Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Reverse Voltage
BAW75
V
R
25
V
BAW76
50
Peak Reverse Voltage
BAW75
V
RM
35
V
BAW76
75
Rectified Current (Average)
Half Wave Rectification with Resistive Load
I
O
150
(1)
mA
at T
A
= 25°C and f
≥
50 Hz
Surge Forward Current at t < 1µs, T
j
= 25°C
I
FSM
2
A
Power Dissipation at T
A
= 25°C
P
tot
500
(1)
mW
Thermal Resistance Junction to Ambient Air
R
Θ
JA
0.35
(1)
°C/W
Junction Temperature
T
j
200
°C
Storage Temperature Range
T
S
–65 to +200
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
BAW75 and BAW76
Small-Signal Diodes
5/2/00
Features
• Silicon Epitaxial Planar Diodes
• Fast switching diodes.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
New Product
DO-204AH (DO-35 Glass)
Dimensions in inches and (millimeters)
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage
BAW75
V
F
at I
F
= 30mA
—
—
1
V
BAW76
at I
F
= 100mA
—
—
1
BAW75
V
R
= 25V
—
—
100
nA
Leakage Current
BAW75
I
R
V
R
= 25V, T
j
= 150°C
—
—
100
µ
A
BAW76
V
R
= 50V
—
—
100
nA
BAW76
V
R
= 50V, T
j
= 150°C
—
—
100
µ
A
Reverse Breakdown Voltage
BAW75
V
(BR)R
tested with 5µA pulses
35
—
—
V
BAW76
75
—
—
Capacitance
BAW75
C
tot
V
F
= V
R
= 0V
—
—
4
pF
BAW76
—
—
2
I
F
= 10mA, I
R
= 10mA
—
—
4
Reverse Recovery Time
t
rr
I
rr
= 1mA
ns
I
F
= 10mA, I
R
= 1mA
—
—
2
V
R
= 6V, R
L
= 100
Ω
BAW75 and BAW76
Small-Signal Diodes
