BYT106/1300
Vishay Telefunken
www.vishay.de
•
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
1 (5)
Document Number 86018
Fast Recovery Silicon Power Rectifier
Features
D
Multiple diffusion
D
Low switch on power losses
D
Good soft recovery behaviour
D
Fast forward recovery time
D
Fast reverse recovery time
D
Low reverse current
D
Very good reverse current stability at high tem-
perature
D
Low thermal resistance
Applications
Fast rectifiers in S.M.P.S
Freewheeling diodes and snubber diodes in motor
control circuits
14282
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
=Repetitive peak reverse voltage
V
R
=V
RRM
1300
V
Peak forward surge current
t
p
=10ms,
half sinewave
I
FSM
50
A
Repetitive peak forward current
I
FRM
15
A
Average forward current
I
FAV
5
A
Junction and storage temperature range
T
j
=T
stg
–40...+150
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
2.4
K/W
Junction ambient
R
thJA
85
K/W
BYT106/1300
Vishay Telefunken
www.vishay.de
•
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
2 (5)
Document Number 86018
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=5A
V
F
1.9
V
g
I
F
=5A, T
j
=100
°
C
V
F
1.9
V
Reverse current
V
R
=V
RRM
I
R
10
m
A
V
R
=V
RRM
, T
j
=100
°
C
I
R
0.2
mA
Forward recovery time
I
F
=5A, di
F
/dt
x
50A/
m
s
t
fr
350
ns
Turn on transient peak voltage
F
,
F
m
V
FP
7
V
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
t
rr
120
ns
Characteristics (T
j
= 25
_
C unless otherwise specified)
m
0
40
80
120
160
0.01
0.1
1
10
100
I – Reverse Current (
A
)
R
T
j
– Junction Temperature (
°
C )
200
94 9495
Figure 1. Typ. Reverse Current vs. Junction Temperature
0
0
1
2
3
4
6
I –
A
verage
Forward
Current
(
A
)
FA
V
T
amb
– Ambient Temperature (
°
C )
94 9493
40
80
120
160
200
5
R
thJA
=10K/W
R
thJA
=5K/W
R
thJA
=85K/W
R
thJC
=2.4K/W
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0
0.6
1.2
1.8
2.4
0.01
0.1
1
10
100
I – Forward Current (
A
)
F
V
F
– Forward Voltage ( V )
3.0
94 9494
T
Case
= 25
°
C
T
Case
= 100
°
C
Figure 3. Typ. Forward Current vs. Forward Voltage
0
1
2
3
4
0
200
400
600
800
I
F
– Forward Current ( A )
6
94 9496
5
Q – Reverse Recovery Char
ge ( nC )
rr
Figure 4. Reverse Recovery Charge vs. Forward Current
BYT106/1300
Vishay Telefunken
www.vishay.de
•
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
3 (5)
Document Number 86018
0
50
100
200
300
0
40
80
120
160
t – Reverse Recovery
T
ime for I ( ns )
IRM
–dI
F
/dt – Forward Current Rate of Change ( A/
ms )
350
94 9499
250
150
RM
I
F
= 5A
Figure 5. Reverse Recovery Time for I
RM
vs.
Forward Current Rate of Change
0
I – Reverse Recovery Current (
A
)
RM
94 9498
5
10
15
20
0
50
100
200
300
–dI
F
/dt – Forward Current Rate of Change ( A/
ms )
350
250
150
I
F
= 5A
Figure 6. Reverse Recovery Current vs.
Forward Current Rate of Change
0
50
100
150
200
250
94 9500
0
50
100
200
300
–dI
F
/dt – Forward Current Rate of Change ( A/
ms )
350
250
150
t – Reverse Recovery
T
ime ( ns )
rr
Figure 7. Reverse Recovery Time vs.
Forward Current Rate of Change
0
200
400
600
800
1200
Q – Reverse Recovery Char
ge ( nC )
rr
94 9497
1000
0
50
100
200
300
–dI
F
/dt – Forward Current Rate of Change ( A/
ms )
350
250
150
I
F
= 5A
Figure 8. Reverse Recovery Charge vs.
Forward Current Rate of Change
BYT106/1300
Vishay Telefunken
www.vishay.de
•
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
5 (5)
Document Number 86018
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
