Parameter
Max.
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 5.0 V
5.2
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 5.0 V
3.3
A
I
DM
Pulsed Drain Current
21
P
D
@T
C
= 25°C
Power Dissipation
50
P
D
@T
A
= 25°C
Power Dissipation (PCB Mount)**
3.1
Linear Derating Factor
0.40
Linear Derating Factor (PCB Mount)**
0.025
V
GS
Gate-to-Source Voltage
±10
V
E
AS
Single Pulse Avalanche Energy
125
mJ
I
AR
Avalanche Current
5.2
A
E
AR
Repetitive Avalanche Energy
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
IRL620S
HEXFET
®
Power MOSFET
PD -9.1218
Revision 0
V
DSS
= 200V
R
DS(on)
= 0.80
Ω
I
D
= 5.2A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
θ
JC
Junction-to-Case
—
—
2.5
R
θ
JA
Junction-to-Ambient (PCB Mount)**
—
—
40
°C/W
R
θ
JA
Junction-to-Ambient
—
—
62
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
=4V & 5V
Fast Switching
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
Description
A
SMD-220
W
W/°C
°C
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
Parameter
Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
200
—
—
V
V
GS
= 0V, ID = 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
—
0.27
—
V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
—
—
0.80
V
GS
= 10.0V, I
D
= 3.1A
—
—
1.0
V
GS
= 4.0V, I
D
= 2.6A
V
GS(th)
Gate Threshold Voltage
1.0
—
2.0
V
V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance
1.2
—
—
S
V
DS
= 50V, I
D
= 3.1A
I
DSS
Drain-to-Source Leakage Current
—
—
25
V
DS
= 200V, V
GS
= 0V
—
—
250
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
—
—
100
V
GS
= 10V
Gate-to-Source Reverse Leakage
—
—
-100
V
GS
= -10V
Q
g
Total Gate Charge
—
—
16
I
D
= 5.2A
Q
gs
Gate-to-Source Charge
—
—
2.9
nC
V
DS
= 160V
Q
gd
Gate-to-Drain ("Miller") Charge
—
—
9.6
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
—
4.2
—
V
DD
= 100V
t
r
Rise Time
—
31
—
I
D
= 5.2A
t
d(off)
Turn-Off Delay Time
—
18
—
R
G
= 9.0
Ω
t
f
Fall Time
—
17
—
R
D
= 20
Ω,
See Fig. 10
L
D
Internal Drain Inductance
—
4.5
—
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
—
7.5
—
from package
and center of
die contact
C
iss
Input Capacitance
—
360
—
V
GS
= 0V
C
oss
Output Capacitance
—
91
—
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
—
27
—
ƒ = 1.0MHz, See Fig. 5
IRL620S
Notes:
Parameter
Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
—
—
1.8
V
T
J
= 25°C, I
S
= 5.2A, V
GS
= 0V
t
rr
Reverse Recovery Time
—
180
270
ns
T
J
= 25°C, I
F
= 5.2A
Q
rr
Reverse RecoveryCharge
—
1.1
1.7
µC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 50V, starting T
J
= 25°C, L = 6.9mH
R
G
= 25
Ω
, I
AS
= 5.2A. (See Figure 12)
I
SD
≤
5.2A, di/dt
≤
95A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
—
—
21
—
—
5.2
A
ns
nA
Ω
µA
nH
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL620S
Fig 1. Typical Output Characteristics,
T
C
= 25
o
C
Fig 2. Typical Output Characteristics,
T
C
= 150
o
C
R
D
S
(o
n
)
,
D
ra
in
-t
o
-S
o
u
rc
e
O
n
R
e
s
is
ta
n
c
e
(N
o
rm
a
liz
e
d
)
I
D
,
D
ra
in
C
u
rr
e
n
t
(A
m
p
s
)
I
D
,
D
ra
in
C
u
rr
e
n
t
(A
m
p
s
)
I
D
,
D
ra
in
C
u
rr
e
n
t
(A
m
p
s
)
IRL620s
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
C
a
p
a
c
it
a
n
c
e
(
p
F
)
V
G
S
,
G
a
te
-t
o
-S
o
u
rc
e
V
o
lt
a
g
e
(
v
o
lt
s
)
I
S
D
,
R
e
v
e
rs
e
D
ra
in
C
u
rr
e
n
t
(A
m
p
s
)
I
D
,
D
ra
in
C
u
rr
e
n
t
(A
m
p
s
)
IRL620S
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
D
,
D
ra
in
C
u
rr
e
n
t
(A
m
p
s
)
IRL620S
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 13b. Gate Charge Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IRL620S
Fig 14. Peak Diode Recovery dv/dt Test Circuit
IRL620S
Package Outline SMD-220
Part Marking Information SMD-220
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39)
1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
IRL620S
Package Outline SMD-220 Tape and Reel