.20
V
VIL
Maximum Low–Level Input Voltage
Vout = 0.1V or VCC – 0.1V
|Iout|
20
µ
A
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
VOH
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20
µ
A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin =VIH or VIL
|Iout|
6.0mA
|Iout|
7.8mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20
µ
A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL
|Iout|
6.0mA
|Iout|
7.8mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
±
0.1
±
1.0
±
1.0
µ
A
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v
(Vin or Vout)
v
VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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MC54/74HC354
High–Speed CMOS Logic Data
DL129 — Rev 6
3
MOTOROLA
DC CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
Unit
Guaranteed Limit
VCC
V
Condition
Parameter
Symbol
Unit
125
°
C
85
°
C
–55 to 25
°
C
VCC
V
Condition
Parameter
IOZ
Maximum Three–State Leakage
Current
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
±
0.5
±
5.0
±
10.0
µ
A
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0
µ
A
6.0
8
80
160
µ
A
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS
(CL = 50 pF, Input tr = tf = 6 ns)
Symbol
Parameter
VCC
V
Guaranteed Limit
Unit
Symbol
Parameter
VCC
V
–55 to 25
°
C
85
°
C
125
°
C
Unit
tPLH,
tPHL
Maximum Propagation Delay, D0–D7 to Y or Y
(Figures 2 and 6)
2.0
4.5
6.0
210
42
36
265
53
45
315
63
54
ns
tPLH,
tPHL
Maximum Propagation Delay, Data–Latch Enable to Y or Y
(Figures 3 and 6)
2.0
4.5
6.0
260
52
44
325
65
55
390
78
66
ns
tPLH,
tPHL
Maximum Propagation Delay, A0–A2 to Y or Y
(Figures 2 and 6)
2.0
4.5
6.0
270
54
46
340
68
58
405
81
69
ns
tPLH,
tPHL
Maximum Propagation Delay, Address–Latch Enable to Y or Y
(Figures 3 and 6)
2.0
4.5
6.0
270
54
46
340
68
58
405
81
69
ns
tPLZ,
tPHZ
Maximum Propagation Delay, OE1–OE3 to Y or Y
(Figures 4 and 7)
2.0
4.5
6.0
160
32
27
200
40
34
240
48
41
ns
tPZL,
tPZH
Maximum Propagation Delay, OE1–OE3 to Y or Y
(Figures 4 and 7)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 6)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
Cin
Maximum Input Capacitance
10
10
10
pF
Cout
Maximum Three–State Output Capacitance (Output in High Impedance
State)
15
15
15
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
CPD
Power Dissipation Capacitance (Per Package)*
Typical @ 25
°
C, VCC = 5.0 V
pF
CPD
Power Dissipation Capacitance (Per Package)*
48
pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
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MC54/74HC354
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
4
PIN DESCRIPTIONS
D0–D7 (Pins 8–1) DATA INPUTS
These eight data bits are stored in a transparent latch when
the Data–Latch Enable pin is active (high). Once enabled,
changing inputs will not change the contents of the latch.
A0, A1, A2 (Pins 14,13,12) ADDRESS INPUTS
Selects which data bit stored in the Data Latch is routed to
the outputs Y and Y.
DATA–LATCH ENABLE (Pin 9)
The latch is transparent to D0–D7 when enable is inactive
(low). The Data–Latch contents are unaffected when enable
is held active (high).
ADDRESS–LATCH ENABLE (Pin 11)
The latch is transparent to A0, A1 and A2 when enable is
inactive (low). The Address–Latch contents are unaffected
when enable is held active (high).
OE1, OE2, OE3 (Pins 15,16,17) OUTPUT ENABLES
Any of the output enable pins inactive (OE1=High or
OE2=High or OE3=Low) causes the outputs (Y and Y) to be
in high–impedance states.
Y, Y (Pins 19,18)
These 3–state outputs (when not 3–stated) represent the
data bit in the Data Latch selected by the Address Latch.
TIMING REQUIREMENTS
(Input tr = tf = 6 ns)
VCC
V
Guaranteed Limit
Symbol
Parameter
VCC
V
–55 to 25
°
C
85
°
C
125
°
C
Unit
tsu
Minimum Setup Time, D0–D7 to Data–Latch Enable
(Figure 5)
2.0
4.5
6.0
50
10
9
65
13
11
75
15
13
ns
tsu
Minimum Setup Time, A0–A2 to Address–Latch Enable
(Figure 5)
2.0
4.5
6.0
50
10
9
65
13
11
75
15
13
ns
th
Minimum Hold Time, Data–Latch Enable to D0–D7
(Figure 5)
2.0
4.5
6.0
5
5
5
5
5
5
5
5
5
ns
th
Minimum Hold Time, Address–Latch Enable to A0–A2
(Figure 5)
2.0
4.5
6.0
5
5
5
5
5
5
5
5
5
ns
tw
Minimum Pulse Width, Data–Latch Enable
(Figure 3)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
tw
Minimum Pulse Width, Address–Latch Enable
(Figure 3)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
tr, tf
Maximum Input Rise and Fall Times
(Figure 1)
2.0
4.5
6.0
1000
500
400
1000
500
400
1000
500
400
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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MC54/74HC354
High–Speed CMOS Logic Data
DL129 — Rev 6
5
MOTOROLA
FUNCTION TABLE
Address Latch Contents #
Inputs
Outputs
A2
A1
A0
Data–Latch
Enable
OE1
OE2
OE3
Y
Y
Description
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
X
H
X
X
X
L
Z
Z
Z
Z
Z
Z
Outputs in High–Impedance States
L
L
L
L
H
H
H
H
L
L
H
H
L
L
H
H
L
H
L
H
L
H
L
H
L
L
L
H
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D4
D5
D6
D7
Data–Latch is Transparent
L
L
L
L
H
H
H
H
L
L
H
H
L
L
H
H</