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¡ Semiconductor
MSM514256C/CL
DESCRIPTION
The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM514256C/CL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM514256C/CL is available in a 20-pin plastic DIP, 26/20-pin plastic
SOJ, or 20-pin plastic ZIP. The MSM514256CL (the low-power version) is specially designed for
lower-power applications.
FEATURES
• 262,144-word ¥ 4-bit configuration
• Single 5 V power supply,
±
10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version)
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Package options:
20-pin 300 mil plastic DIP
(DIP20-P-300-2.54-W1) (Product : MSM514256C/CL-xxRS)
26/20-pin 300 mil plastic SOJ
(SOJ26/20-P-300-1.27) (Product : MSM514256C/CL-xxJS)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514256C/CL-xxZS)
xx indicates speed rank.
PRODUCT FAMILY
¡ Semiconductor
MSM514256C/CL
262,144-Word
¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM514256C/CL-50
50 ns
100 ns
120 ns
446 mW
385 mW
5.5 mW/
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
MSM514256C/CL-60
t
RAC
60 ns
26 ns
t
AA
30 ns
14 ns
t
CAC
15 ns
MSM514256C/CL-45
45 ns
90 ns
468 mW
24 ns
14 ns
Operating (Max.)
1.1 mW (L-version)
130 ns
330 mW
MSM514256C/CL-70
70 ns
35 ns
20 ns
14 ns
t
OEA
15 ns
14 ns
20 ns
E2G0010-17-41
This version: Jan. 1998
Previous version: May 1997
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¡ Semiconductor
MSM514256C/CL
PIN CONFIGURATION (TOP VIEW)
20-Pin Plastic DIP
26/20-Pin Plastic SOJ
20-Pin Plastic ZIP
Pin Name
Function
A0 - A8
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ4
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5 V)
V
SS
Ground (0 V)
3
5
7
11
13
15
17
19
DQ3
V
SS
DQ2
A0
A2
V
CC
A5
A7
1
OE
9
RAS
4
6
8
12
14
16
18
20
DQ4
DQ1
WE
A1
A3
A4
A6
A8
2
CAS
NO LEAD
3
4
5
9
10
11
12
13
WE
RAS
NC
A0
A1
A2
A3
V
CC
24
23
22
18
17
16
15
14
DQ3
CAS
OE
A8
A7
A6
A5
A4
2
DQ2
25 DQ4
1
DQ1
26 V
SS

1
DQ1
10
V
CC
2
DQ2
3
WE
4
RAS
5
NC
6
A0
7
A1
8
A2
9
A3
20 V
SS
11 A4
19 DQ4
18 DQ3
17
CAS
16
OE
15 A8
14 A7
13 A6
12 A5
NC
No Connection
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¡ Semiconductor
MSM514256C/CL
BLOCK DIAGRAM
Timing
Generator
RAS
CAS
Timing
Generator
Internal
Address
Counter
Row
Address
Buffers
A0 - A8
V
CC
V
SS
On Chip
V
BB
Generator
Row
De-
coders
Word
Drivers
Memory
Cells
Refresh
Control Clock
Sense
Amplifiers
Column
Decoders
Write
Clock
Generator
I/O
Selector
Output
Buffers
WE
OE
4
DQ1 - DQ4
4
4
4
4
4
Input
Buffers
4
9
9
9
Column
Address
Buffers
9
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¡ Semiconductor
MSM514256C/CL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Recommended Operating Conditions
Capacitance
*: Ta = 25
°
C
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
T
Symbol
I
OS
P
D
*
T
opr
T
stg
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Rating
mA
W
°C
°C
Parameter
V
Unit
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
5.0
0
—
—
Typ.
Parameter
4.5
0
2.4
–1.0
Min.
5.5
0
6.5
0.8
Max.
(Ta = 0°C to 70°C)
V
Unit
V
V
V
Input Capacitance (A0 - A8)
Input Capacitance (
RAS, CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
C
IN1
Symbol
C
IN2
C
I/O
5
5
6
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
—
—
—
Typ.
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¡ Semiconductor
MSM514256C/CL
DC Characteristics
I
OH
= –5.0 mA
Output High Voltage
I
OL
= 4.2 mA
Output Low Voltage
0 V £ V
I
£ 6.5 V;
All other pins not
Input Leakage Current
under test = 0 V
DQ disable
Output Leakage Current
0 V £ V
O
£ 5.5 V
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(
RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
DQ = enable
Average Power
CAS before RAS
Supply Current
(
CAS before RAS Refresh)
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
PC
= Min.
(Fast Page Mode)
t
RC
= 125 ms,
Average Power
CAS before RAS,
Supply Current
t
RAS
£ 1 ms
(Battery Backup)
≥ V
CC
–0.2 V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
RAS cycling,
Parameter
Symbol
Condition
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
I
CC10
MSM514256
C/CL-45
MSM514256
C/CL-50
MSM514256
C/CL-60
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
85
1
200
85
5
85
80
300
2
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
80
1
200
80
5
80
75
300
2
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
70
1
200
70
5
70
65
300
2
Unit
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Note
1, 2
1, 5
1, 2
1
1, 2
1, 3
1, 2,
4, 5
1
MSM514256
C/CL-70
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
60
1
200
60
5
60
55
300
2
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while RAS = V
IL
.
3. The address can be changed once or less while CAS = V
IH
.
4. V
CC
– 0.2 V £ V
IH
£ 6.5 V, –1.0 V £ V
IL
£ 0.2 V.
5. L-version.
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¡ Semiconductor
MSM514256C/CL
AC Characteristics (1/2)
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from
RAS
Access Time from
CAS
Access Time from Column Address
Access Time from
OE
Output Low Impedance Time from
CAS
Transition Time
Refresh Period
Refresh Period (L-version)
RAS Precharge Time
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
CAS Precharge Time (Fast Page Mode)
CAS Pulse Width
RAS Pulse Width
CAS Hold Time
CAS to RAS Precharge Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
Column Address Hold Time from
RAS
Column Address to
RAS Lead Time
Access Time from
CAS Precharge
OE to Data Output Buffer Turn-off Delay Time
RAS Hold Time referenced to OE
RAS Hold Time from CAS Precharge
CAS to Data Output Buffer Turn-off Delay Time
t
RC
t
RWC
t
PC
t
PRWC
t
RAC
t
CAC
t
AA
t
OEA
t
CLZ
t
OFF
t
T
t
REF
t
REF
t
RP
t
RAS
t
RASP
t
RSH
t
CP
t
CAS
t
CSH
t
CRP
t
RCD
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
t
RAL
t
CPA
t
OEZ
t
ROH
t
RHCP
Parameter
MSM514256
C/CL-45
MSM514256
C/CL-50
MSM514256
C/CL-60
MSM514256
C/CL-70
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3, 4, 5
Symbol
Min.
90
140
34
75
—
—
—
—
0
0
3
—
—
35
45
45
14
10
14
45
5
17
12
0
7
0
12
35
24
—
0
10
Max.
—
—
—
—
45
14
24
28
—
10
50
8
64
—
10,000
100,000
—
—
10,000
—
—
31
21
—
—
—
—
—
—
14
10
—
Min.
100
150
36
77
—
—
—
—
0
0
3
—
—
40
50
50
14
10
14
50
5
18
13
0
8
0
13
40
26
—
0
10
Max.
—
—
—
—
50
14
26
30
—
10
50
8
64
—
10,000
100,000
—
—
10,000
—
—
36
24
—
—
—
—
—
—
14
10
—
Min.
120
170
40
90
—
—
—
—
0
0
3
—
—
50
60
60
15
10
15
60
5
20
15
0
10
0
15
50
30
—
0
10
Max.
—
—
—
—
60
15
30
35
—
10
50
8
64
—
10,000
100,000
—
—
10,000
—
—
45
30
—
—
—
—
—
—
15
10
—
Min.
130
185
45
95
—
—
—
—
0
0
3
—
—
50
70
70
20
10
20
70
5
20
15
0
10
0
15
55
35
—
0
10
Max.
—
—
—
—
70
20
35
40
—
10
50
8
64
—
10,000
100,000
—
—
10,000
—
—
50
35
—
—
—
—
—
—
20
10
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
6, 7, 8
6, 7
6, 8
6
6
9
3
7
8
6
9
28
—
30
—
35
—
40
—
ns
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¡ Semiconductor
MSM514256C/CL
AC Characteristics (2/2)
Read Command Set-up Time
t
RCS
Read Command Hold Time
t
RCH
Read Command Hold Time referenced to
RAS
Write Command Set-up Time
Write Command Hold Time
Write Command Hold Time from
RAS
Write Command Pulse Width
Write Command to
RAS Lead Time
Write Command to
CAS Lead Time
Data-in Set-up Time
t
RRH
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
Data-in Hold Time
t
DH
Data-in Hold Time from
RAS
t
DHR
CAS to WE Delay Time
t
CWD
Column Address to
WE Delay Time
t
AWD
RAS to WE Delay Time
CAS Active Delay Time from RAS Precharge
RAS to CAS Set-up Time (CAS before RAS)
RAS to CAS Hold Time (CAS before RAS)
t
RWD
t
RPC
t
CSR
t
CHR
OE Command Hold Time
t
OEH
OE to Data-in Delay Time
t
OED
CAS Precharge WE Delay Time
t
CPWD
Parameter
MSM514256
C/CL-45
MSM514256
C/CL-50
MSM514256
C/CL-60
MSM514256
C/CL-70
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3, 4, 5
Symbol
Min.
0
0
0
0
10
12
35
14
0
12
35
12
48
70
50
0
10
25
36
10
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min.
0
0
0
0
10
13
40
14
0
13
40
13
52
75
53
0
10
25
38
10