1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Preliminary Information
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLine
™
Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
•
Miniature TSOP 6 Surface Mount Package Saves Board Space
•
Visit our Web Site at http://www.mot–sps.com/ospd
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Gate–to–Source Voltage — Continuous
VGS
±
20
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Pulsed Drain Current (tp
≤
10
µ
s)
ID
IDM
4.2
20
A
Total Power Dissipation @ TA = 25
°
C Mounted on FR4 t
5 sec
PD
2.0
W
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
R
θ
JA
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TL
260
°
C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF3454VT1
7
″
8 mm embossed tape
3000
MGSF3454VT3
13
″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGSF3454VT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 318G–02, Style 1
TSOP 6 PLASTIC
MGSF3454VT1
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 50 m
Ω
(TYP)
Motorola Preferred Device
™
D
D
D
G
D
S
DRAIN
3
GATE
SOURCE
4
6
5
2
1
©
Motorola, Inc. 1997
™
MGSF3454VT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
µ
A)
V(BR)DSS
30
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70
°
C)
IDSS
—
—
—
—
1.0
25
µ
Adc
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IGSS
—
—
±
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
µ
Adc)
VGS(th)
1.0
—
—
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 4.2 A)
(VGS = 4.5 Vdc, ID = 3.4 A)
rDS(on)
—
—
0.05
0.07
0.065
0.095
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
—
90
—
pF
Output Capacitance
(VDS = 5.0 V)
Coss
—
50
—
Transfer Capacitance
(VDG = 5.0 V)
Crss
—
10
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
10 Vd
I
1 0 A
td(on)
—
10
20
ns
Rise Time
(VDD = 10 Vdc, ID = 1.0 A,
tr
—
15
30
Turn–Off Delay Time
( DD
, D
,
VGEN = 10 V, RL = 10
Ω
)
td(off)
—
20
35
Fall Time
tf
—
10
20
Gate Charge
QT
—
—
15
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
—
—
1.0
A
Pulsed Current
ISM
—
—
5.0
A
Forward Voltage(2)
VSD
—
—
1.2
V
(1) Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
MGSF3454VT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
1
2
3
4
0
4
8
12
20
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
I D
, DRAIN CURRENT
(A)
0
1
2
3
4
0
4
8
12
I D
, DRAIN CURRENT
(A)
VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0
4
8
12
16
20
0
0.04
0.08
0.12
R
DS(on)
, ON–RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (A)
Figure 3. On–Resistance vs. Drain Current
Figure 4. Capacitance
Figure 5. Gate Charge
TJ = –55
°
C
25
°
C
125
°
C
16
3 V
5 V
4 V
16
20
5
6
0.16
0.20
VGS = 4.5 V
R
DS(on)
, ON–RESIST
ANCE
(OHMS)
(NORMALIZED)
–50
0.75
1.00
1.25
1.50
TJ, JUNCTION TEMPERATURE (
°
C)
–25
0
25
50
75
100
150
VGS = 10 V
ID = 4.2 A
1.75
125
VGS = 10, 9, 8, 7, 6V
VGS = 10 V
Figure 6. On–Resistance vs. Junction Temperature
6
12
18
VDS – DRAIN–TO–SOURCE VOLTAGE (V)
C, CAP
ACIT
ANCE
(pF)
Ciss
Coss
Crss
24
30
V
GS
, GA
TE–T
O–SOURCE
VOL
TAGE
(V)
0
Qg, TOTAL GATE CHARGE (nC)
1.5
3.0
4.5
6.0
9.0
VDS = 15 V
ID = 4.2 A
0
10
8
6
4
2
7.5
0
0
80
160
240
320
400
480
560
MGSF3454VT1
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. Source–Drain Diode Forward Voltage
Figure 8. On–Resistance vs. Gate–to–Source Voltage
Figure 9. Threshold Voltage
NORMALIZED EFFECTIVE
TRANSIENT
THERMAL
IMPEDANCE
Square Wave Pulse Duration (sec)
2
0.1
0.01
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
Figure 10. Single Pulse Power
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
TJ, TEMPERATURE (
°
C)
25
50
75
100
125
ID = 250
µ
A
150
–0.8
0.4
0.2
0.0
–0.2
–0.4
–0.6
0
VSD, SOURCE–TO–DRAIN VOLTAGE (V)
I S
, SOURCE CURRENT
(A)
1
10
40
TJ = 150
°
C
0
0.25
0.50
0.75
1.00
1.25
1.5
1.75
0
2
4
6
8
10
0
0.04
0.08
0.12
R
DS(on)
, ON–RESIST
ANCE
(OHMS)
VGS – GATE–TO–SOURCE VOLTAGE (V)
0.16
0.20
ID = 4.2 A
0.01
0.10
1.00
10.00
0
6
12
18
POWER (W)
TIME (sec)
24
30
TJ = 25
°
C
–25
–50
V
, V
ARIANCE
(V)
GS(th)
1
0.2
Duty Cycle = 0.5
0.05
SINGLE PULSE
0.1
0.02
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
MGSF3454VT1
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
mm
inches
1.9
0.039
1.0
0.094
0.7
0.074
2.4
0.028
0.95
0.037
0.95
0.037
TSOP–6
TSOP–6 POWER DISSIPATION
The power dissipation of the TSOP–6 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
θ
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the TSOP–6 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
R
θ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
°
C, one can
calculate the power dissipation of the device which in this
case is 2.0 watts.
PD =
150
°
C – 25
°
C
62.5
°
C/W
= 2.0 watts
The 62.5
°
C/W for the TSOP–6 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 2.0 watts. There are
other alternatives to achieving higher power dissipation from
the TSOP–6 package. Another alternative would be to use a
ceramic substrate or an aluminum core board such as
Thermal Clad
™
. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•
Always preheat the device.
•
The delta temperature between the preheat and
soldering should be 100
°
C or less.*
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
°
C.
•
The soldering temperature and time shall not exceed
260
°
C for more than 10 seconds.
•
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
°
C or less.
•
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
MGSF3454VT1
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 318G–02
ISSUE A
TSOP 6 PLASTIC
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
2
3
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
0.1142
0.1220
2.90
3.10
B
0.0512
0.0669
1.30
1.70
C
0.0354
0.0433
0.90
1.10
D
0.0098
0.0197
0.25
0.50
G
0.0335
0.0413
0.85
1.05
H
0.0005
0.0040
0.013
0.100
J
0.0040
0.0102
0.10
0.26
K
0.0079
0.0236
0.20
0.60
L
0.0493
0.0610
1.25
1.55
M
0
10
0
10
S
0.0985
0.1181
2.50
3.00
_
_
_
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
M
J
K
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
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™
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INTERNET: http://www.mot.com/SPS/
This device has a class 1 ESD rating.
MGSF3454VT1/D
◊