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MSC0936.PDF 10-15-98
SD1127
DESCRIPTION:
DESCRIPTION:
THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR
ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A
BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED
EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25ºC)
Symbol
Parameter
Value
Unit
P
DISS
Total Power Dissipation *
8.0
W
V
CBO
Collector-base Voltage
36
V
V
CEO
Collector-emitter Voltage (I
B
=0)
18
V
I
C
Collector Current *
0.64
A
T
STG
Storage Temperature
-65 to 200
º
C
T
J
Junction Temperature
200
º
C
*At RF Conditions
Thermal Data
Thermal Data
R
TH(J-C)
)
Thermal Resistance Junction-case
21.9
°°
C/W
Features
DESIGNED FOR VHF MILITARY AND COMMERCIAL
EQUIPMENT
4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN
GROUNDED EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
VHF COMMUNICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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MSC0936.PDF 10-15-98
SD1127
ELECTRICAL SPECIFICATIONS (
ELECTRICAL SPECIFICATIONS (Tcase = 25
Tcase = 25
°°
C)
C)
STATIC
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Bvceo
I
C
= 10 mA
18
---
---
V
Bvces
I
C
= 5 mA
36
---
---
V
Bvebo
I
E
= 1 mA
4.0
---
---
V
Cob
V
CB
=15V
---
---
0.25
mA
HFE
I
C
= 50 mA
V
CE
=5V
5.0
---
---
---
DYNAMIC
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
P
out
f=175 MHz
V
CE
=12.5V
4.0
---
---
W
G
P
f=175 MHz
V
CE
=12.5V
10
12
---
dB
Cob
f=1 MHz
V
CE
=15V
I
E
= 0 mA
---
---
20
pF
IMPEDANCE DATA
IMPEDANCE DATA
FREQ
Z
IN
(
Ω)
Ω)
Z
CL
(
Ω)
Ω)
175 MHz
4.1- j 5.6
13.5- j 20.0
P
IN
=0.2W V
CE
=12.5V
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MSC0936.PDF 10-15-98
SD1127
PACKAGE MECHANICAL DATA
1. Collector
2. Base
3. Emitter