/home/techdatasheets.com/WWW/datasheets_html/171981/datasheet-MC33348D-1

MC33348

SEMICONDUCTOR

TECHNICAL DATA

LITHIUM BATTERY

PROTECTION CIRCUIT

FOR

ONE CELL

SMART BATTERY PACKS

D SUFFIX

PLASTIC PACKAGE

CASE 751

(SO–8)

(Top View)

Cell Voltage

Test

Ground

Charge Pump

Output

PIN CONNECTIONS

Order this document by MC33348/D

Discharge Gate

Drive Output

VCC

Charge Gate

Drive Output

Charge Gate Drive

Common/Discharge

Current Limit

MOTOROLA ANALOG IC DEVICE DATA

Advance Information

Lithium Battery Protection

Circuit for One Cell

Battery Packs

The MC33348 is a monolithic lithium battery protection circuit that is

designed to enhance the useful operating life of a one cell rechargeable

battery pack. Cell protection features consist of internally trimmed charge

and discharge voltage limits, discharge current limit detection with a

delayed shutdown, and a virtually zero current sleepmode state when the

cell is discharged. An additional feature includes an on–chip charge pump

for reduced MOSFET losses while charging or discharging a low cell

voltage battery pack. This protection circuit requires a minimum number of

external components and is targeted for inclusion within the battery pack.

This MC33348 is available in standard SOIC 8 lead surface mount

package.

•

Internally Trimmed Charge and Discharge Voltage Limits

•

Discharge Current Limit Detection with Delayed Shutdown

•

Virtually Zero Current Sleepmode State when Cells are Discharged

•

Charge Pump for Reduced Losses with a Low Cell Voltage Battery Pack

•

Dedicated for One Cell Applications

•

Minimum Components for Inclusion within the Battery Pack

•

Available in a Low Profile Surface Mount Package

Ordering Information shown on following page.

Typical One Cell Smart Battery Pack

This device contains 1170 active transistors.

VCC

Charge Pump

Output

Charge

Gate Drive

Output

Discharge

Gate Drive

Output

5 Charge

Gate Drive

Common/

Discharge

Current Limit

Ground

Test

MC33348

Cell

Voltage

This document contains information on a new product. Specifications and information herein

are subject to change without notice.

Motorola, Inc. 1997

Rev 1

MC33348

MOTOROLA ANALOG IC DEVICE DATA

ORDERING INFORMATION

Device

Charge

Overvoltage

Threshold (V)

Charge

Overvoltage

Hysteresis (mV)

Discharge

Undervoltage

Threshold (V)

Discharge

Current Limit

Threshold (mV)

Operating

Temperature Range

Package

MC33348D–1

4 20

300

2 25

400

SO 8

MC33348D–2

4.20

300

2.25

200

SO 8

MC33348D–3

4 25

300

2 28

400

TA = –25

to +85

SO–8

MC33348D–4

4.25

300

2.28

200

TA = –25

to +85

SO–8

MC33348D–5

4 35

2 30

400

MC33348D–6

4.35

2.30

200

NOTE:

Additional threshold limit options can be made available. Consult factory for information.

MAXIMUM RATINGS

Ratings

Symbol

Value

Unit

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Input Voltage (Measured with Respect to Ground, Pin 3)

ÁÁÁÁ

VIR

ÁÁÁÁÁ

ÁÁ

Cell Voltage (Pin 1)

7.5

Test (Pin 2)

7.5

Discharge Gate Drive Output (Pin 4)

Charge Gate Drive Common/Discharge Current Limit (Pin 5)

Charge Gate Drive Output (Pin 6)

VCC (Pin 7)

7.5

Charge Pump Output (Pin 8)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Thermal Resistance, Junction–to–Air

ÁÁÁÁ

ÁÁÁÁÁ

ÁÁ

C/W

D Suffix, SO–8 Plastic Package, Case 751

178

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Operating Junction Temperature (Note 1)

ÁÁÁÁ

ÁÁÁÁÁ

–40 to +150

ÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Storage Temperature

ÁÁÁÁ

Tstg

ÁÁÁÁÁ

–55 to +150

ÁÁ

NOTES: 1. Tested ambient temperature range for the MC33348:

Tlow = –25

Thigh = +85

2. ESD data available upon request.

MC33348

MOTOROLA ANALOG IC DEVICE DATA

ELECTRICAL CHARACTERISTICS

(VCC = 4.0 V, TA = 25

C, for min/max values TA is the operating junction temperature range

that applies (Note 1), unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

VOLTAGE SENSING

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Cell Charging Cutoff (Pin 1 to Pin 3)

ÁÁÁÁ

ÁÁÁÁÁ

ÁÁÁÁ

ÁÁÁ

Overvoltage Threshold, VCell Increasing, TA = 25

Vth(OV)

–1 Suffix

4.158

4.20

4.242

–2 Suffix

4.158

4.20

4.242

–3 Suffix

4.208

4.25

4.293

–4 Suffix

4.208

4.25

4.293

–5 Suffix

4.306

4.35

4.394

–6 Suffix

4.306

4.35

4.394

Overvoltage Hysteresis VCell Decreasing

–1 Suffix

–

300

–

–2 Suffix

–

300

–

–3 Suffix

–

300

–

–4 Suffix

–

300

–

–5 Suffix

–

300

–

–6 Suffix

–

300

–

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Cell Discharging Cutoff (Pin 1 to Pin 3, TA = 25

ÁÁÁÁ

ÁÁÁÁÁ

ÁÁÁÁ

ÁÁÁ

Undervoltage Threshold, VCell Decreasing

Vth(UV)

–1 Suffix

2.205

2.25

2.295

–2 Suffix

2.205

2.25

2.295

–3 Suffix

2.234

2.28

2.326

–4 Suffix

2.234

2.28

2.326

–5 Suffix

2.254

2.30

2.346

–6 Suffix

2.254

2.30

2.346

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Input Bias Current During Cell Voltage Sample (Pin 1)

ÁÁÁÁ

IIB

ÁÁÁÁ

–

ÁÁÁÁÁ

ÁÁÁÁ

–

ÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Cell Voltage Sampling Rate

ÁÁÁÁ

t(smpl)

ÁÁÁÁ

–

ÁÁÁÁÁ

1.0

ÁÁÁÁ

–

ÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CURRENT SENSING

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Discharge Current Limit (Pin 3 to Pin 5, TA = 25

ÁÁÁÁ

ÁÁÁÁÁ

ÁÁÁÁ

ÁÁÁ

Threshold Voltage

Vth(dschg)

–1 Suffix

360

400

440

–2 Suffix

180

200

220

–3 Suffix

360

400

440

–4 Suffix

180

200

220

–5 Suffix

360

400

440

–6 Suffix

180

200

220

Delay

Idly(dschg)

1.0

2.3

4.0

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CHARGE PUMP

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Output Voltage (Pin 8, RL

≥

1010, TA = 25

ÁÁÁÁ

8.0

ÁÁÁÁÁ

10.2

ÁÁÁÁ

ÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

TOTAL DEVICE

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Average Cell Current (TA = 25

C, Battery Pack Unloaded and without

Current Limit Fault)

ÁÁÁÁ

ÁÁÁ

ÁÁÁÁ

ICC

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁÁÁÁ

ÁÁÁ

ÁÁÁÁÁ

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁÁ

ÁÁ

ÁÁÁ

Operating (VCC = 4.0 V)

–

Sleepmode (VCC = 2.0 V)

–

2.0

–

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Minimum Operating Cell Voltage for Logic and Gate Drivers

ÁÁÁÁ

VCC

ÁÁÁÁ

–

ÁÁÁÁÁ

1.5

ÁÁÁÁ

–

ÁÁÁ

NOTE:

1. Tested ambient temperature range for the MC33348:

Tlow = –25

Thigh = +85

MC33348

MOTOROLA ANALOG IC DEVICE DATA

Battery Pack Sleepmode Range

10–4

10–3

100

1.0

2.0

3.0

5.0

10–2

10–1

6.0

4.0

5.0

1.0

2.0

3.0

8.0

4.0

0.4

–0.8

–0.4

0.8

–16

–8.0

8.0

4.0

102

6.0

1.0

0.8

0.6

0.2

0.4

8.0

4.0

100

–20

–40

9.0

8.0

100

–20

–40

100

–20

–40

101

1.2

–1.2

Typical Threshold Change

Maximum Threshold

Charge Limits

VCC = 4.0 V

VCC = 4.15 V

VCC = 3.25 V

VCC = 2.35 V

CO = 10 nF

TA = 25

CO = 10 nF

Pin 2 = Gnd

≥

1010

Ω

TA = 25

CO = 10 nF

≥

1010

Ω

VCC = 4.15 V

In Regulation

VCC = 2.35 V

Out of Regulation

Battery Pack Operating Range

1 – Battery pack unloaded without

discharge current limit fault.

2 – Battery pack loaded without

discharge current limit fault.

3 – Battery pack loaded or unloaded

with discharge current limit fault.

Figure 1. Charge and Discharge

Threshold Voltage Change versus Temperature

Figure 2. Discharge Current Limit

Threshold Voltage Change versus Temperature

Figure 3. Gate Drive Output Voltage

versus Load Current

Figure 4. Gate Drive Output Voltage

versus Supply Voltage

Figure 5. Charge Pump Output Voltage

versus Temperature

Figure 6. Supply Current

versus Supply Voltage

TA, AMBIENT TEMPERATURE (

, GA

TE DRIVE OUTPUT

VOL

TAGE (V)

IL, OUTPUT LOAD CURRENT (

VCC, SUPPLY VOLTAGE (V)

I CC

, SUPPL

CURRENT

(

VCC, SUPPLY VOLTAGE (V)

TA, AMBIENT TEMPERATURE (

, GA

TE DRIVE OUTPUT

VOL

TAGE (V)

, CHARGE PUMP

OUTPUT

VOL

TAGE (V)

∆

th(dschg)

, CURRENT

LIMIT

THRESHOLD

∆

th(OV & UV)

, THRESHOLD

VOL

TAGE CHANGE (%)

VOL

TAGE CHANGE (%)

TA = 25

MC33348

MOTOROLA ANALOG IC DEVICE DATA

PROTECTION CIRCUIT OPERATING MODE TABLE

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁ

Outputs

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

MOSFET Switches

ÁÁÁÁ

Function

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

Input Conditions

Cell Status

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Circuit Operation

Battery Pack Status

Charge

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Discharge

Charge

Pump

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CELL CHARGING/DISCHARGING

ÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

Storage or Nominal Operation:

No current or voltage faults

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Both Charge MOSFET Q1 and Discharge MOSFET Q2 are on.

The battery pack is available for charging or discharging.

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁ

Active

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CELL CHARGING FAULT/RESET

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

Charge Voltage Limit Fault:

VPin 1

≥

Vth(OV) for 1.0 s

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Charge MOSFET Q1 is latched off and the cell is disconnected

from the charging source. An internal current source pull–up is

applied to divider resistors R1 and R2 creating a hysteresis

voltage of VH. The battery pack is available for discharging.

Discharge current limit protection is disabled.

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

On to Off

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Active

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

Charge Voltage Limit Reset:

VPin 1 < (Vth(OV) – VH)

for 1.0 s

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Charge MOSFET Q1 will turn on when the voltage across the cell

falls sufficiently to overcome hysteresis voltage VH. This can be

accomplished by applying a load to the battery pack. Discharge

current limit protection is enabled.

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Off to On

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Active

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CELL DISCHARGING FAULT/RESET

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

Discharge Current Limit Fault:

VPin 5

≥

(VPin 3 + Vth(dschg))

for 3.0 ms and

VPin 1 < (Vth(OV) – VH)

for 1.0 ms

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Discharge MOSFET Q2 is latched off and the cell is

disconnected from the load. Q2 will remain in the off state as long

as VPin 5 exceeds VPin 3 by

≈

Vth(dschg). The battery pack is

available for charging.

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

On to Off

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Active

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

Discharge Current Limit Reset:

VPin 5 – VPin 3 < Vth(dschg)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

The Sense Enable circuit will reset and turn on discharge

MOSFET Q2 when VPin 3 no longer exceeds VPin 5 by

≈

Vth(dschg). This can be accomplished by either disconnecting

the load from the battery pack, or by connecting the battery pack

to the charger.

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Off to On

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Active

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

Discharge Voltage Limit Fault:

VPin 1

≤

Vth(UV) for three

consecutive 1.0 s samples

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Discharge MOSFET Q2 is latched off, the cells are disconnected

from the load, and the protection circuit enters a low current

sleepmode state. The battery pack is available for charging.

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

On to Off

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Disabled

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

Discharge Voltage Limit Reset:

VPin 3 > (VPin 5 + 0.6 V)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

The Sense Enable circuit will reset and turn on discharge

MOSFET Q2 when VPin 3 exceeds VPin 5 by 0.6 V. This can be

accomplished by connecting the battery pack to the charger.

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Off to On

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Active

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

FAULTY CELL

ÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁ

Discharge Voltage Limit Fault:

VPin 1

≤

1.5 V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

This condition can happen if the cell is defective (<1.5 V). The

protection circuit logic will not function and the battery pack

cannot be charged.

ÁÁÁÁ

ÁÁ

ÁÁÁÁ

Disabled

ÁÁÁÁ

ÁÁ