P-TO220-3-1
P-TO252-3-1
P-TO263-3-1
Low-Drop Voltage Regulator
TLE 4274
Semiconductor Group
1
1998-11-01
Features
• Output voltage tolerance
≤
±
4 %
• Low-drop voltage
• Very low current consumption
• Short-circuit proof
• Reverse polarity proof
• Suitable for use in automotive electronics
SMD = Surface Mounted Device
Functional Description
The TLE 4274 is a low-drop voltage regulator in a
TO220 package. The IC regulates an input voltage up
to 40 V to
V
Qrated
= 5.0 V (V50), 8.5 V (V85) and 10 V
(V10). The maximum output current is 400 mA. The IC
is short-circuit proof and incorporates temperature
protection that disables the IC at over temperature.
Type
Ordering Code
Package
TLE 4274 V10
Q67000-A9258
P-TO220-3-1
TLE 4274 V85
Q67000-A9257
P-TO220-3-1
TLE 4274 V50
Q67000-A9256
P-TO220-3-1
TLE 4274 D V50
Q67006-A9331
P-TO252-3-1
TLE 4274 G V10
Q67006-A9261
P-TO263-3-1
TLE 4274 G V50
Q67006-A9259
P-TO263-3-1
TLE 4274 G V85
Q67006-A9260
P-TO263-3-1
Dimensioning Information on External Components
The input capacitor
C
I
is necessary for compensating line influences. Using a resistor of
approx. 1
Ω
in series with
C
I
, the oscillating of input inductivity and input capacitance can
be damped. The output capacitor
C
Q
is necessary for the stability of the regulation circuit.
Stability is guaranteed at values
C
Q
≥
22
µ
F and an ESR of
≤
3
Ω
within the operating
temperature range.
TLE 4274
Semiconductor Group
2
1998-11-01
Circuit Description
The control amplifier compares a reference voltage to a voltage that is proportional to the
output voltage and drives the base of the series transistor via a buffer. Saturation control
as a function of the load current prevents any oversaturation of the power element. The
IC also incorporates a number of internal circuits for protection against:
• Overload
• Overtemperature
• Reverse polarity
Pin Configuration (top view)
Figure 1
Pin Definitions and Functions
Pin No.
Symbol
Function
1
I
Input; block to ground directly at the IC with a ceramic
capacitor.
2
GND
Ground
3
Q
Output; block to ground with a
≥
22
µ
F capacitor.
GND
AEP01957
Ι
Q
P-TO220-3-1
P-TO263-3-1
GND
Ι
Q
AEP02281
P-TO252-3-1
AEP02512
Ι
GND
Q
TLE 4274
Semiconductor Group
3
1998-11-01
Figure 2
Block Diagram
Ι
1
AEB01959
GND
2
Q
3
Bandgap
Reference
Control
Amplifier
Sensor
Temperature
Buffer
Saturation
Control and
Protection
Circuit
TLE 4274
Semiconductor Group
4
1998-11-01
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the integrated circuit.
Absolute Maximum Ratings
T
j
= – 40 to 150
°
C
Parameter
Symbol
Limit Values
Unit Test Condition
min.
max.
Voltage Regulator
Input
Voltage
V
I
– 42
45
V
–
Current
I
I
–
–
–
Internally limited
Output
Voltage
V
Q
– 1.0
40
V
–
Current
I
Q
–
–
–
Internally limited
Ground
Current
I
GND
–
100
mA
–
Temperature
Junction temperature
T
j
–
150
°
C
–
Storage temperature
T
stg
– 50
150
°
C
–
Operating Range
Parameter
Symbol
Limit Values
Unit Remarks
min.
max.
Input voltage
V
I
5.5
9.0/10.5
40
40/40
V
V50
V85/V10
Junction temperature
T
j
– 40
150
°
C
–
Thermal Resistance
Junction ambient
R
thja
–
65
K/W TO220
Junction ambient
R
thja
–
70
K/W TO252
1)
, TO263
1)
Soldered in, min. footprint
Junction case
R
thjc
–
4
K/W –
TLE 4274
Semiconductor Group
5
1998-11-01
Characteristics
V
I
= 13.5 V; – 40
°
C <
T
j
< 150
°
C (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit
Measuring Conditions
min.
typ.
max.
Output voltage
V50-Version
V
Q
4.8
5
5.2
V
5 mA <
I
Q
< 400 mA
6 V <
V
I
< 40 V
Output voltage
V85-Version
V
Q
8.16
8.5
8.84
V
5 mA <
I
Q
< 400 mA
9.5 V <
V
I
< 40 V
Output voltage
V10-Version
V
Q
9.6
10
10.4
V
5 mA <
I
Q
< 400 mA
11 V <
V
I
< 40 V
Output current
limitation
1)
I
Q
400
600
–
mA
–
Current
consumption;
I
q
=
I
I
–
I
Q
I
q
–
100
220
µ
A
I
Q
= 1 mA
Current
consumption;
I
q
=
I
I
–
I
Q
I
q
I
q
–
–
8
20
15
30
mA
mA
I
Q
= 250 mA
I
Q
= 400 mA
Drop voltage
1)
V
dr
–
250
500
mV
I
Q
= 250 mA
V
dr
=
V
I
–
V
Q
Load regulation
∆
V
Q
–
20
50
mV
I
Q
= 5 mA to
400 mA
Line regulation
∆
V
Q
–
10
25
mV
∆
V
l
= 12 V to 32 V
I
Q
= 5 mA
Power supply
ripple rejection
PSRR
–
60
–
dB
f
r
= 100 Hz;
V
r
= 0.5
V
SS
Temperature
output voltage
drift
–
0.5
–
mV/K –
1)
Measured when the output voltage
V
Q
has dropped 100 mV from the nominal value obtained at
V
I
= 13.5 V.
dV
Q
dT
-----------
TLE 4274
Semiconductor Group
6
1998-11-01
Figure 3
Measuring Circuit
Figure 4
Application Circuit
TLE 4274
Input
Ι
100 nF
µ
100 F
V
Ι
C
Ι
Ι
2
1
C
22 F
µ
Q
3
Q
Ι
AES01960
V
Q
R
L
Output
TLE 4274
C
Input
Ι
1
2
AES01961
C
3
Q
Output
TLE 4274
Semiconductor Group
7
1998-11-01
Drop Voltage
V
dr
versus
Output Current
I
Q
Current Consumption
I
q
versus
Output Current
I
Q
(high load)
Output Current
I
Q
versus
Input Voltage
V
I
Current Consumption
I
q
versus
Output Current
I
Q
(low load)
Typical Performance Characteristics (V50, V85 and V10):
0
0
100
400
600
200
V
dr
mV
400
200
Ι
Q
mA
AED01962
j
T = 25 C
V
dr
=
QNOM-0.1 V
V
j
T = 125 C
300
100
300
0
0
200
40
60
20
mA
600
400
Ι
Q
mA
AED02267
V
Ι
q
Ι
= 13.5 V
T = 25 C
j
100
300
10
30
20
0
10
0
mA
800
Q
Ι
= 25 C
T
j
50
V
30
40
V
Ι
AED01963
200
400
600
= 0 V
V
Q
30
0
0
10
20
mA
40
60
Q
Ι
0.1
0.2
0.3
mA
0.6
0.4
Ι
q
AED02268
T
V
= 25 C
= 13.5 V
Ι
j
TLE 4274
Semiconductor Group
8
1998-11-01
Output Voltage
V
Q
versus
Junction Temperature
T
j
Output Voltage
V
Q
versus
Input Voltage
V
I
Current Consumption
I
q
versus
Input Voltage
V
I
Input Current
I
I
versus
Input Voltage
V
I
Typical Performance Characteristics (V50):
4.90
4.80
4.70
40
-40
0
4.60
5.00
V
5.20
5.10
Q
160
C
80
120
T
j
AED01966
V
Ι
= 13.5 V
V
3
2
1
4
0
2
0
4
V
6
5
Q
10
6
8
V
Ι
AED01968
V
V
V
Q
V
Ι
V
Q
=
= 20
= 25 C
R
L
j
T
Ω
0
0
20
30
10
mA
50
AED02269
q
Ι
10
20
30
V
R
L
= 20
Ω
V
Ι
T
j
= 25 C
0
1.5
1.0
0.5
-50
-25
-2
0
mA
3.5
3.0
2.5
2.0
Ι
Ι
T
R
j
L
= 25 C
Ω
= 10 k
V
25
50
V
Ι
AED01977
TLE 4274
Semiconductor Group
9
1998-11-01
Output Voltage
V
Q
versus
Junction Temperature
T
j
Output Voltage
V
Q
versus
Input Voltage
V
I
Current Consumption
I
q
versus
Input Voltage
V
I
Input Current
I
I
versus
Input Voltage
V
I
Typical Performance Characteristics for V85:
7.5
8.0
0
-40
40
9.0
8.5
Q
V
= 13.5 V
V
Ι
V
120
80
C 160
T
j
AED01970
6
4
0
8
0
2
4
R
T
Q
V
Q
V
8
Ι
= V
V
10
12
V
16
12
20
V
Ι
= 25 C
= 34
L
j
Ω
AED01972
Q
V
0
0
20
30
10
mA
50
AED02270
q
Ι
10
20
30
V
R
L
= 20
Ω
V
Ι
T
j
= 25 C
0
1.5
1.0
0.5
-50
-25
-2
0
mA
3.5
3.0
2.5
2.0
Ι
Ι
T
R
j
L
= 25 C
Ω
= 8.5 k
V
25
50
V
Ι
AED01973
TLE 4274
Semiconductor Group
10
1998-11-01
Output Voltage
V
Q
versus
Junction Temperature
T
j
Output Voltage
V
Q
versus
Input Voltage
V
I
Current Consumption
I
q
versus
Input Voltage
V
I
Input Current
I
I
versus
Input Voltage
V
I
Typical Performance Characteristics for V10:
9.0
9.5
0
-40
40
10.5
10.0
Q
V
= 13.5 V
V
Ι
V
120
80
C 160
T
j
AED01974
6
4
0
8
0
2
4
R
T
Q
V
Q
V
8
Ι
= V
V
10
12
V
16
12
20
V
Ι
= 25 C
= 34
L
j
Ω
AED01976
Q
V
0
0
20
30
10
mA
50
AED02270
q
Ι
10
20
30
V
R
L
= 20
Ω
V
Ι
T
j
= 25 C
0
1.5
1.0
0.5
-50
-25
-2
0
mA
3.5
3.0
2.5
2.0
Ι
Ι
T
R
j
L
= 25 C
Ω
= 10 k
V
25
50
V
Ι
AED01977
TLE 4274
Semiconductor Group
11
1998-11-01
Package Outlines
GPT05155
A
B
A
0.25
M
Typical
9.8
±0.15
2.8
1)
15.65
±0.3
13.4
0...0.15
2.54
0.75
±0.1
1.05
±0.1
1.27
4.4
B
9.25
±0.2
0.05
1)
All metal surfaces tin plated, except area of cut.
C
±0.2
17
±0.3
8.5
1)
10
±0.2
3.7
-0.15
C
2.4
0.5
±0.1
±0.2
4.55
13.5
±0.5
3x
P-TO220-3-1
(Plastic Transistor Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”
Dimensions in mm
TLE 4274
Semiconductor Group
12
1998-11-01
GPT09051
5.4
±0.1
-0.10
6.5
+0.15
A
±0.5
9.9
6.22
-0.2
1
±0.1
±0.15
0.8
0.15
±0.1
max
per side
0.75
2.28
4.57
+0.08
-0.04
0.9
2.3
-0.10
+0.05
B
min
0.51
±0.1
1
+0.08
-0.04
0.5
0...0.15
B
A
0.25
M
0.1
All metal surfaces tin plated, except area of cut.
3x
P-TO252-3-1
(Plastic Transistor Single Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”
Dimensions in mm
SMD = Surface Mounted Device
TLE 4274
Semiconductor Group
13
1998-11-01
A
8˚ max.
B
A
0.25
M
0.1
Typical
9.8
±0.15
±0.2
10
8.5
1)
8
1)
(15)
±0.2
9.25
±0.3
1
0...0.