V
CC
V
B
CS
OUT
V
S
COM
IN
ERR
V
CC
IN
TO
LOAD
up to 500V
Features
n
Floating channel designed for bootstrap operation
Fully operational to +500V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 12 to 18V
n
Undervoltage lockout
n
Current detection and limiting loop to limit driven
power transistor current
n
Error lead indicates fault conditions and programs
shutdown time
n
Output in phase with input
Description
The IR2125 is a high voltage, high speed power
MOSFET and IGBT driver with over-current limit-
ing protection circuitry. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compat-
ible with standard CMOS or LSTTL outputs. The
output driver features a high pulse current buffer
stage designed for minimum driver cross-conduc-
tion. The protection circuitry detects over-current
in the driven power transistor and limits the gate
drive voltage. Cycle by cycle shutdown is pro-
grammed by an external capacitor which directly
controls the time interval between detection of the
over-current limiting conditions and latched shut-
Data Sheet No. PD-6.017D
IR2125
CURRENT LIMITING SINGLE CHANNEL DRIVER
Product Summary
V
OFFSET
500V max.
I
O
+/-
1A / 2A
V
OUT
12 - 18V
V
CSth
230 mV
t
on/off
(typ.)
150 & 150 ns
Package
Typical Connection
down. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high or
low side configuration which operates up to 500
volts.
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-107
IR2125
B-108 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
Parameter
Value
Symbol
Definition
Min.
Max.
Units
V
B
High Side Floating Supply Voltage
-0.3
525
V
S
High Side Floating Offset Voltage
V
B
- 25
V
B
+ 0.3
V
HO
High Side Floating Output Voltage
V
S
- 0.3
V
B
+ 0.3
V
CC
Logic Supply Voltage
-0.3
25
V
V
IN
Logic Input Voltage
-0.3
V
CC
+ 0.3
V
ERR
Error Signal Voltage
-0.3
V
CC
+ 0.3
V
CS
Current Sense Voltage
V
S
- 0.3
V
B
+ 0.3
dV
s
/dt
Allowable Offset Supply Voltage Transient
—
50
V/ns
P
D
Package Power Dissipation @ T
A
≤
+25°C
—
1.0
W
R
θ
JA
Thermal Resistance, Junction to Ambient
—
125
°C/W
T
J
Junction Temperature
—
150
T
S
Storage Temperature
-55
150
°C
T
L
Lead Temperature (Soldering, 10 seconds)
—
300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Parameter
Value
Symbol
Definition
Min.
Max.
Units
V
B
High Side Floating Supply Voltage
V
S
+ 12
V
S
+ 18
V
S
High Side Floating Offset Voltage
Note 1
500
V
HO
High Side Floating Output Voltage
V
S
V
B
V
CC
Logic Supply Voltage
0
18
V
V
IN
Logic Input Voltage
0
V
CC
V
ERR
Error Signal Voltage
0
V
CC
V
CS
Current Sense Signal Voltage
V
S
V
B
T
A
Ambient Temperature
-40
125
°C
Note 1: Logic operational for V
S
of -5 to +500V. Logic state held for V
S
of -5V to -V
BS
.
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
IR2125
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-109
Parameter
Value
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
V
IH
Logic “1” Input Voltage
14
2.2
—
—
V
CC
= 12V to 18V
V
IL
Logic “0” Input Voltage
15
—
—
0.8
V
CC
= 12V to 18V
V
CSTH+
CS Input Positive Going Threshold
16
150
230
320
V
CC
= 12V to 18V
V
CSTH-
CS Input Negative Going Threshold
17
130
200
260
V
CC
= 12V to 18V
V
OH
High Level Output Voltage, V
BIAS
- V
O
18
—
—
100
I
O
= 0A
V
OL
Low Level Output Voltage, V
O
19
—
—
100
I
O
= 0A
I
LK
Offset Supply Leakage Current
20
—
—
50
V
B
= V
S
= 500V
I
QBS
Quiescent V
BS
Supply Current
21
—
400
1000
V
IN
= V
CS
= 0V or 5V
I
QCC
Quiescent V
CC
Supply Current
22
—
700
1200
V
IN
= V
CS
= 0V or 5V
I
IN+
Logic “1” Input Bias Current
23
—
4.5
10
µA
V
IN
= 5V
I
IN-
Logic “0” Input Bias Current
24
—
—
1.0
V
IN
= 0V
I
CS+
“High” CS Bias Current
25
—
4.5
10
V
CS
= 3V
I
CS-
“Low” CS Bias Current
26
—
—
1.0
V
CS
= 0V
V
BSUV+
V
BS
Supply Undervoltage Positive Going
27
8.5
9.2
10.0
Threshold
V
BSUV-
V
BS
Supply Undervoltage Negative Going
28
7.7
8.3
9.0
Threshold
V
CCUV+
V
CC
Supply Undervoltage Positive Going
29
8.3
8.9
9.6
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going
30
7.3
8.0
8.7
Threshold
I
ERR
ERR Timing Charge Current
31
65
100
130
V
IN
= 5V, V
CS
= 3V
ERR < V
ERR+
I
ERR+
ERR Pull-Up Current
32
8.0
15
—
V
IN
= 5V, V
CS
= 3V
ERR > V
ERR+
I
ERR-
ERR Pull-Down Current
33
16
30
—
V
IN
= 0V
I
O+
Output High Short Circuit Pulsed Current
34
1.0
1.6
—
V
O
= 0V, V
IN
= 5V
PW
≤
10 µs
I
O-
Output Low Short Circuit Pulsed Current
35
2.0
3.3
—
V
O
= 15V, V
IN
= 0V
PW
≤
10 µs
Parameter
Value
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
t
on
Turn-On Propagation Delay
7
—
150
200
t
off
Turn-Off Propagation Delay
8
—
150
190
t
sd
ERR Shutdown Propagation Delay
9
—
1.7
2.2
µs
t
r
Turn-On Rise Time
10
—
43
60
t
f
Turn-Off Fall Time
11
—
26
35
t
cs
CS Shutdown Propagation Delay
12
—
0.7
1.2
t
err
CS to ERR Pull-Up Propagation Delay
13
—
9.0
12
C
ERR
= 270 pF
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 3300 pF and T
A
= 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figures 3 through 6.
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to V
S
.
ns
ns
µs
V
mV
A
mA
V
µA
IR2125
B-110 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
DOWN
SHIFTERS
Q
R
UV
DETECT
ERROR
TIMING
PULSE
GEN
UV
DETECT
PULSE
FILTER
PRE
DRIVER
PULSE
GEN
500ns
BLANK
COMPARATOR
BUFFER
0.23V
HV
LEVEL
V
B
HO
V
S
CS
R
S
R
Q
V
CC
IN
UP
SHIFTERS
COM
ERR
LATCHED
SHUTDOWN
1.8V
1.8V
AMPLIFER
-
+
PULSE
FILTER
V
B
S
SHIFT
HV
LEVEL
SHIFT
Lead Definitions
Lead
Symbol
Description
V
CC
Logic and gate drive supply
IN
Logic input for gate driver output (HO), in phase with HO
ERR
Serves multiple functions; status reporting, linear mode timing and cycle by cycle logic
shutdown
COM
Logic ground
V
B
High side floating supply
HO
High side gate drive output
V
S
High side floating supply return
CS
Current sense input to current sense comparator
Functional Block Diagram
8 Lead DIP
IR2125
Part Number
Lead Assignments
IR2125
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-111
Thickness of Gate Oxide
800
Å
Connections
Material
Poly Silicon
First
Width
4 µm
Layer
Spacing
6 µm
Thickness
5000Å
Material
Al - Si (Si: 1.0% ±0.1%)
Second
Width
6 µm
Layer
Spacing
9 µm
Thickness
20,000Å
Contact Hole Dimension
8 µm X 8 µm
Insulation Layer
Material
PSG (SiO
2
)
Thickness
1.5 µm
Passivation
Material
PSG (SiO
2
)
(1)
Thickness
1.5 µm
Passivation
Material
Proprietary*
(2)
Thickness
Proprietary*
Method of Saw
Full Cut
Method of Die Bond
Ablebond 84 - 1
Wire Bond
Method
Thermo Sonic
Material
Au (1.0 mil / 1.3 mil)
Leadframe
Material
Cu
Die Area
Ag
Lead Plating
Pb : Sn (37 : 63)
Package
Types
8 Lead PDIP
Materials
EME6300 / MP150 / MP190
Remarks:
* Patent Pending
Device Information
Process & Design Rule
HVDCMOS 4.0 µm
Transistor Count
410
Die Size
104 X 111 X 26 (mil)
Die Outline
IR2125
B-112 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
Figure 3. Switching Time Waveform Definitions
Figure 4. ERR Shutdown Waveform Definitions
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
Figure 5. CS Shutdown Waveform Definitions
Figure 6. CS to ERR Waveform Definitions
4
HV = 10 to 500V
≤
50 V/ns
CS
tcs
HO
50%
90%
CS
terr
ERR
50%
50%
1.8V
dt
dt
C
dV
I
C
1.8V
100 uA
ERR
= ×
= ×
CS
tcs
OUT
50%
90%
IN
tr
ton
tf
toff
HO
50%
50%
90%
90%
10%
10%
ERR
CS
IN
HO
IR2125
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-113
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (°C)
ERR to Output Shutdown Delay Time (µ
s)
Max.
Typ.
0
100
200
300
400
500
-50
-25
0
25
50
75
100
125
Temperature (°C)
T
urn-Off Delay Time (n
s)
Max.
Typ.
0
100
200
300
400
500
-50
-25
0
25
50
75
100
125
Temperature (°C)
T
urn-On Delay Time (n
s)
Max.
Typ.
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
Figure 9B. ERR to Output Shutdown vs. Voltage
Figure 9A. ERR to Output Shutdown vs. Temperature
0
100
200
300
400
500
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
T
urn-On Time (n
s)
Max.
Typ.
0
100
200
300
400
500
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
T
urn-Off Time (ns
)
Max.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
ERR to Output Shutdown Delay Time (µ
s)
Max.
Typ.
IR2125
B-114 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
0.00
0.40
0.80
1.20
1.60
2.00
-50
-25
0
25
50
75
100
125
Temperature (°C)
C
S to Output Shutdown Delay Time (µ
s)
Max.
Typ.
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125
Temperature (°C)
T
urn-On Rise Time (n
s)
Max.
Typ.
Figure 11A. Turn-Off Fall Time vs. Temperature
Figure 11B. Turn-Off Fall Time vs. Voltage
Figure 10A. Turn-On Rise Time vs. Temperature
Figure 10B. Turn-On Rise Time vs. Voltage
Figure 12A. CS to Output Shutdown vs. Temperature
Figure 12B. CS to Output Shutdown vs. Voltage
0
20
40
60
80
100
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Turn-On Rise Time (n
s)
Max.
Typ.
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125
Temperature (°C)
T
urn-Off Fall Time (ns
)
Max.
Typ.
0
20
40
60
80
100
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
T
urn-Off Fall Time (ns
)
Max.
Typ.
0.00
0.40
0.80
1.20
1.60
2.00
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
C
S to Output Shutdown Delay Time (µ
s)
Max.
Typ.
IR2125
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-115
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (°C)
Logic "1"