4N25/ 4N26/ 4N27/ 4N28
Vishay Telefunken
Rev. A4, 11–Jan–99
79
Optocoupler with Phototransistor Output
Description
The 4N25/ 4N26/ 4N27/ 4N28 consist of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual-inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Galvanically separated circuits for general purposes
Features
D
Isolation test voltage (RMS) 3.75 kV
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
Low coupling capacity of typical 1 pF
D
Current Transfer Ratio (CTR) of typical 100%
D
Low temperature coefficient of CTR
95 10532
6
5
4
2
3
1
C
E
A (+) C (–)
n.c.
95 10805
B
Order Instruction
Ordering Code
CTR Ranking
Remarks
4N25/ 4N26
>20%
4N27/ 4N28
>10%
4N25/ 4N26/ 4N27/ 4N28
Vishay Telefunken
Rev. A4, 11–Jan–99
80
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
5
V
Forward current
I
F
60
mA
Forward surge current
t
p
≤
10
m
s
I
FSM
3
A
Power dissipation
T
amb
≤
25
°
C
P
V
100
mW
Junction temperature
T
j
125
°
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector base voltage
V
CBO
70
V
Collector emitter voltage
V
CEO
30
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Peak collector current
t
p
/T = 0.5, t
p
≤
10 ms
I
CM
100
mA
Power dissipation
T
amb
≤
25
°
C
P
V
150
mW
Junction temperature
T
j
125
°
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
V
IO
1)
3.75
kV
Total power dissipation
T
amb
≤
25
°
C
P
tot
250
mW
Ambient temperature range
T
amb
–55 to +100
°
C
Storage temperature range
T
stg
–55 to +125
°
C
Soldering temperature
2 mm from case, t
≤
10 s
T
sd
260
°
C
1)
Related to standard climate 23/50 DIN 50014
4N25/ 4N26/ 4N27/ 4N28
Vishay Telefunken
Rev. A4, 11–Jan–99
81
Electrical Characteristics
(T
amb
= 25
°
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.5
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector base voltage
I
C
= 100
m
A
V
CBO
70
V
Collector emitter voltage
I
E
= 1 mA
V
CEO
30
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector dark current
V
CB
= 10 V
I
CBO
0.1
20
nA
Collector dark current
V
CE
= 10 V
I
CEO
3.5
50
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Isolation test voltage
(RMS)
f = 50 Hz, t = 2 s
V
IO
1)
3.75
kV
Isolation resistance
V
IO
= 1 kV,
40% relative humidity
R
IO
1)
10
12
W
Collector emitter
saturation voltage
I
F
= 50 mA, I
C
= 2 mA
V
CEsat
0.5
V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
W
f
c
110
kHz
Coupling capacitance
f = 1 MHz
C
k
1
pF
1)
Related to standard climate 23/50 DIN 50014
Current Transfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I
C
/I
F
V
CE
= 10 V, I
F
= 10 mA
4N25, 4N26
CTR
0.2
1
C F
CE
F
4N27, 4N28
CTR
0.1
1
4N25/ 4N26/ 4N27/ 4N28
Vishay Telefunken
Rev. A4, 11–Jan–99
82
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Turn-on time
V
CE
= 10 V, I
C
= 10 mA, R
L
= 100
W
(see figure 1)
t
on
4.0
m
s
Turn-off time
CE
C
L
(
g
)
t
off
3.0
m
s
Turn-on time
V
CE
= 5 V, I
F
= 10 mA, R
L
= 1 k
W
(see figure 2)
t
on
9.0
m
s
Turn-off time
CE
F
L
(
g
)
t
off
18.0
m
s
Channel I
Channel II
100
W
50
W
+ 10 V
Oscilloscope
R
L
≥
1 M
W
C
L
≤
20 pF
I
C
= 10 mA ; Adjusted
through
input amplitude
I
F
0
95 10793
I
F
R
G
= 50
W
t
p
= 50
ms
t
p
T +
0.01
Figure 1. Test circuit, non-saturated operation
Channel I
Channel II
1 k
W
50
W
+ 5 V
Oscilloscope
I
C
I
F
= 10 mA
I
F
0
95 10844
R
L
≥
1 M
W
C
L
≤
20 pF
R
G
= 50
W
t
p
= 50
ms
t
p
T +
0.01
Figure 2. Test circuit, saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse dura-
tion
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 3. Switching times
4N25/ 4N26/ 4N27/ 4N28
Vishay Telefunken
Rev. A4, 11–Jan–99
83
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0
50
100
150
200
250
300
0
40
80
120
P
–
T
otal Power Dissipation ( mW
)
T
amb
– Ambient Temperature (
°
C )
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 4. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )
96 11862
F
I – Forward Current ( mA
)
Figure 5. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0
10 20 30 40 50 60 70 80
T
amb
– Ambient Temperature (
°
C
)
96 11874
CTR – Relative Current
T
ransfer
Ratio
rel
V
CE
=10V
I
F
=10mA
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
1
10
100
1000
10000
0
10 20 30 40 50 60 70 80 90 100
T
amb
– Ambient Temperature (
°
C
)
96 11875
I – Collector Dark Current,
CEO
with open Base ( nA
)
V
CE
=10V
I
F
=0
Figure 7. Collector Dark Current vs.
Ambient Temperature
0.001
0.010
0.100
1.000
1
10
100
I
F
– Forward Current ( mA )
96 11876
I – Collector Base Current ( mA
)
CB
V
CB
=10V
Figure 8. Collector Base Current vs. Forward Current
0.01
0.10
1.00
10.00
100.00
0.1
1.0
10.0
100.0
I
F
– Forward Current ( mA )
96 11904
V
CE
=10V
I – Collector Current ( mA
)
C
Figure 9. Collector Current vs. Forward Current
4N25/ 4N26/ 4N27/ 4N28
Vishay Telefunken
Rev. A4, 11–Jan–99
84
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
V
CE
– Collector Emitter Voltage ( V
)
96 11905
I – Collector Current ( mA
)
C
20mA
10mA
5mA
2mA
1mA
I
F
=50mA
Figure 10. Collector Current vs. Collector Emitter Voltage
1
10
0
0.2
0.4
0.6
0.8
1.0
V
– Collector Emitter Saturation
V
oltage (
V
)
CEsat
I
C
– Collector Current ( mA )
100
95 10972
CTR=50%
20%
10%
Figure 11. Collector Emitter Saturation Voltage vs.
Collector Current
0.01
0.1
1
10
0
200
400
600
800
1000
h – DC Current Gain
FE
I
C
– Collector Current ( mA )
100
95 10973
V
CE
=10V
5V
Figure 12. DC Current Gain vs. Collector Current
0.1
1
10
1
10
100
1000
CTR – Current
T
ransfer Ratio ( % )
I
F
– Forward Current ( mA )
100
95 10976
V
CE
=20V
Figure 13. Current Transfer Ratio vs. Forward Current
0
5
10
15
0
10
20
30
40
50
I
F
– Forward Current ( mA )
20
95 10974
t / t –
T
urn on /
T
urn
of
f
T
ime ( s )
of
f
m
on
Saturated Operation
V
S
=5V
R
L
=1k
W
t
off
t
on
Figure 14. Turn on / off Time vs. Forward Current
0
2
4
6
I
C
– Collector Current ( mA )
10
95 10975
t / t –
T
urn on /
T
urn
of
f
T
ime ( s )
of
f
m
on
Non Saturated
Operation
V
S
=10V
R
L
=100
W
t
off
t
on
0
5
10
15
20
8
Figure 15. Turn on / off Time vs. Collector Current
4N25/ 4N26/ 4N27/ 4N28
Vishay Telefunken
Rev. A4, 11–Jan–99
85
XXXXXX
0884
918 A TK 63
15090
Type
Date
Code
(YM)
Coupling
System
Indicator
Company
Logo
Production
Location
Safety
Logo
V
D
E
Figure 16. Marking example
Dimensions in mm
14770
weight: 0.50 g
creepage distance:
y
6 mm
air path:
y
6 mm
after mounting on PC board