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¡ Semiconductor
MSM5118160D/DSL
DESCRIPTION
The MSM5118160D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM5118160D/DSL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
double-layer metal CMOS process. The MSM5118160D/DSL is available in a 42-pin plastic SOJ or
50/44-pin plastic TSOP. The MSM5118160DSL (the self-refresh version) is specially designed for
lower-power applications.
FEATURES
• 1,048,576-word ¥ 16-bit configuration
• Single 5 V power supply,
±
10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (SL version)
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• CAS before RAS self-refresh capability (SL version)
• Package options:
42-pin 400 mil plastic SOJ
(SOJ42-P-400-1.27)
(Product : MSM5118160D/DSL-xxJS)
50/44-pin 400 mil plastic TSOP (TSOPII50/44-P-400-0.80-K)(Product : MSM5118160D/DSL-xxTS-K)
(TSOPII50/44-P-400-0.80-L) (Product : MSM5118160D/DSL-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
¡ Semiconductor
MSM5118160D/DSL
1,048,576-Word
¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5118160D/DSL-70
70 ns
130 ns
90 ns
633 mW
743 mW
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
MSM5118160D/DSL-50
t
RAC
50 ns
35 ns
t
AA
25 ns
20 ns
t
CAC
13 ns
20 ns
t
OEA
13 ns
MSM5118160D/DSL-60
60 ns
110 ns
688 mW
30 ns
15 ns
15 ns
Operating (Max.)
5.5 mW/
1.1 mW (SL version)
E2G0152-29-41
This version: Apr. 1999
Previous version: Oct. 1998
2/16
¡ Semiconductor
MSM5118160D/DSL
PIN CONFIGURATION (TOP VIEW)
A9
A8
A7
A6
A5
A4
NC
NC
A0
A1
A2
A3
A9
A8
A7
A6
A5
A4
NC
NC
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
21
22
30
31
32
33
34
35
36
37
38
39
40
41
42
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
NC
WE
V
CC
V
SS
UCAS
LCAS
NC
DQ9
DQ10
DQ11
DQ12
V
SS
DQ13
DQ14
DQ15
DQ16
V
SS
14
29
RAS
OE
15
28
NC
A9
16
27
NC
A8
17
26
A0
A7
18
25
A1
A6
19
24
A2
A5
20
23
A3
A4
1
2
3
4
5
6
7
8
9
10
11
25
26
40
41
42
43
44
45
46
47
48
49
50
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
V
CC
V
SS
NC
DQ9
DQ10
DQ11
DQ12
V
SS
DQ13
DQ14
DQ15
DQ16
V
SS
15
36
NC
NC
16
35
NC
LCAS
17
34
WE
UCAS
18
33
RAS
OE
19
32
20
31
21
30
22
29
23
28
24
27
1
2
3
4
5
6
7
8
9
10
11
25
26
40
41
42
43
44
45
46
47
48
49
50
V
CC
DQ1
DQ2
DQ3
DQ4
V
CC
DQ5
DQ6
DQ7
DQ8
NC
V
CC
V
SS
NC
DQ9
DQ10
DQ11
DQ12
V
SS
DQ13
DQ14
DQ15
DQ16
V
SS
15
36
NC
NC
16
35
NC
LCAS
17
34
WE
UCAS
18
33
RAS
OE
19
32
20
31
21
30
22
29
23
28
24
27
42-Pin Plastic SOJ
50/44-Pin Plastic TSOP
(K Type)
50/44-Pin Plastic TSOP
(L Type)
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
Pin Name
Function
A0 - A9
Address Input
RAS
Row Address Strobe
LCAS
Lower Byte Column Address Strobe
DQ1 - DQ16
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5 V)
NC
No Connection
UCAS
Upper Byte Column Address Strobe
V
SS
Ground (0 V)
3/16
¡ Semiconductor
MSM5118160D/DSL
BLOCK DIAGRAM
Timing
Generator
Refresh
Control Clock
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Row
Deco-
ders
Word
Drivers
Memory
Cells
Sense Amplifiers
Column Decoders
I/O
Controller
I/O
Controller
I/O
Selector
Input
Buffers
Output
Buffers
Output
Buffers
Input
Buffers
On Chip
V
BB
Generator
V
CC
DQ1 - DQ8
DQ9 - DQ16
UCAS
WE
A0
-
A9
10
16
8
8
16
8
8
8
8
8
8
10
OE
RAS
LCAS
On Chip
IV
CC
Generator
V
SS
10
10
FUNCTION TABLE
Function Mode
RAS
H
L
Input Pin
LCAS
*
H
L
UCAS
H
WE
H
H
H
L
L
OE
L
L
L
H
L
L
L
L
L
H
L
L
H
L
L
H
L
*
*
*
*
*
H
Lower Byte Read
Upper Byte Read
Word Read
Refresh
Standby
Lower Byte Write
DQ Pin
DQ1 - DQ8
High-Z
High-Z
D
OUT
D
IN
DQ9 - DQ16
High-Z
High-Z
High-Z
D
OUT
Don't Care
High-Z
D
OUT
D
OUT
Don't Care
D
IN
Upper Byte Write
L
L
L
L
H
D
IN
D
IN
Word Write
H
L
L
L
H
High-Z
High-Z
—
H
*: "H" or "L"
4/16
¡ Semiconductor
MSM5118160D/DSL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
IN
, V
OUT
Symbol
I
OS
P
D
*
T
opr
T
stg
–0.5 to V
CC
+ 0.5
50
1
0 to 70
–55 to 150
Rating
mA
W
°C
°C
Parameter
V
Unit
Voltage on V
CC
Supply Relative to V
SS
V
CC
–0.5 to 7
V
Recommended Operating Conditions
*: Ta = 25
°
C
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
5.0
0
—
—
Typ.
Parameter
4.5
0
2.4
–0.5
*2
Min.
5.5
0
V
CC
+ 0.5
*1
0.8
Max.
(Ta = 0°C to 70°C)
V
Unit
V
V
V
Notes : *1. The input voltage is V
CC
+ 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
– 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
SS
is applied).
Capacitance
Input Capacitance (A0 - A9)
Input Capacitance
Output Capacitance (DQ1 - DQ16)
C
IN1
Symbol
C
IN2
C
I/O
5
7
7
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
—
—
—
Typ.
(
RAS, LCAS, UCAS, WE, OE)
5/16
¡ Semiconductor
MSM5118160D/DSL
DC Characteristics
Parameter
Symbol
Condition
MSM5118160
D/DSL-50
MSM5118160
D/DSL-60
MSM5118160
D/DSL-70
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
I
OH
= –5.0 mA
Output High Voltage
I
OL
= 4.2 mA
Output Low Voltage
0 V £ V
I
£ 6.5 V;
All other pins not
Input Leakage Current
under test = 0 V
DQ disable
Output Leakage Current
0 V £ V
O
£ V
CC
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(
RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
DQ = enable
Average Power
CAS before RAS
Supply Current
(
CAS before RAS Refresh)
Average Power
RAS £ 0.2 V,
Supply Current
CAS £ 0.2 V
(
CAS before RAS
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CCS
≥ V
CC
–0.2 V
Min.
Max.
Min.
Max.
Min.
Max.
Unit Note
RAS cycling,
2.4
0
–10
–10
—
—
—
—
—
—
—
V
CC
0.4
10
10
135
2
1
135
135
300
5
2.4
0
–10
–10
—
—
—
—
—
—
—
V
CC
0.4
10
10
125
2
1
125
125
300
5
2.4
0
–10
–10
—
—
—
—
—
—
—
V
CC
0.4
10
10
115
2
1
115
115
300
5
—
200
—
200
—
200
V
V
mA
mA
mA
mA
mA
mA
mA
mA
1, 2
1, 2
1, 2
1, 5
1
1
mA
1, 5
t
RC
= 125 ms,
Average Power
CAS before RAS,
Supply Current
t
RAS
£ 1 ms
(Battery Backup)
I
CC10
—
300
—
300
—
300
mA
1, 4,
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
PC
= Min.
(Fast Page Mode)
I
CC7
—
135
—
125
—
115
mA
1, 3
5
Self-Refresh)
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while RAS = V
IL
.
3. The address can be changed once or less while CAS = V
IH
.
4. V
CC
– 0.2 V £ V
IH
£ V
CC
+ 0.5 V, –0.5 V £ V
IL
£ 0.2 V.
5. SL version.
6/16
¡ Semiconductor
MSM5118160D/DSL
AC Characteristics (1/2)
Parameter
MSM5118160
D/DSL-60
MSM5118160
D/DSL-70
MSM5118160
D/DSL-50
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from
RAS
Access Time from
CAS
Access Time from Column Address
Access Time from
CAS Precharge
CAS to Data Output Buffer Turn-off Delay Time
Transition Time
RAS Precharge Time
RAS Pulse Width
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
CAS Pulse Width
CAS Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
Column Address to
RAS Lead Time
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time referenced to
RAS
Access Time from
OE
OE to Data Output Buffer Turn-off Delay Time
Refresh Period
RAS Hold Time referenced to OE
Unit
Min.
Max.
Min.
Max.
RAS Hold Time from CAS Precharge
Symbol
t
RC
t
RWC
t
PC
t
PRWC
t
RAC
t
CAC
t
AA
t
CPA
t
OFF
t
T
t
RP
t
RAS
t
RASP
t
RSH
t
CAS
t
CSH
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
OEA
t
OEZ
t
REF
t
ROH
t
RHCP
Note
Min.
Max.
Output Low Impedance Time from
CAS
t
CLZ
CAS Precharge Time (Fast Page Mode)
t
CP
11
4, 5, 6
4, 5
4, 6
4, 12
7
14
5
6
12
11
11
8, 11
8
4
7
4
3
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
90
131
35
76
—
—
—
—
0
0
3
30
50
50
13
7
13
50
17
12
5
0
7
0
7
25
0
0
0
—
0
—
13
30
—
—
—
—
50
13
25
30
—
13
50
—
10,000
100,000
—
—
10,000
—
37
25
—
—
—
—
—
—
—
—
—
13
13
16
—
—
130
185
45
100
—
—
—
—
0
0
3
50
70
70
20
10
20
70
20
15
5
0
10
0
15
35
0
0
0
—
0
—
20
40
—
—
—
—
70
20
35
40
—
20
50
—
10,000
100,000
—
—
10,000
—
50
35
—
—
—
—
—
—
—
—
—
20
20
16
—
—
110
155
40