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Semiconductor
MSM5117800D
2,097,152-Word
´´´´
8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5117800D is a 2,097,152-word
´ 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM5117800D achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM5117800D is available in a 28-pin plastic SOJ, 28-pin plastic TSOP.
FEATURES
·
2,097,152-word
´ 8-bit configuration
·
Single 5V power supply,
±10% tolerance
·
Input
: TTL compatible, low input capacitance
·
Output
: TTL compatible, 3-state
·
Refresh : 2048 cycles/32 ms
·
Fast page mode, read modify write capability
·
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
·
Multi-bit test mode capability
·
Package options:
28-pin 400mil plastic SOJ
(SOJ28-P-400-1.27)
(Product : MSM5117800D-xxJS)
28-pin 400mil plastic TSOP
(TSOPII28-P-400-1.27-K)
(Product : MSM5117800D-xxTS-K)
(TSOPII28-P-400-1.27-L)
(Product : MSM5117800D-xxTS-L)
xx : indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Power Dissipation
Family
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
(Min.)
Operating (Max.)
Standby (Max.)
MSM5117800D-50
50ns
25ns
13ns
13ns
90ns
550mW
MSM5117800D-60
60ns
30ns
15ns
15ns
110ns
495mW
MSM5117800D-70
70ns
35ns
20ns
20ns
130ns
440mW
5.5mW
This version:Apr.1999
MSM5117800D
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PIN CONFIGRATION (TOP VIEW)
Pin Name
Function
A0–A9, A10R
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1–DQ8
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5V)
V
SS
Ground (0V)
NC
No Connection
28-Pin Plastic SOJ
28-Pin Plastic TSOP
(L Type)
1
2
3
4
5
6
7
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
27
DQ1
DQ2
V
CC
V
CC
V
SS
V
SS
DQ6
A8
A7
A6
A10R
A1
A2
A3
WE
RAS
NC
DQ3
A5
A4
OE
DQ8
DQ7
CAS
8
DQ4
20
A9
14
A0
DQ5
28
1
2
3
4
5
6
7
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
27
DQ1
DQ2
V
CC
V
CC
V
SS
V
SS
DQ6
A8
A7
A6
A10R
A1
A2
A3
WE
RAS
NC
DQ3
A5
A4
OE
DQ8
DQ7
CAS
8
DQ4
20
A9
14
A0
DQ5
28
1
2
3
4
5
6
8
9
10
11
12
13
28
27
26
23
22
21
19
18
17
16
15
20
DQ1
DQ2
V
CC
V
CC
V
SS
V
SS
DQ8
DQ7
A9
A8
A7
A6
A0
A1
A2
A3
WE
RAS
NC
A10R
A5
A4
CAS
OE
7
DQ4
14
DQ3
25
24
DQ6
DQ5
28-Pin Plastic TSOP
(K Type)
MSM5117800D
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BLOCK DIAGRAM
A0 – A9
8
8
8
10
11
10
Timing
Generator
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Refresh
Control Clock
Column Decoders
Sense Amplifiers
Memory
Cells
Word
Drivers
Row
Deco-
ders
I/O
Selector
Input
Buffers
Output
Buffers
DQ1 – DQ
8
OE
WE
RAS
CAS
V
CC
V
SS
On Chip
V
BB
Generator
I/O
Controller
On Chip
IV
CC
Generator
8
8
8
10
A10R
1
MSM5117800D
4/14
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage
on
Any Pin Relative to V
SS
V
IN
, V
OUT
-
0.5 to V
CC
+
0.5
V
Voltage V
CC
supply Relative to V
SS
V
CC
0.5 to 7.0
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D*
1
W
Operating Temperature
T
opr
0 to 70
°C
Storage Temperature
T
stg
-
55 to 150
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
CC
4.5
5.0
5.5
V
Power Supply Voltage
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
¾
V
CC
+
0.5
*1
V
Input Low Voltage
V
IL
-
0.5
*2
¾
0.8
V
Notes:
*1. The input voltage is V
CC
+ 2.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
- 2.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which V
SS
is applied).
Capacitance
(V
CC
= 5V ± 10%, Ta = 25°C, f=1MHz)
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance (A0 – A9, A10R)
C
IN1
¾
5
pF
Input Capacitance
(RAS, CAS, WE, OE)
C
IN2
¾
7
pF
Output Capacitance (DQ1 – DQ8)
C
I/O
¾
7
pF
MSM5117800D
5/14
DC Characteristics
(V
CC
= 5V ± 10%, Ta = 0°C to 70°C)
MSM5117800
D-50
MSM5117800
D-60
MSM5117800
D-70
Parameter
Symbol
Condition
Min.
Max
Min.
Max
Min.
Max
Unit
Note
Output High Voltage
V
OH
I
OH
=
-
5.0mA
2.4
V
CC
2.4
V
CC
2.4
V
CC
V
Output Low Voltage
V
OL
I
OL
= 4.2mA
0
0.4
0
0.4
0
0.4
V
Input Leakage
Current
I
LI
0V
£
V
I
£
6.5V ;
All other pins not
under test = 0V
-
10
10
-
10
10
-
10
10
m
A
Output Leakage
Current
I
LO
DQ disable
0V
£
V
O
£
V
CC
-
10
10
-
10
10
-
10
10
m
A
Average Power
Supply Current
(Operating)
I
CC1
RAS, CAS cycling,
t
RC
= Min.
¾
100
¾
90
¾
80
mA
1,2
RAS, CAS = V
IH
¾
2
¾
2
¾
2
Power Supply
Current
(Standby)
I
CC2
RAS, CAS
³
V
CC
– 0.2V
¾
1
¾
1
¾
1
mA
1
Average Power
Supply Current
(RAS-only Refresh)
I
CC3
RAS cycling,
CAS = V
IH
,
t
RC
= Min.
¾
100
¾
90
¾
80
mA
1,2
Power Supply
Current
(Standby)
I
CC5
RAS = V
IH
,
CAS = V
IL
,
DQ = enable
¾
5
¾
5
¾
5
mA
1
Average Power
Supply Current
(CAS before RAS
Refresh)
I
CC6
RAS = cycling,
CAS before RAS
¾
100
¾
90
¾
80
mA
1,2
Average Power
Supply Current
(Fast Page Mode)
I
CC7
RAS = V
IL
,
CAS cycling,
t
PC
= Min.
¾
80
¾
70
¾
60
mA
1,3
Notes: 1.
I
CC
Max. is specified as I
CC
for output open condition.
2.
The address can be changed once or less while RAS = V
IL
.
3.
The address can be changed once or less while CAS = V
IH
.
MSM5117800D
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AC Characteristic (1/2)
(V
CC
= 5V ± 10%, Ta = 0°C to 70°C) Note1,2,3,11,12
MSM5117800
D-50
MSM5117800
D-60
MSM5117800
D-70
Parameter
Symbol
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Note
Random Read or Write Cycle Time
t
RC
90
¾
110
¾
130
¾
ns
Read Modify Write Cycle Time
t
RWC
131
¾
155
¾
185
¾
ns
Fast Page Mode Cycle Time
t
PC
35
¾
40
¾
45
¾
ns
Fast Page Mode Read Modify
Write Cycle Time
t
PRWC
76
¾
85
¾
100
¾
ns
Access Time from RAS
t
RAC
¾
50
¾
60
¾
70
ns
4,5,6
Access Time from CAS
t
CAC
¾
13
¾
15
¾
20
ns
4,5
Access Time from Column Address
t
AA
¾
25
¾
30
¾
35
ns
4,6
Access Time from CAS Precharge
t
CPA
¾
30
¾
35
¾
40
ns
4
Access Time from OE
t
OEA
¾
13
¾
15
¾
20
ns
4
Output Low Impedance Time from
CAS
t
CLZ
0
¾
0
¾
0
¾
ns
4
CAS to Data Output Buffer Turn-
off Delay Time
t
OFF
0
13
0
15
0
20
ns
7
OE to Data Output Buffer Turn-off
Delay Time
t
OEZ
0
13
0
15
0
20
ns
7
Transition Time
t
T
3
50
3
50
3
50
ns
3
Refresh Period
t
REF
¾
32
¾
32
¾
32
m
s
RAS Precharge Time
t
RP
30
¾
40
¾
50
¾
ns
RAS Pulse Width
t
RAS
50
10,000
60
10,000
70
10,000
ns
RAS Pulse Width (Fast Page Mode)
t
RASP
50
100,000
60
100,000
70
100,000
ns
RAS Hold Time
t
RSH
13
¾
15
¾
20
¾
ns
RAS Hold Time referenced to OE
t
ROH
13
¾
15
¾
20
¾
ns
CAS Precharge Time
(Fast Page Mode)
t
CP
7
¾
10
¾
10
¾
ns
CAS Pulse Width
t
CAS
13
10,000
15
10,000
20
10,000
ns
CAS Hold Time
t
CSH
50
¾
60
¾
70
¾
ns
CAS to RAS Precharge Time
t
CRP
5
¾
5
¾
5
¾
ns
RAS Hold Time from CAS Precharge t
RHCP
30
¾
35
¾
40
¾
ns
RAS to CAS Delay Time
t
RCD
17
37
20
45
20
50
ns
5
RAS to Column Address Delay Time
t
RAD
12
25
15
30
15
35
ns
6
Row Address Set-up Time
t
ASR
0
¾
0
¾
0
¾
ns
Row Address Hold Time
t
RAH
7
¾
10
¾
10
¾
ns
Column Address Set-up Time
t
ASC
0
¾
0
¾
0
¾
ns
MSM5117800D
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AC Characteristic (2/2)
(V
CC
= 5V ± 10%, Ta = 0°C to 70°C) Note1,2,3,11,12
MSM5117800
D-50
MSM5117800
D-60
MSM5117800
D-70
Parameter
Symbol
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Note
Column Address Hold Time
t
CAH
7
¾
15
¾
15
¾
ns
Column Address to RAS Lead Time
t
RAL
25
¾
30
¾
35
¾
ns
Read Command Set-up Time
t
RCS
0
¾
0
¾
0
¾
ns
Read Command Hold Time
t
RCH
0
¾
0
¾
0
¾
ns
8
Read Command Hold Time
referenced to RAS
t
RRH
0
¾
0
¾
0
¾
ns
8
Write Command Set-up Time
t
WCS
0
¾
0
¾
0
¾
ns
9
Write Command Hold Time
t
WCH
7
¾
10
¾
15
¾
ns
Write Command Pulse Width
t
WP
7
¾
10
¾
10
¾
ns
OE Command Hold Time
t
OEH
13
¾
15
¾
20
¾
ns
Write Command to RAS Lead Time
t
RWL
13
¾
15
¾
20
¾
ns
Write Command to CAS Lead Time
t
CWL
13
¾
15
¾
20
¾
ns
Data-in Set-up Time
t
DS
0
¾
0
¾
0
¾
ns
10
Data-in Hold Time
t
DH
7
¾
15
¾
15
¾
ns
10
OE to Data-in Delay Time
t
OED
13
¾
15
¾
20
¾
ns
CAS to WE Delay Time
t
CWD
36
¾
40
¾
50
¾
ns
9
Column Address to WE Delay Time
t
AWD
48
¾
55
¾
65
¾
ns
9
RAS to WE Delay Time
t
RWD
73
¾
85
¾
100
¾
ns
9
CAS Precharge WE Delay Time
t
CPWD
53
¾
60
¾
70
¾
ns