DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
230A
PHASE CONTROL THYRISTORS
Stud Version
ST230S SERIES
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
230
A
@ T
C
85
°C
I
T(RMS)
360
A
I
TSM
@
50Hz
5700
A
@ 60Hz
5970
A
I
2
t
@
50Hz
163
KA
2
s
@ 60Hz
149
KA
2
s
V
DRM
/V
RRM
400 to 1600
V
t
q
typical
100
µs
T
J
- 40 to 125
°C
Parameters
ST230S
Units
Major Ratings and Characteristics
case style
TO-209AB (TO-93)
2222222222222
12
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
V
V
mA
04
400
500
08
800
900
ST230S
12
1200
1300
30
14
1400
1500
16
1600
1700
I
T(AV)
Max. average on-state current
230
A
180° conduction, half sine wave
@ Case temperature
85
°C
I
T(RMS)
Max. RMS on-state current
360
A
DC @ 78°C case temperature
I
TSM
Max. peak, one-cycle
5700
t = 10ms
No voltage
non-repetitive surge current
5970
t = 8.3ms
reapplied
4800
t = 10ms
100% V
RRM
5000
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
163
t = 10ms
No voltage
Initial T
J
= T
J
max.
148
t = 8.3ms
reapplied
115
t = 10ms
100% V
RRM
105
t = 8.3ms
reapplied
I
2
√
t
Maximum I
2
√
t for fusing
1630
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of on-state
slope resistance
r
t
2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.55
V
I
pk
= 720A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Max. (typical) latching current
1000 (300)
0.92
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.88
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.81
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST230S
Units Conditions
0.98
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
Ω
mA
T
J
= 25°C, anode supply 12V resistive load
A
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
Ω
, t
r
≤
1µs
of turned-on current
T
J
= T
J
max, anode voltage
≤
80%
V
DRM
Gate current 1A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 300A, T
J
= T
J
max, di/dt
= 20A/µs, V
R
= 50V
dv/dt
= 20V/µs, Gate 0V 100
Ω,
t
p
= 500µs
Parameter
ST230S
Units Conditions
1000
A/µs
Switching
t
q
Typical turn-off time
100
µs
t
d
Typical delay time
1.0
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 9 - Gate Characteristics
23
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500
V/
µs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST230S
Units Conditions
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, ± 10%
31
(275)
24.5
(210)
wt
Approximate weight
280
g
Case style
TO - 209AB (TO-93)
See Outline Table
Parameter
ST230S
Units
Conditions
0.10
DC operation
0.04
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
P
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
2.0
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
to trigger
mA
T
J
= 25°C
T
J
= 125°C
V
GT
DC gate voltage required
T
J
= - 40°C
to trigger
V
T
J
= 25°C
T
J
= 125°C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST230S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
V
T
J
= T
J
max, t
p
≤
5ms
°C
K/W
Nm
(lbf-in)
Non lubricated threads
Lubricated threads
2222222222222
12
∆
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Ordering Information Table
180°
0.016
0.012
T
J
= T
J
max.
120°
0.019
0.020
90°
0.025
0.027
K/W
60°
0.036
0.037
30°
0.060
0.060
Conduction angle
Sinusoidal conduction
Rectangular conduction Units
Conditions
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
S = Compression bonding Stud
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
P = Stud base 16UNF threads
M = Stud base metric threads (M16 x 1.5)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
8
-
V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
9
-
Critical dv/dt: None = 500V/µsec (Standard selection)
L
= 1000V/µsec (Special selection)
Device Code
5
1
2
3
4
ST
23
0
S
16
P
0
7
6
9
8
23
Fast-on Terminals
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
Outline Table
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
2
1
0
(
8
.2
6
)
1
0
(
0
.3
9
)
C.S. 0.4mm
(0.0006 s.i.)
3
8
.5
(
1
.5
2
)
M
A
X
.
+-
220 (8.66) 10 (0.39)
CERAMIC HOUSING
9
0
(
3
.5
4
)
M
IN
.
4.3 (0.17) DIA.
19 (0.75) MAX.
8.5 (0.33) DIA.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
C.S. 25mm
2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
2
2
(
0
.8
6
)
M
IN
.
M
A
X
.
35 (1.38) MAX.
3/4"-16UNF-2A *
2
7
.5
(
1
.0
8
)
SW 32
27.5 (1.08) MAX. DIA.
WHITE GATE
9
.5
(
0
.3
7
)
M
IN
.
1
6
(
0
.6
3
)
M
A
X
.
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
2
1
0
(
8
.2
6
)
1
0
(
0
.3
9
)
C.S. 0.4mm
(0.0006 s.i.)
M
A
X
.
9
0
(
3
.5
4
)
M
IN
.
4.3 (0.17) DIA.
19 (0.75) MAX.
3
8
.5
(
1
.5
2
)
M
A
X
.
1
6
(
0
.6
3
)
M
A
X
.
8.5 (0.33) DIA.
+-
GLASS METAL SEAL
28.5 (1.12) MAX. DIA.
220 (8.66) 10 (0.39)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
SW 32
C.S. 25mm
2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
2
2
(
0
.8
6
)
M
IN
.
35 (1.38) MAX.
3/4"-16UNF-2A *
2
7
.5
(
1
.0
8
)
9
.5
(
0.
3
7
)
M
IN
.
WHITE GATE
AMP. 280000-1
REF-250
2222222222222
12
Outline Table
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
CERAMIC HOUSING
2
7
.5
(
1
.0
8
)
M
A
X
.
3
8
.5
(
1
.5
2
)
M
A
X
.
3 (0.12)
8
0
(
3
.1
5
)
M
A
X
.
DIA. 27.5 (1.08) MAX.
1
6
(
0
.6
3
)
M
A
X
.
FLAG TERMINALS
1.5 (0.06) DIA.
SW 32
22 (0.89)
DIA. 6.5 (0.25)
1
3
(
0
.5
1
)
14 (0.55)
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3/4"-16UNF-2A*
GLASS-METAL SEAL
2
7
.5
(
1
.0
8
)
M
A
X
.
3
8
.5
(
1
.5
2
)
M
A
X
.
3 (0.12)
8
0
(
3
.1
5
)
M
A
X
.
DIA. 28.5 (1.12) MAX.
FLAG TERMINALS
1.5 (0.06) DIA.
SW 32
22 (0.89)
DIA. 6.5 (0.25)
1
3
(
0
.5
1
)
14 (0.55)
1
6
(
0
.6
3
)
M
A
X
.
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.