231
¡ Semiconductor
MSM5117405B
DESCRIPTION
The MSM5117405B is a 4,194,304-word
¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5117405B is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 4,194,304-word
¥ 4-bit configuration
• Single 5 V power supply,
±
10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 2048 cycles/32 ms
• Fast page mode with EDO, read modify write capability
•
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ
(SOJ26/24-P-300-1.27) (Product : MSM5117405B-xxSJ)
26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5117405B-xxTS-K)
(TSOPII26/24-P-300-1.27-L) (Product : MSM5117405B-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
¡ Semiconductor
MSM5117405B
4,194,304-Word
¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
MSM5117405B-70
70 ns
130 ns
90 ns
550 mW
660 mW
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
MSM5117405B-50
t
RAC
50 ns
35 ns
t
AA
25 ns
20 ns
t
CAC
13 ns
20 ns
t
OEA
13 ns
MSM5117405B-60
60 ns
110 ns
605 mW
30 ns
15 ns
15 ns
Operating (Max.)
5.5 mW
E2G0039-17-41
232
MSM5117405B
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
26/24-Pin Plastic SOJ
26/24-Pin Plastic TSOP
(K Type)
26/24-Pin Plastic TSOP
(L Type)
Pin Name
Function
A0 - A10
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ4
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5 V)
V
SS
Ground (0 V)
3
4
5
9
10
11
12
13
DQ2
A0
A1
A2
A3
V
CC
24
23
22
18
17
16
15
14
DQ3
A7
A6
A5
A4
V
SS
2
DQ1
25 DQ4
1
V
CC
26 V
SS
3
4
5
9
10
11
12
13
24
23
22
18
17
16
15
14
2
25
1
26
24
23
22
18
17
16
15
14
3
4
5
9
10
11
12
13
25
2
26
1
,
6
NC
21 A9
21
21
6
8
A10
19 A8
19
19
8
6
8
DQ2
A0
A1
A2
A3
V
CC
DQ1
V
CC
NC
A10
DQ3
A7
A6
A5
A4
V
SS
DQ4
V
SS
A9
A8
DQ3
A7
A6
A5
A4
V
SS
DQ4
V
SS
A9
A8
DQ2
A0
A1
A2
A3
V
CC
DQ1
V
CC
NC
A10
WE
CAS
WE
CAS
CAS
WE
RAS
OE
RAS
OE
OE
RAS
NC
No Connection
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
233
¡ Semiconductor
MSM5117405B
BLOCK DIAGRAM
Timing
Generator
RAS
CAS
Timing
Generator
Internal
Address
Counter
Row
Address
Buffers
Row
De-
coders
Word
Drivers
Memory
Cells
Refresh
Control Clock
Sense
Amplifiers
Column
Decoders
Write
Clock
Generator
I/O
Selector
Output
Buffers
WE
OE
4
DQ1 - DQ4
4
4
4
4
4
Input
Buffers
4
11
A0 - A10
11
11
11
Column
Address
Buffers
V
CC
V
SS
On Chip
IV
CC
Generator
On Chip
V
BB
Generator
234
MSM5117405B
¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
IN
, V
OUT
Symbol
I
OS
P
D
*
T
opr
T
stg
–0.5 to V
CC
+ 0.5
50
1
0 to 70
–55 to 150
Rating
mA
W
°C
°C
Parameter
V
Unit
Voltage on V
CC
Supply Relative to V
SS
V
CC
–0.5 to 7
V
Recommended Operating Conditions
*: Ta = 25
°
C
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
5.0
0
—
—
Typ.
Parameter
4.5
0
2.4
–0.5
*2
Min.
5.5
0
V
CC
+ 0.5
*1
0.8
Max.
(Ta = 0°C to 70°C)
V
Unit
V
V
V
Notes : *1. The input voltage is V
CC
+ 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
– 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
SS
is applied).
Capacitance
Input Capacitance (A0 - A10)
Input Capacitance (
RAS, CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
C
IN1
Symbol
C
IN2
C
I/O
5
7
7
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
—
—
—
Typ.
235
¡ Semiconductor
MSM5117405B
DC Characteristics
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS = V
IL
.
3. The address can be changed once or less while
CAS = V
IH
.
I
OH
= –5.0 mA
Output High Voltage
I
OL
= 4.2 mA
Output Low Voltage
0 V
£ V
I
£ 6.5 V;
All other pins not
Input Leakage Current
under test = 0 V
DQ disable
Output Leakage Current
0 V
£ V
O
£ 5.5 V
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(
RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
DQ = enable
Average Power
CAS before RAS
Supply Current
(
CAS before RAS Refresh)
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
HPC
= Min.
(Fast Page Mode)
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
≥ V
CC
–0.2 V
RAS cycling,
Parameter
Condition
MSM5117405
B-50
MSM5117405
B-60
MSM5117405
B-70
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Symbol
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
120
2
1
120
120
110
5
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
110
2
1
110
110
100
5
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
100
2
1
100
100
90
5
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2
1, 2
1, 2
1, 3
1
1
236
MSM5117405B
¡ Semiconductor
AC Characteristics (1/2)
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from
RAS
Access Time from
CAS
Access Time from Column Address
Access Time from
CAS Precharge
CAS to Data Output Buffer Turn-off Delay Time
Transition Time
RAS Precharge Time
RAS Pulse Width
RAS Pulse Width (Fast Page Mode with EDO)
RAS Hold Time
CAS Pulse Width
CAS Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
Column Address to
RAS Lead Time
Access Time from
OE
OE to Data Output Buffer Turn-off Delay Time
Refresh Period
RAS Hold Time referenced to OE
RAS Hold Time from CAS Precharge
t
RC
t
RWC
t
HPC
t
HPRWC
t
RAC
t
CAC
t
AA
t
CPA
t
CEZ
t
T
t
RP
t
RAS
t
RASP
t
RSH
t
CAS
t
CSH
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
OEA
t
OEZ
t
REF
t
ROH
t
RHCP
Output Low Impedance Time from
CAS
t
CLZ
CAS Precharge Time (Fast Page Mode with EDO) t
CP
Parameter
MSM5117405
B-60
MSM5117405
B-70
MSM5117405
B-50
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3, 12, 13
Symbol
Note
4, 5, 6
4, 5
4, 6
4
7, 8
5
6
4
7
4
3
Max.
—
—
—
—
60
15
30
35
—
15
50
—
10,000
100,000
—
—
10,000
—
45
30
—
—
—
—
—
—
15
15
32
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
Min.
84
110
20
58
—
—
—
—
0
0
1
30
50
50
7
7
7
35
11
9
5
0
7
0
7
25
—
0
—
7
30
Max.
—
—
—
—
50
13
25
30
—
13
50
—
10,000
100,000
—
—
10,000
—
37
25
—
—
—
—
—
—
13
13
32
—
—
Min.
124
160
30
78
—
—
—
—
0
0
1
50
70
70
13
10
13
45
14
12
5
0
13
0
13
35
—
0
—
13
40
Max.
—
—
—
—
70
20
35
40
—
20
50
—
10,000
100,000
—
—
10,000
—
50
35
—
—
—
—
—
—
20
20
32
—
—
Min.
104
135
25
68
—
—
—
—
0
0
1
40
60
60
10
10
10
40
14
12
5
0
10
0
10
30
—
0
—
10
35
—
Data Output Hold After
CAS Low
WE to Data Output Buffer Turn-off Delay Time
RAS to Data Output Buffer Turn-off Delay Time
t
DOH
t
WEZ
t
REZ
7, 8
7
—
15
15
ns
ns
ns
5
0
0
—
13
13
5
0
0
—
20
20
5
0
0
OE Hold Time from CAS (DQ Disable)
t
CHO
ns
5
—
5
—
5
—
237
¡ Semiconductor
MSM5117405B
AC Characteristics (2/2)
Write Command Pulse Width
Write Command to
CAS Lead Time
Write Command to
RAS Lead Time
Data-in Set-up Time
CAS to WE Delay Time
RAS to WE Delay Time
Column Address to
WE Delay Time
RAS to CAS Hold Time (CAS before RAS)
CAS Active Delay Time from RAS Precharge
Data-in Hold Time
Write Command Hold Time
OE Command Hold Time
OE to Data-in Delay Time
Write Command Set-up Time
RAS to CAS Set-up Time (CAS before RAS)
WE to RAS Precharge Time (CAS before RAS)
WE Hold Time from RAS (CAS before RAS)
RAS to WE Set-up Time (Test Mode)
CAS Precharge WE Delay Time
RAS to WE Hold Time (Test Mode)
t
WP
t
CWL
t
RWL
t
DS
t
CWD
t
RWD
t
AWD
t
CSR
t
CHR
t
RPC
t
DH
t
WCH
t
OEH
t
OED
t
WCS
t
WRP
t
WRH
t
WTS
t
CPWD
t
WTH
MSM5117405
B-60
MSM5117405
B-70
MSM5117405
B-50
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3, 12, 13
Parameter
Symbol
Max.
10
10
10
ns
ns
ns
10
10
10
10
10
10
Note
11
10
10
10
11
10
10
10
ns
10
10
Min.
10
10
10
0
34
79
49
5
10
5
10
10
10
15
0
54
Max.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
Min.
7
7
7
0
30
67
42
5
10
5
7
7
7
13
0
47
Max.
Min.
10
13
13
0
44
94
59
5
10
5
13
13
13
20
0
64
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—