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¡ Semiconductor
MSM511000C/CL
DESCRIPTION
The MSM511000C/CL is a 1,048,576-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM511000C/CL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM511000C/CL is available in a 26/20-pin plastic SOJ or
20-pin plastic ZIP. The MSM511000CL (the low-power version) is specially designed for lower-
power applications.
FEATURES
• 1,048,576-word ¥ 1-bit configuration
• Single 5 V power supply,
±
10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 512 cycles/8 ms, 512 cycles/64 ms (L-version)
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Package options:
26/20-pin 300 mil plastic SOJ
(SOJ26/20-P-300-1.27) (Product : MSM511000C/CL-xxJS)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM511000C/CL-xxZS)
xx indicates speed rank.
PRODUCT FAMILY
¡ Semiconductor
MSM511000C/CL
1,048,576-Word
¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM511000C/CL-50
50 ns
100 ns
120 ns
440 mW
385 mW
5.5 mW/
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
MSM511000C/CL-60
t
RAC
60 ns
26 ns
t
AA
30 ns
14 ns
t
CAC
15 ns
MSM511000C/CL-45
45 ns
90 ns
468 mW
24 ns
14 ns
Operating (Max.)
1.1 mW (L-version)
130 ns
330 mW
MSM511000C/CL-70
70 ns
35 ns
20 ns
E2G0009-17-41
This version: Jan. 1998
Previous version: May 1997
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MSM511000C/CL
PIN CONFIGURATION (TOP VIEW)
3
5
7
11
13
15
17
19
D
OUT
D
IN
RAS
A0
A2
V
CC
A5
A7
1
A9
9
NC
4
6
8
12
14
16
18
20
V
SS
WE
NC
A1
A3
A4
A6
A8
2
CAS
20-Pin Plastic ZIP
NO LEAD
3
4
5
9
10
11
12
13
RAS
NC
NC
A0
A1
A2
A3
V
CC
24
23
22
18
17
16
15
14
CAS
NC
A9
A8
A7
A6
A5
A4
2
WE
25 D
OUT
1
D
IN
26 V
SS
26/20-Pin Plastic SOJ
,
Pin Name
Function
A0 - A9
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
D
IN
Data Input
D
OUT
Data Output
WE
Write Enable
V
CC
Power Supply (5 V)
V
SS
Ground (0 V)
NC
No Connection
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MSM511000C/CL
BLOCK DIAGRAM
WE
RAS
CAS
Timing
Generator
Timing
Generator
Column
Decoders
Write
Clock
Generator
Sense
Amplifiers
I/O
Selector
Output
Buffer
D
OUT
D
IN
Input
Buffer
Memory
Cells
Row
Address
Buffers
On Chip
V
BB
Generator
V
CC
V
SS
Internal
Address
Counter
Column
Address
Buffers
Refresh
Control Clock
A0 - A9
Row
De-
coders
Word
Drivers
10
10
10
10
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¡ Semiconductor
MSM511000C/CL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Recommended Operating Conditions
Capacitance
*: Ta = 25
°
C
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
T
Symbol
I
OS
P
D
*
T
opr
T
stg
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Rating
mA
W
°C
°C
Parameter
V
Unit
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
5.0
0
—
—
Typ.
Parameter
4.5
0
2.4
–1.0
Min.
5.5
0
6.5
0.8
Max.
(Ta = 0°C to 70°C)
V
Unit
V
V
V
Input Capacitance (A0 - A9, D
IN
)
Input Capacitance (RAS, CAS, WE)
Output Capacitance (D
OUT
)
C
IN1
Symbol
C
IN2
C
OUT
5
5
6
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
—
—
—
Typ.
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¡ Semiconductor
MSM511000C/CL
DC Characteristics
I
OH
= –5.0 mA
Output High Voltage
I
OL
= 4.2 mA
Output Low Voltage
0 V £ V
I
£ 6.5 V;
All other pins not
Input Leakage Current
under test = 0 V
D
OUT
disable
Output Leakage Current
0 V £ V
O
£ 5.5 V
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
D
OUT
= enable
Average Power
CAS before RAS
Supply Current
(CAS before RAS Refresh)
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
PC
= Min.
(Fast Page Mode)
t
RC
= 125 ms,
Average Power
CAS before RAS,
Supply Current
t
RAS
£ 1 ms
(Battery Backup)
≥ V
CC
–0.2 V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
RAS cycling,
Parameter
Symbol
Condition
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
I
CC10
MSM511000
C/CL-45
MSM511000
C/CL-50
MSM511000
C/CL-60
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
85
1
200
85
5
85
80
300
2
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
80
1
200
80
5
80
75
300
2
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
70
1
200
70
5
70
65
300
2
Unit
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Note
1, 2
1, 5
1, 2
1
1, 2
1, 3
1, 4,
5
1
MSM511000
C/CL-70
Min.
2.4
0
–10
–10
—
—
—
—
—
—
—
—
—
Max.
V
CC
0.4
10
10
60
1
200
60
5
60
55
300
2
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while RAS = V
IL
.
3. The address can be changed once or less while CAS = V
IH
.
4. V
CC
– 0.2 V £ V
IH
£ 6.5 V, –1.0 V £ V
IL
£ 0.2 V.
5. L-version.
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¡ Semiconductor
MSM511000C/CL
AC Characteristics (1/2)
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Output Low Impedance Time from CAS
Transition Time
Refresh Period
Refresh Period (L-version)
RAS Precharge Time
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
CAS Precharge Time (Fast Page Mode)
CAS Pulse Width
RAS Pulse Width
CAS Hold Time
CAS to RAS Precharge Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
Column Address Hold Time from RAS
Column Address to RAS Lead Time
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
CAS to Data Output Buffer Turn-off Delay Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameter
MSM511000
C/CL-45
MSM511000
C/CL-50
MSM511000
C/CL-60
t
RC
t
RWC
t
PC
t
PRWC
t
RAC
t
CAC
t
AA
t
CPA
t
CLZ
t
OFF
t
T
t
REF
t
REF
t
RP
t
RAS
t
RASP
t
RSH
t
CP
t
CAS
t
CSH
t
CRP
t
RCD
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
t
RAL
t
RHCP
Min.
90
110
34
54
—
—
—
—
0
0
3
—
—
35
45
45
14
10
14
45
5
17
12
0
7
0
12
35
24
28
Max.
—
—
—
—
45
14
24
28
—
14
50
8
64
—
10,000
100,000
—
—
10,000
—
—
31
21
—
—
—
—
—
—
—
Min.
100
120
36
56
—
—
—
—
0
0
3
—
—
40
50
50
14
10
14
50
5
18
13
0
8
0
13
40
26
30
Max.
—
—
—
—
50
14
26
30
—
14
50
8
64
—
10,000
100,000
—
—
10,000
—
—
36
24
—
—
—
—
—
—
—
Min.
120
140
40
60
—
—
—
—
0
0
3
—
—
50
60
60
15
10
15
60
5
20
15
0
10
0
15
50
30
35
Max.
—
—
—
—
60
15
30
35
—
15
50
8
64
—
10,000
100,000
—
—
10,000
—
—
45
30
—
—
—
—
—
—
—
Unit Note
4, 5, 6
4, 5
4, 6
4
4
7
3
5
6
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3
MSM511000
C/CL-70
Min.
130
155
45
70
—
—
—
—
0
0
3
—
—
50
70
70
20
10
20
70
5
20
15
0
10
0
15
55
35
40
Max.
—
—
—
—
70
20
35
40
—
20
50
8
64
—
10,000
100,000
—
—
10,000
—
—
50
35
—
—
—
—
—
—
—
Symbol
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¡ Semiconductor
MSM511000C/CL
AC Characteristics (2/2)
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time referenced to RAS
Write Command Set-up Time
Write Command Hold Time
Write Command Hold Time from RAS
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Set-up Time
Data-in Hold Time
Data-in Hold Time from RAS
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to WE Delay Time
CAS Active Delay Time from RAS Precharge
RAS to CAS Set-up Time (CAS before RAS)
RAS to CAS Hold Time (CAS before RAS)
CAS Precharge WE Delay Time
Parameter
Symbol
MSM511000
C/CL-45
MSM511000
C/CL-50
MSM511000
C/CL-60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
8
8
9
10
10
9
9
9
9
t
RCS
t
RCH
t
RRH
t
WCS
t
WCH
t
WP
t
CWL
t
RWL
t
DS
t
DH
t
DHR
t
CWD
t
AWD
t
RWD
t
CPWD
t
RPC
t
CSR
t
CHR
t
WCR
Min.
0
0
0
0
10
10
14
14
0
12
35
14
24
45
33
0
10
25
35
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ns
Min.
0
0
0
0
10
10
14
14
0
13
40
14
26
50
35
0
10
25
40
Max. Min.
0
0
0
0
10
10
15
15
0
15
50
15
30
60
40
0
10
30
50
Max.
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C) Note 1, 2, 3
MSM511000
C/CL-70
Min.
0
0
0
0
15
15
20
20
0
15
55
20
35