background image
FEDD5117400F-01
1Semiconductor
This version: June. 2000
Previous version :
MSM5117400F
4,194,304-Word
××××
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1/15
DESCRIPTION
The MSM5117400F is a 4,194,304-word
×
4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM5117400F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MSM5117400F is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP.
FEATURES
∙
4,194,304-word
×
4-bit configuration
∙
Single 5V power supply,
±
10% tolerance
∙
Input
: TTL compatible, low input capacitance
∙
Output : TTL compatible, 3-state
∙
Refresh : 2048 cycles/32ms
∙
Fast page mode, read modify write capability
∙
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
∙ Packages
26/24-pin 300mil plastic SOJ
(
SOJ26/24-P-300-1.27
)
(Product : MSM5117400F-xxSJ)
26/24-pin 300mil plastic TSOP
(
TSOPII26/24-P-300-0.80-K
)
(Product : MSM5117400F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Power Dissipation
Family
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
(Min.)
Operating
(Max.)
Standby
(Max.)
50ns
25ns
13ns
13ns
90ns
550mW
60ns
30ns
15ns
15ns
110ns
495mW
MSM5117400F
70ns
35ns
20ns
20ns
130ns
440mW
5.5mW
background image
FEDD5117400F-01
1Semiconductor
MSM5117400F
2/15
PIN CONFIGURATION (TOP VIEW)
Pin Name
Function
A0–A10
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1–DQ4
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5V)
V
SS
Ground (0V)
NC
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
DQ1
DQ2
V
CC
V
CC
V
SS
V
SS
A9
A8
A7
A6
A0
A1
A2
A3
WE
RAS
NC
A10
A5
A4
OE
DQ4
DQ3
CAS
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
DQ1
DQ2
V
CC
V
CC
V
SS
V
SS
DQ4
DQ3
A9
A8
A7
A6
A0
A1
A2
A3
WE
RAS
NC
A10
A5
A4
CAS
OE
26/24-Pin Plastic
SOJ
26/24-Pin Plastic TSOP
(K Type)
background image
FEDD5117400F-01
1Semiconductor
MSM5117400F
3/15
BLOCK DIAGRAM
4
4
4
4
4
4
11
11
11
11
Timing
Generator
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Refresh
Control Clock
Column Decoders
Sense Amplifiers
Memory
Cells
Word
Drivers
Row
Deco-
ders
I/O
Selector
Input
Buffers
Output
Buffers
DQ1
−
DQ
4
OE
WE
RAS
CAS
V
CC
V
SS
On Chip
V
BB
Generator
Timing
Generator
4
Write
Clock
Generator
A0
−
A10
background image
FEDD5117400F-01
1Semiconductor
MSM5117400F
4/15
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage V
CC
Supply relative to V
SS
V
T
–0.5 to V
CC
+0.5
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D*
1
W
Operating Temperature
T
opr
0 to 70
°C
Storage Temperature
T
stg
–55 to 150
°C
*: Ta = 25
°
C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
CC
4.5
5.0
5.5
V
Power Supply Voltage
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
V
CC
+ 0.5
*1
V
Input Low Voltage
V
IL
−
0.5
*2
0.8
V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 5V
±
10%, Ta = 25°C, f = 1 MHz)
Parameter
Symbol
Min.
Typ.
Min.
Unit
Input Capacitance (A0 – A10)
C
IN1
—
—
5
pF
Input Capacitance
(
RAS
,
CAS
,
WE
,
OE
)
C
IN2
—
—
7
pF
Output Capacitance (DQ1 – DQ4)
C
I/O
—
—
7
pF
background image
FEDD5117400F-01
1Semiconductor
MSM5117400F
5/15
DC CHARACTERISTICS
(V
CC
= 5V
±
10%, Ta = 0 to 70°C)
MSM5117400
F-50
MSM5117400
F-60
MSM5117400
F-70
Parameter
Symbol
Condition
Min.
Max.
Min.
Max.
Min.
Max.
Unit Note
Output High Voltage V
OH
I
OH
=
−
5.0mA
2.4
V
CC
2.4
V
CC
2.4
V
CC
V
Output Low Voltage
V
OL
I
OL
= 4.2mA
0
0.4
0
0.4
0
0.4
V
Input Leakage
Current
I
LI
0V
≤
V
I
≤
6.5V;
All other pins not
under test = 0V
−
10
10
−
10
10
−
10
10
µ
A
Output Leakage
Current
I
LO
DQ disable
0V
≤
V
O
≤
V
CC
−
10
10
−
10
10
−
10
10
µ
A
Average Power
Supply Current
(Operating)
I
CC1
RAS
,
CAS
cycling,
t
RC
= Min.
100
90
80
mA
1,2
RAS
,
CAS
= V
IH
2
2
2
Power Supply
Current
(Standby)
I
CC2
RAS
,
CAS
≥
V
CC
−
0.2V
1
1
1
mA
1
Average Power
Supply Current
(
RAS
-only Refresh)
I
CC3
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
100
90
80
mA
1,2
Power Supply
Current
(Standby)
I
CC5
RAS
= V
IH
,
CAS
= V
IL
,
DQ = enable
5
5
5
mA
1
Average Power
Supply Current
(
CAS
before
RAS
Refresh)
I
CC6
RAS
= cycling,
CAS
before
RAS
100
90
80
mA
1,2
Average Power
Supply Current
(Fast Page Mode)
I
CC7
RAS
= V
IL
,
CAS
cycling,
t
PC
= Min.
80
70
60
mA
1,3
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS = V
IL
.
3. The address can be changed once or less while
CAS = V
IH
.
background image
FEDD5117400F-01
1Semiconductor
MSM5117400F
6/15
AC CHARACTERISTICS (1/2)
(V
CC
= 5V
±
10%, Ta = 0 to 70°C) Note1,2,3,11,12
MSM5117400
F-50
MSM5117400
F-60
MSM5117400
F-70
Parameter
Symbol
Min.
Max.
Min.
Max.
Min.
Max.
Unit Note
Random Read or Write Cycle Time
t
RC
90
110
130
ns
Read Modify Write Cycle Time
t
RWC
131
155
185
ns
Fast Page Mode Cycle Time
t
PC
35
40
45
ns
Fast Page Mode Read Modify Write
Cycle Time
t
PRWC
76
85
100
ns
Access Time from
RAS
t
RAC
50
60
70
ns 4, 5, 6
Access Time from
CAS
t
CAC
13
15
20
ns
4, 5
Access Time from Column Address
t
AA
25
30
35
ns
4, 6
Access Time from
CAS
Precharge
t
CPA
30
35
40
ns
4
Access Time from
OE
t
OEA
13
15
20
ns
4
Output Low Impedance Time from
CAS
t
CLZ
0
0
0
ns
4
CAS
to Data Output Buffer Turn-
off Delay Time
t
OFF
0
13
0
15
0
20
ns
7
OE
to Data Output Buffer Turn-off
Delay Time
t
OEZ
0
13
0
15
0
20
ns
7
Transition Time
t
T
3
50
3
50
3
50
ns
3
Refresh Period
t
REF
32
32
32
ms
RAS
Precharge Time
t
RP
30
40
50
ns
RAS
Pulse Width
t
RAS
50
10,000
60
10,000
70
10,000
ns
RAS
Pulse Width (Fast Page Mode) t
RASP
50
100,000
60
100,000
70
100,000 ns
RAS
Hold Time
t
RSH
13
15
20
ns
RAS
Hold Time referenced to
OE
t
ROH
13
15
20
ns
CAS
Precharge Time
(Fast Page Mode)
t
CP
7
10
10
ns
CAS
Pulse Width
t
CAS
13
10,000
15
10,000
20
10,000
ns
CAS
Hold Time
t
CSH
50
60
70
ns
CAS
to
RAS
Precharge Time
t
CRP
5
5
5
ns
RAS
Hold Time from
CAS
Precharge t
RHCP
30
35
40
ns
RAS
to
CAS
Delay Time
t
RCD
17
37
20
45
20
50
ns
5
RAS
to Column Address Delay Time t
RAD
12
25
15
30
15
35
ns
6
Row Address Set-up Time
t
ASR
0
0
0
ns
background image
FEDD5117400F-01
1Semiconductor
MSM5117400F
7/15
AC CHARACTERISTICS (2/2)
(V
CC
= 5V
±
10%, Ta = 0 to 70°C) Note1,2,3,11,12
MSM5117400
F-50
MSM5117400
F-60
MSM5117400
F-70
Parameter
Symbol
Min.
Max.
Min.
Max.
Min.
Max.
Unit Note
Row Address Hold Time
t
RAH
7
10
10
ns
Column Address Set-up Time
t
ASC
0
0
0
ns
Column Address Hold Time
t
CAH
7
10
15
ns
Column Address to
RAS
Lead Time
t
RAL
25
30
35
ns
Read Command Set-up Time
t
RCS
0
0
0
ns
Read Command Hold Time
t
RCH
0
0
0
ns
8
Read Command Hold Time
referenced to
RAS
t
RRH
0
0
0
ns
8
Write Command Set-up Time
t
WCS
0
0
0
ns
9
Write Command Hold Time
t
WCH
7
10
15
ns
Write Command Pulse Width
t
WP
7
10
10
ns
OE
Command Hold Time
t
OEH
13
15
20
ns
Write Command to
RAS
Lead Time
t
RWL
13
15
20
ns
Write Command to
CAS
Lead Time
t
CWL
13
15
20
ns
Data-in Set-up Time
t
DS
0
0
0
ns
10
Data-in Hold Time
t
DH
7
10
15
ns
10
OE
to Data-in Delay Time
t
OED
13
15
20
ns
CAS
to
WE
Delay Time
t
CWD
36
40
50
ns
9
Column Address to
WE
Delay Time
t
AWD
48
55
65
ns
9
RAS
to
WE
Delay Time
t
RWD
73
85
100
ns
9
CAS
Precharge
WE
Delay Time
t
CPWD
53
60
70
ns
9
<