DATA SHEET
Product specification
Supersedes data of 1996 Apr 26
1999 May 21
DISCRETE SEMICONDUCTORS
BZV55 series
Voltage regulator diodes
1/3 page (Datasheet)
M3D054
1999 May 21
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
FEATURES
•
Total power dissipation:
max. 500 mW
•
Two tolerance series:
±
2% and
approx.
±
5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass
SOD80C SMD packages. The diodes are available in the normalized E24
±
2%
(BZV55-B) and approx.
±
5% (BZV55-C) tolerance range. The series consists of
37 types with nominal working voltages from 2.4 to 75 V.
Fig.1 Simplified outline (SOD80C) and symbol.
The cathode is indicated by a yellow band.
handbook, 4 columns
MAM215
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a ceramic substrate of 10
×
10
×
0.6 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
−
250
mA
I
ZSM
non-repetitive peak reverse current
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge
see Tables
1 and 2
P
tot
total power dissipation
T
amb
≤
50
°
C; note 1
−
400
mW
tie-point
≤
50
°
C; note 1
−
500
mW
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.3
−
40
W
T
stg
storage temperature
−
65
+200
°
C
T
j
junction temperature
−
65
+200
°
C
1999 May 21
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
ELECTRICAL CHARACTERISTICS
Total BZV55-B and C series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.4
0.9
V
I
R
reverse current
BZV55-B/C2V4
V
R
= 1 V
50
µ
A
BZV55-B/C2V7
V
R
= 1 V
20
µ
A
BZV55-B/C3V0
V
R
= 1 V
10
µ
A
BZV55-B/C3V3
V
R
= 1 V
5
µ
A
BZV55-B/C3V6
V
R
= 1 V
5
µ
A
BZV55-B/C3V9
V
R
= 1 V
3
µ
A
BZV55-B/C4V3
V
R
= 1 V
3
µ
A
BZV55-B/C4V7
V
R
= 2 V
3
µ
A
BZV55-B/C5V1
V
R
= 2 V
2
µ
A
BZV55-B/C5V6
V
R
= 2 V
1
µ
A
BZV55-B/C6V2
V
R
= 4 V
3
µ
A
BZV55-B/C6V8
V
R
= 4 V
2
µ
A
BZV55-B/C7V5
V
R
= 5 V
1
µ
A
BZV55-B/C8V2
V
R
= 5 V
700
nA
BZV55-B/C9V1
V
R
= 6 V
500
nA
BZV55-B/C10
V
R
= 7 V
200
nA
BZV55-B/C11
V
R
= 8 V
100
nA
BZV55-B/C12
V
R
= 8 V
100
nA
BZV55-B/C13
V
R
= 8 V
100
nA
BZV55-B/C15 to 75
V
R
= 0.7V
Znom
50
nA
1999
May
21
4
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZV55 series
Table 1
Per type BZV55-B/C2V4 to B/C24
T
j
= 25
°
C unless otherwise specified.
BZV55-B
or C
XXX
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
DIFFERENTIAL RESISTANCE
r
dif
(
Ω
)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s;
T
amb
= 25
°
C
Tol.
±
2% (B)
Tol. approx.
±
5% (C)
at
I
Ztest
= 1 mA
at
I
Ztest
= 5 mA
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
2V4
2.35
2.45
2.2
2.6
275
600
70
100
−
3.5
−
1.6
0
450
6.0
2V7
2.65
2.75
2.5
2.9
300
600
75
100
−
3.5
−
2.0
0
450
6.0
3V0
2.94
3.06
2.8
3.2
325
600
80
95
−
3.5
−
2.1
0
450
6.0
3V3
3.23
3.37
3.1
3.5
350
600
85
95
−
3.5
−
2.4
0
450
6.0
3V6
3.53
3.67
3.4
3.8
375
600
85
90
−
3.5
−
2.4
0
450
6.0
3V9
3.82
3.98
3.7
4.1
400
600
85
90
−
3.5
−
2.5
0
450
6.0
4V3
4.21
4.39
4.0
4.6
410
600
80
90
−
3.5
−
2.5
0
450
6.0
4V7
4.61
4.79
4.4
5.0
425
500
50
80
−
3.5
−
1.4
0.2
300
6.0
5V1
5.00
5.20
4.8
5.4
400
480
40
60
−
2.7
−
0.8
1.2
300
6.0
5V6
5.49
5.71
5.2
6.0
80
400
15
40
−
2.0
1.2
2.5
300
6.0
6V2
6.08
6.32
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.66
6.94
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.35
7.65
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.04
8.36
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.92
9.28
8.5
9.6
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.80
10.20
9.4
10.6
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.80
11.20
10.4
11.6
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.80
12.20
11.4
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.70
13.30
12.4
14.1
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.70
15.30
13.8
15.6
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.70
16.30
15.3
17.1
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.60
18.40
16.8
19.1
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.60
20.40
18.8
21.2
60
225
15
55
14.4
16.4
18.0
60
1.5
22
21.60
22.40
20.8
23.3
60
250
20
55
16.4
18.4
20.0
60
1.25
24
23.50
24.50
22.8
25.6
60
250
25
70
18.4
20.4
22.0
55
1.25
1999
May
21
5
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZV55 series
Table 2
Per type BZV55-B/C27 to B/C75
T
j
= 25
°
C unless otherwise specified.
BZV55-B
or C
XXX
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
DIFFERENTIAL RESISTANCE
r
dif
(
Ω
)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s;
T
amb
= 25
°
C
Tol.
±
2% (B)
Tol. approx.
±
5% (C)
at
I
Ztest
= 0.5 mA
at
I
Ztest
= 2 mA
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
27
26.50
27.50
25.1
28.9
65
300
25
80
21.4
23.4
25.3
50
1.0
30
29.40
30.60
28.0
32.0
70
300
30
80
24.4
26.6
29.4
50
1.0
33
32.30
33.70
31.0
35.0
75
325
35
80
27.4
29.7
33.4
45
0.9
36
35.30
36.70
34.0
38.0
80
350
35
90
30.4
33.0
37.4
45
0.8
39
38.20
39.80
37.0
41.0
80
350
40
130
33.4
36.4
41.2
45
0.7
43
42.10
43.90
40.0
46.0
85
375
45
150
37.6
41.2
46.6
40
0.6
47
46.10
47.90
44.0
50.0
85
375
50
170
42.0
46.1
51.8
40
0.5
51
50.00
52.00
48.0
54.0
90
400
60
180
46.6
51.0
57.2
40
0.4
56
54.90
57.10
52.0
60.0
100
425
70
200
52.2
57.0
63.8
40
0.3
62
60.80
63.20
58.0
66.0
120
450
80
215
58.8
64.4
71.6
35
0.3
68
66.60
69.40
64.0
72.0
150
475
90
240
65.6
71.7
79.8
35
0.25
75
73.50
76.50
70.0
79.0
170
500
95
255
73.4
80.2
88.6
35
0.2
1999 May 21
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate of 10
×
10
×
0.6 mm.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
300
K/W
R
th j-a
thermal resistance from junction to ambient
see Fig.2 and note 1
380
K/W
GRAPHICAL DATA
handbook, full pagewidth
10
−
1
1
10
10
2
10
3
10
4
10
5
MBG930
10
2
10
1
10
3
tp (ms)
tp
tp
T
T
δ
=
0.02
0.01
≤
0.001
0.75
0.50
0.33
0.20
0.10
0.05
δ
= 1
Rth j-a
(K/W)
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1999 May 21
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
Fig.3
Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
handbook, halfpage
MBG801
10
3
1
duration (ms)
PZSM
(W)
10
10
2
10
−
1
10
1
(1)
(2)
(1) T
j
= 25
°
C (prior to surge).
(2) T
j
= 150
°
C (prior to surge).
Fig.4
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6
1.0
300
100
0
200
MBG781
0.8
VF (V)
IF
(mA)
T
j
= 25
°
C.
Fig.5
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
0
60
0
−
2
−
3
−
1
MBG783
20
40
IZ (mA)
SZ
(mV/K)
4V3
3V9
3V6
3V0
2V4
2V7
3V3
BZV55-B/C2V4 to B/C4V3.
T
j
= 25 to 150
°
C.
Fig.6
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
0
20
16
10
0
−
5
5
MBG782
4
8
12
IZ (mA)
SZ
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
BZV55-B/C4V7 to B/C12.
T
j
= 25 to 150
°
C.
1999 May 21
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
Note
1. The marking band indicates the cathode.
SOD80C
100H01
97-06-20
Hermetically sealed glass surface mounted package; 2 connectors
SOD80C
UNIT
D
mm