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SHINDENGEN
D10SD6M
60V 10A
•œ
Switching power supply
•œDC/DC converter
•œHome Appliances, Office Equipment
•œTelecommunication
APPLICATION
•œ
Tj150•Ž
•œ
P
RRSM
avalanche guaranteed
•œFully Isolated Molding
FEATURES
OUTLINE DIMENSIONS
Unit : mm
RATINGS
Dual
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Case : ITO-220
Schottky Rectifiers (SBD)
•œAbsolute Maximum Ratings (If not specified Tc=25•Ž)
Item
Symbol
Conditions
RatingsUnit
Storage Temperature Tstg
-40•`150•Ž
Operating Junction Temperature
Tj
150
•Ž
Maximum Reverse Voltage
VRM
60
V
Repetitive Peak Surge Reverse Voltage
VRRSM
Pulse width 0.5ms, duty 1/40
65
V
Average Rectified Forward Current
IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=120•Ž
10
A
Peak Surge Forward Current
IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125•Ž
100
A
Repetitive Peak Surge Reverse Power
PRRSM
Pulse width 10ƒÊs, Rating of per diode, Tj= 25•Ž
330
W
Dielectric Strength
Vdis Terminals to case, AC 1 minute
1.5
kV
Mounting Torque
TOR(Recommended torque•F0.3N¥m)
0.5
N¥m
•œElectrical Characteristics (If not specified Tc=25•Ž)
Item
Symbol
Conditions
RatingsUnit
Forward Voltage
VF IF=5A, Pulse measurement, Rating of per diode
Max.0.58V
Reverse Current
IR VR=V
RM,
Pulse measurement, Rating of per diode
Max.4.5mA
Junction Capacitance Cj f=1MHz, V
R=10V, Rating of per diode
Typ.200pF
Thermal Resistance
Įjcjunction to case
Max.3.3•Ž/W
ƒÆcfcase to heatsink, Mounting torque=0.5N¥m
Max.1.5
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Forward Voltage
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
D10SD6M
Tc=150
°
C [MAX]
Tc=25
°
C [MAX]
Pulse measurement per diode
Tc=150
°
C [TYP]
Tc=25
°
C [TYP]
Forward Voltage V
F
[V]
Forward Current I
F
[A]
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100
1000
D10SD6M
0.1
1
10
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Reverse Voltage V
R
[V]
Junction Capacitance Cj [pF]
f=1MHz
Tc=25
°
C
TYP
per diode
Junction Capacitance
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Reverse Current
0.01
0.1
1
10
100
1000
0
10
20
30
40
50
60
D10SD6M
Tc=150
°
C [MAX]
Tc=150
°
C [TYP]
Pulse measurement per diode
Tc=125
°
C [TYP]
Tc=100
°
C [TYP]
Tc=75
°
C [TYP]
Reverse Voltage V
R
[V]
Reverse Current I
R
[mA]
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0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
D10SD6M
0.3
Reverse Power Dissipation
Tj = 150
°
C
SIN
0.2
0.5
D=0.05
DC
0.1
0.8
Reverse Voltage V
R
[V]
Reverse Power Dissipation P
R
[W]
0
t
p
V
R
T
D=t
p
/T
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0
t
p
I
O
T
D=t
p
/T
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
D10SD6M
0.3
Forward Power Dissipation
Tj = 150
°
C
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Average Rectified Forward Current I
O
[A]
Forward Power Dissipation P
F
[W]
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0
t
p
I
O
T
D=t
p
/T
0
5
10
15
20
0
20
40
60
80
100
120
140
160
D10SD6M
0.3
Derating Curve
V
R
= 30V
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0
V
R
Case Temperature Tc [
°
C]
Average Rectified Forward Current I
O
[A]
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0
t
p
I
O
T
D=t
p
/T
0
5
10
15
20
0
20
40
60
80
100
120
140
160
D10SD6M
0.3
Derating Curve
V
R
= 30V
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0
V
R
Heatsink Temperature Tf [
°
C]
Average Rectified Forward Current I
O
[A]
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Peak Surge Forward Capability
0
50
100
150
200
1
10
100
D10SD6M
2
5
20
50
I
FSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current I
FSM
[A]
non-repetitive,
sine wave,
Tj=125
°
C before
surge current is applied
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t
p
I
RP
0
V
R
0.5I
RP
V
RP
I
R
P
RRSM
= I
RP
×
V
RP
0
20
40
60
80
100
120
0
50
100
150
SBD
Repetitive Surge Reverse Power Derating Curve
Junction Temperature Tj [
°
C]
P
RRSM
Derating [%]
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0.1
1
10
1
10
100
SBD
Repetitive Surge Reverse Power Capability
Pulse Width t
p
[
µ
s]
P
RRSM
(t
p
) / P
RRSM
(t
p
=10
µ
s) Ratio
t
p
I
RP
0
V
R
0.5I
RP
V
RP
I
R
P
RRSM
= I
RP
×
V
RP