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MSM6690

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MSM6690

ROM Interface IC

GENERAL DESCRIPTION

The MSM6690 can drive three devices of 131,072 x 8-bit EPROM or Mask ROM.

The MSM6690 contains a built-in internal address generator circuit and one external clock input

that enables contiued serial read operations. The internal address counter is automatically

incremented by one each read operation. The external serial address input allows 1,024 words

to be addressed in the X-direction, and 1,024 words in the Y-direction.

ROM is selected through CS1, CS2 and CS3 pins.

FEATURES

• Capable of driving three devices of 1 Mbit EPROM

• Capable of driving three devices of 1 Mbit Mask ROM

• Supply voltage

: Single 5 V

• Package options

: 42-pin plastic DIP (DIP42-P-600) (Product name: MSM6690RS)

44-pin plastic QFP (QFP44-P-910-2K) (Product name: MSM6690GS-2K)

Available combinations

MSM6388/6588

MSM6688/6788/6789A

MSM6389/6587/6586

(MSM6684/6685)

MSM6690

ROM

Note: When driving the MSM6690 with the MSM6388 or the MSM6588, a serial register

(MSM6389, MSM6688 or MSM6586) is required.

In the case of the MSM6688, MSM6788 and MSM6789A, a playback system can be

constructed without a serial register (MSM6684 or MSM6685).

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MSM6690

PIN CONFIGURATION (TOP VIEW)

DOUT

TEST01

TEST02

TEST

TAS

RDCK

A16

A15

A12

SADX

SADY

SASX

SASY

CS3

CS2

CS1

A14

A13

A11

A10

CE2

CE3

GND

42-Pin Plastic DIP

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MSM6690

RDCK

A16

A15

A12

CS3

CS2

CS1

A14

A13

A11

A10

CE2

CE3

TAS

TEST

TEST02

TEST01

DOUT

SADX

SADY

SASX

SASY

GND

44-Pin Plastic QFP

PIN CONFIGURATION (TOP VIEW) (Continued)

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MSM6690

PIN DESCRIPTIONS

Symbol

Type

Description

—

Power Supply

GND

—

Ground

SADX

(SERIAL ADDRESS) Starting X address.

1024 words are addressed, and 1024 address data can be input as serial data

of 10 bit (AX0 to AX9) via SADX pin.

SADY

(SERIAL ADDRESS) Starting Y address.

1024 words are addressed, and 1024 address data can be input as serial data

of 10 bit (AY0 to AY9) via SADY pin.

SASX

(SERIAL ADDRESS STROBE) Clock to load X address's serial address data to

internal register.

SASY

(SERIAL ADDRESS STROBE) Clock to load Y address's serial address data to

internal register.

TAS

(TRANSFER ADDRESS STROBE) Serial address data loaded in address

X address and Y address data are loaded at fall of TAS pin.

RDCK

(READ CLOCK) Clock to read data in data register.

Internal operation starts on falling edge of RDCK, and data in the data register

is output via DOUT pin. And internal address counter is automatically

incremented by one due to the falling of RDCK.

DOUT

(DATA OUT) In case CS1, CS2 and CS3 are all at "H" level, or RDCK is at "H"

level data output pin is always at high impedance state.

When "H" level data or "L" level data is read out, output pin is set to "H" level or

"L" level and its read data is kept until RDCK turns to "H" level.

CS1

CS2

CS3

(CHIP SELECT) Three ROMS selection.

CS1

CS2

CS3

CE2

CE3

—

When CS1, CS2 and CS3 are all set to "H" level, all input/output pins become

disabled. By use of these pins, three ROM data output pins can be connected

in parallel.

CE2

CE3

(CHIP ENABLE) ROM enable.

Connect it to ROM's CE.

A0 - A16

(ADDRESS OUT) ROM address.

TEST

IC test.

Input "L" level data.

D0 - D7

(DATA IN) ROM data.

TEST01

TEST02

IC test.

Set to open.

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MSM6690

ABSOLUTE MAXIMUM RATINGS

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Range

Unit

Power Supply Voltage

Operating Temperature

+3.0 to +6.0

–40 to +85

°C

(GND = 0 V)

ELECTRICAL CHARACTERISTICS

DC Characteristics

Typical operation is with V

= 5.0 V, Ta = 25

Parameter

Symbol

Condition

Rating

Unit

Power Supply Voltage

Input Voltage

Output Voltage

Input Current

Output Current

Storage Temperature

STG

Typical:

Ta = 25°C

GND = 0 V

—

–0.3 to +7.0

–0.3 to V

+0.3

–0.3 to V

+0.3

–10 to +10

–20 to +20

–55 to +150

°C

Parameter

Symbol

Condition

"H" level Input Voltage

"L" level Input Voltage

"H" level Input Current

"L" level Input Current

3-state Output Leak Current

(with open drain output)

OZH

OZL

= V

CMOS level input

= GND

Unit

Max.

+0.3

1.5

—

Typ.*

—

0.01

–0.01

0.01

–0.01

Min.

3.5

–0.3

—

–10

—

–10

"H" level Output Voltage

= –5.0 mA

4.2

2.4

"L" level Output Voltage

= 5.0 mA

0.5

0.24

GND

Supply Current at Standby

Output open V

= V

100

0.1

—

= GND

Supply Current at Operating

—

CMOS level input

= V

= 5.0 V ± 10%, GND = 0 V, Ta = –40 to +85°C)

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MSM6690

APPLICATION CIRCUITS

SAD

SAS

TAS

RWCK

DI/O

CS1

CS2

CS3

CS4

GND

TEST

GND

MSM6690

A16

GND

SADX

SADY

SASX

SASY

TAS

RDCK

DOUT

CS1

CS2

CS3

27C1000

MSM6388

MSM6588

TEST01

TEST02

CE2

CE3

PGM

SAD

AU/D

TEST TEST TEST TEST V

GND

TEST

MSM6389

SAS

TAS

RWCK

DOUT

DIN

Example of application circuit where MSM6388/6588,a 1-Mbit serial register,

and three 1-Mbit EPROMs are connected.

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MSM6690

APPLICATION CIRCUITS (Continued)

SADX

SAS

TAS

RWCK

DROM

CS1

CS2

CS3

CS4

GND

TEST

GND

MSM6690

A16

GND

SADX

SADY

SASX

SASY

TAS

RDCK

DOUT

CS1

CS2

CS3

27C1000

MSM6688

MSM6789A

TEST01

TEST02

CE2

CE3

PGM

SADY

A16

GND

27C1000

PGM

Example of application circuit where MSM6688/6789A

and four 1-Mbit EPROMs are connected.