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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

Specifically designed for power audio output, or high power drivers in audio

amplifiers.

•

DC Current Gain Specified up to 8.0 Amperes at Temperature

•

All On Characteristics at Temperature

•

High SOA: 20 A, 18 V, 100 ms

•

TO–247AE Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

MJW21191

MJW21192

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎ

150

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎÎÎÎ

150

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

8.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

2.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

100

0.65

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

– 65 to + 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.65

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

C/W

1.0

Figure 1. Typical Capacitance @ 25

VR, REVERSE VOLTAGE (V)

1.0

100

1000

100

1000

C, CAP

ACIT

ANCE

(pF)

NPN

PNP

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJW21192/D

Motorola, Inc. 1997

MJW21192

MJW21191

8.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY

SILICON

150 VOLTS

100 WATTS

NPN

PNP

CASE 340K–01

TO–247AE

MJW21192 MJW21191

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 10 mAdc, IB = 0)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 250 Vdc, IE = 0)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4.0 Adc, VCE = 2.0 Vdc)

(IC = 8.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

5.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

—

100

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 0.4 Adc)

(IC = 8.0 Adc, IB = 1.6 Adc)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.0

2.0

ÎÎÎ

ÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 4.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.0

ÎÎÎ

ÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product (2)

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

(2) fT =



hfe

•

ftest.

JC(t) = r(t) R

JC = 1.65

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

DUTY

CYCLE,

D = t1/t2

Figure 2. Thermal Response

t, TIME (s)

TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

1.0

0.1

D = 0.5

0.00001

0.0001

0.001

0.01

0.1

1.0

0.2

0.05

0.02

0.01

100

1000

0.01

0.1

MJW21192 MJW21191

Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion then the curves indicate.

The data of Figures 3 and 4 is based on TJ(pk) = 150

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

C. TJ(pk) may be calculated from the data in Figure 2.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

Figure 3. NPN — MJW21192

Safe Operating Area

Figure 4. PNP — MJW21191

Safe Operating Area

NPN — MJW21192

PNP — MJW21191

100 ms

10 ms

250 ms

100

1.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

I C

, COLLECT

CURRENT

(AMPS)

1000

1.0

0.1

100

250 ms

100 ms

10 ms

100

1.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

I C

, COLLECT

CURRENT

(AMPS)

1000

1.0

100

0.1

TYPICAL CHARACTERISTICS

Figure 5. NPN — MJW21192

VCE = 2.0 V DC Current Gain

Figure 6. PNP — MJW21191

VCE = 2.0 V DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

100

1000

0.01

1.0

100

1.0

0.1

, DC CURRENT

GAIN

100

1000

0.01

IC, COLLECTOR CURRENT (AMPS)

1.0

, DC CURRENT

GAIN

100

1.0

0.1

NPN — MJW21192

PNP — MJW21191

MJW21192 MJW21191

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

Figure 7. NPN — MJW21192

VCE = 5.0 V DC Current Gain

Figure 8. PNP — MJW21191

VCE = 5.0 V DC Current Gain

0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

0.1

0.01

, VOL

TAGE

(VOL

TS)

NPN — MJW21192

PNP — MJW21191

, VOL

TAGE

(VOL

TS)

Figure 9. NPN — MJW21192

VCE(sat) IC/IB = 5.0

Figure 10. PNP — MJW21191

VCE(sat) IC/IB = 5.0

1.0

0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

0.1

0.01

Figure 11. NPN — MJW21192

VCE(sat) IC/IB = 10

Figure 12. PNP — MJW21191

VCE(sat) IC/IB = 10

1.0

100

IC, COLLECTOR CURRENT (AMPS)

1.0

0.1

0.01

0.1

1.0

100

, VOL

TAGE

(VOL

TS)

0.1

IC, COLLECTOR CURRENT (AMPS)

1.0

0.01

1.0

, VOL

TAGE

(VOL

TS)

100

IC, COLLECTOR CURRENT (AMPS)

100

1000

0.01

1.0

100

1.0

0.1

, DC CURRENT

GAIN

, DC CURRENT

GAIN

100

1000

0.01

1.0

100

1.0

0.1

SPACE

MJW21192 MJW21191

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340K–03

(TO–247AE)

ISSUE A

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.25 (0.010)

T B

0.25 (0.010)

Y Q

–T–

–B–

–Y–

–Q–

DIM

MIN

MAX

MIN

MAX

INCHES

MILLIMETERS

19.7

20.3

0.776

0.799

15.3

15.9

0.602

0.626

4.7

5.3

0.185

0.209

1.0

1.4

0.039

0.055

1.27 REF

0.050 REF

2.0

2.4

0.079

0.094

5.5 BSC

0.216 BSC

2.2

2.6

0.087

0.102

0.4

0.8

0.016

0.031

14.2

14.8

0.559

0.583

5.5 NOM

0.217 NOM

3.7

4.3

0.146

0.169

3.55

3.65

0.140

0.144

5.0 NOM

0.197 NOM

5.5 BSC

0.217 BSC

3.0

3.4

0.118

0.134

MJW21192 MJW21191

Motorola Bipolar Power Transistor Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

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