DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
235A
FAST RECOVERY DIODES
Stud Version
SD233N/R SERIES
Features
High power FAST recovery diode series
4.5 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
I
F(AV)
235
A
@ T
C
60
°C
I
F(RMS)
370
A
I
FSM
@
50Hz
5500
A
@ 60Hz
5760
A
I
2
t
@
50Hz
151
KA
2
s
@ 60Hz
138
KA
2
s
V
RRM
range
3000 to 4500
V
t
rr
4.5
µs
@ T
J
125
°C
T
J
-40 to 125
°C
Parameters
SD233N/R
Units
Major Ratings and Characteristics
case style
B-8
2222222222222
12
Voltage
V
RRM
max. repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
T
J
= 125°C
V
V
mA
30
3000
3100
36
3600
3700
40
4000
4100
45
4500
4600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD233N/R
50
I
F(AV)
Max. average forward current
235
A
180° conduction, half sine wave.
@ Case temperature
60
°C
I
F(RMS)
Max. RMS current
370
A
@ 45°C case temperature
I
FSM
Max. peak, one-cycle
5500
t = 10ms
No voltage
non-repetitive forward current
5760
t = 8.3ms
reapplied
4630
t = 10ms
50% V
RRM
4840
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
151
t = 10ms
No voltage
Initial T
J
= T
J
max.
138
t = 8.3ms
reapplied
107
t = 10ms
50% V
RRM
98
t = 8.3ms
reapplied
I
2
√
t
Maximum I
2
√
t for fusing
1510
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level of threshold voltage
1.56
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
V
F(TO)
2
High level of threshold voltage
1.68
(I >
π
x I
F(AV)
), T
J
= T
J
max.
r
f1
Low level of forward slope resistance
1.64
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
r
f2
High level of forward slope resistance
1.53
(I >
π
x I
F(AV)
), T
J
= T
J
max.
V
FM
Max. forward voltage
3.2
V
I
pk
= 1000A, T
J
= 125°C, t
p
= 400 µs square pulse
Parameter
SD233N/R
Units
Conditions
Forward Conduction
KA
2
s
A
m
Ω
V
Test conditions
Max. values @ T
J
= 125
°C
Code
(
µ
s)
(A)
(A/
µ
s)
(V)
(
µ
s)
(
µ
C)
(A)
Recovery Characteristics
S50
5.0
1000
100
- 50
4.5
680
240
(*) di/dt = 25A/us @ T
J
= 25°C
T
J
= 25
o
C
typical t
rr
I
pk
di/dt (*)
V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse
@ 25% I
RRM
Fig. 4 - Forward Power Loss Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 9 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Current Characteristics
Fig. 11 - Recovery Charge Characteristics
Fig. 10 - Recovery Time Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 16 - Frequency Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 18 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 13 - Maximum Total Energy Loss Per Pulse Characteristics
23
Thermal and Mechanical Specification
Parameter
SD233N/R
Units
Conditions
°C
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance, junction to case
0.1
DC operation
R
thCS
Max. thermal resistance, case to heatsink
0.04
Mounting surface, smooth, flat and greased
T
Mounting torque ± 10%
50
Not lubricated threads
wt
Approximate weight
454
g
Case style
B-8
See Outline Table
K/W
Nm
180°
0.010
0.008
T
J
= T
J
max.
120°
0.013
0.014
90°
0.017
0.018
K/W
60°
0.025
0.026
30°
0.041
0.042
Conduction angle
Sinusoidal conduction
Rectangular conduction Units
Conditions
∆
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
1
-
Diode
2
-
Essential part number
3
-
3 = Fast recovery
4
-
N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5
-
Voltage code: Code x 100 = V
RRM
(see Voltage Ratings table)
6
-
t
rr
code (see Recovery Characteristics table)
7
-
P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
8
-
7
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
T = Threaded Top Terminal 3/8" 24UNF-2A
None = Not isolated lead
9
-
C = Ceramic housing
5
1
2
3
4
SD
23
3
N
45 S50
P
S
C
7
6
8
9
Device Code
Ordering Information Table
2222222222222
12
Outlines Table
Case Style B-8
All dimensions in millimeters (inches)
Case Style B-8 with top thread terminal 3/8"
All dimensions in millimeters (inches)
26 (1.023) MAX.
10.5 (0.41) DIA.
12 (0.47) MIN.
38 (1.5)
DIA. MAX.
CERAMIC HOUSING
SW 45
C.S. 70mm
5(0.20) ± 0.3(0.01)
2
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.
38 (1.5)
DIA. MAX.
CERAMIC HOUSING
SW 45
3/4"-16UNF-2A *
3/8"-24UNF-2A
17 (0.67) DIA.
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.