FEATURES
♦
Silicon Planar Power Zener Diodes
♦
The Zener voltages are graded according to
the international E 24 standard. Standard Zener
voltage tolerance is ±5%. Replace suffix “C” with
“B” for ±2% tolerance. Other voltage tolerances and
other Zener voltages are available upon request.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance
R
thJA
–
–
300
(1)
°C/W
Junction to Ambient Air
Forward Voltage
V
F
–
–
1.0
Volts
at I
F
= 100 mA
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
BZX55-C0V8 THRU BZX55-C75
ZENER DIODES
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.5)
max
. .
150 (
3.8)
max.
∅
Cathode
.020 (0.52)
Mark
max.
∅
.079 (2.0)
DO-35
Dimensions are in inches and (millimeters)
12/10/98
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C
P
tot
500
(1)
mW
Junction Temperature
T
j
175
°C
Storage Temperature Range
T
S
– 55 to +175
°C
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
BZX55 – C0V8
(3)
0.73 … 0.83
< 8
< 600
– 0.25
–
–
–
–
–
BZX55 – C2V7
2.5 … 2.9
< 85
< 600
– 0.08
– 0.06
< 10000
< 50
1
135
BZX55 – C3V0
2.8 … 3.2
< 85
< 600
– 0.08
– 0.06
< 4000
< 40
1
125
BZX55 – C3V3
3.1 … 3.5
< 85
< 600
– 0.08
– 0.05
< 2000
< 40
1
115
BZX55 – C3V6
3.4 … 3.9
< 85
< 600
– 0.08
– 0.04
< 2000
< 40
1
105
BZX55 – C3V9
3.7 … 4.1
< 85
< 600
– 0.07
– 0.03
< 2000
< 40
1
95
BZX55 – C4V3
4.0 … 4.6
< 75
< 600
– 0.04
– 0.01
< 1000
< 20
1
90
BZX55 – C4V7
4.4 … 5.0
< 60
< 600
– 0.03
+0.01
< 500
< 10
1
85
BZX55 – C5V1
4.8 … 5.4
< 35
< 550
– 0.02
+0.05
< 100
< 2
1
80
BZX55 – C5V6
5.2 … 6.0
< 25
< 450
– 0.01
+0.06
< 100
< 2
1
70
BZX55 – C6V2
5.8 … 6.6
< 10
< 200
0
+0.07
< 100
< 2
2
64
BZX55 – C6V8
6.4 … 7.2
< 8
< 150
+0.01
+0.08
< 100
< 2
3
58
BZX55 – C7V5
7.0 … 7.9
< 7
< 50
+0.01
+0.09
< 100
< 2
5
53
BZX55 – C8V2
7.7 … 8.7
< 7
< 50
+0.01
+0.09
< 100
< 2
6
47
BZX55 – C9V1
8.5 … 9.6
< 10
< 50
+0.02
+0.10
< 100
< 2
7
43
BZX55 – C10
9.4 … 10.6
< 15
< 70
+0.03
+0.11
< 100
< 2
7.5
40
BZX55 – C11
10.4 … 11.6
< 20
< 70
+0.03
+0.11
< 100
< 2
8.5
36
BZX55 – C12
11.4 … 12.7
< 20
< 90
+0.03
+0.11
< 100
< 2
9
32
BZX55 – C13
12.4 … 14.1
< 26
< 110
+0.03
+0.11
< 100
< 2
10
29
BZX55 – C15
13.8 … 15.6
< 30
< 110
+0.03
+0.11
< 100
< 2
11
27
BZX55 – C16
15.3 … 17.1
< 40
< 170
+0.03
+0.11
< 100
< 2
12
24
BZX55 – C18
16.8 … 19.1
< 50
< 170
+0.03
+0.11
< 100
< 2
14
21
BZX55 – C20
18.8 … 21.2
< 55
< 220
+0.03
+0.11
< 100
< 2
15
20
BZX55 – C22
20.8 … 23.3
< 55
< 220
+0.03
+0.11
< 100
< 2
17
18
BZX55 – C24
22.8 … 25.6
< 80
< 220
+0.04
+0.12
< 100
< 2
18
16
BZX55 – C27
25.1 … 28.9
< 80
< 220
+0.04
+0.12
< 100
< 2
20
14
BZX55 – C30
28 … 32
< 80
< 220
+0.04
+0.12
< 100
< 2
22
13
BZX55 – C33
31 … 35
< 80
< 220
+0.04
+0.12
< 100
< 2
24
12
BZX55 – C36
34 … 38
< 80
< 220
+0.04
+0.12
< 100
< 2
27
11
BZX55 – C39
37 … 41
(4)
< 90
(4)
< 500
(5)
+0.04
+0.12
< 100
< 5
28
10
BZX55 – C43
40 … 46
(4)
< 90
(4)
< 600
(5)
+0.04
+0.12
< 100
< 5
32
9.2
BZX55 – C47
44 … 50
(4)
< 110
(4)
< 700
(5)
+0.04
+0.12
< 100
< 5
35
8.5
BZX55 – C51
48 … 54
(4)
< 125
(4)
< 700
(5)
+0.04
+0.12
< 100
< 10
38
7.8
BZX55-C56
52.0 … 60.0
(4)
< 135
(4)
< 1000
(5)
typ. +0.1
(4)
< 100
< 10
42
7.0
BZX55-C62
58.0 … 66.0
(4)
< 150
(4)
< 1000
(5)
typ. +0.1
(4)
< 100
< 10
47
6.4
BZX55-C68
64.0 … 72.0
(4)
< 200
(4)
< 1000
(5)
typ. +0.1
(4)
< 100
< 10
51
5.9
BZX55-C75
70.0 … 79.0
(4)
< 250
(4)
< 1000
(5)
typ. +0.1
(4)
< 100
< 10
56
5.3
BZX55-C0V8 THRU BZX55-C75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Type
Zener Voltage
range
(1)
at
I
Z
= 5 mA
V
Z
V
at
I
Z
= 5 mA
f = 1 kHz
r
zj
Ω
Dynamic resistance
Temp. coefficient
of Zener Voltage
at
I
Z
= 5 mA
α
V
Z
%/K
at
I
Z
= 1mA
f = 1 kHz
r
zj
Ω
min
max
I
R
nA
I
R
µ
A
at
V
R
V
Admissible
Zener
current
(2)
I
ZM
mA
Reverse leakage current
at
T
amb
=
150°C
at
T
amb
=
25°C
NOTES:
(1) Tested with pulses t
p
= 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
(3) The BZX55–C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”.
Connect the cathode lead to the negative pole
(4) at I
Z
= 2.5 mA
(5) at I
Z
= 0.5 mA
