TSTS710.
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.de
•
FaxBack +1-408-970-5600
Document Number 81047
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
TSTS710. series are infrared emitting diodes in stan-
dard GaAs technology in a hermetically sealed TO–18
package. Their glass lenses provide a very high ra-
diant intensity without external optics.
Features
D
Very high radiant intensity
D
Suitable for pulse operation
D
Narrow angle of half intensity
ϕ
=
±
5
°
D
Peak wavelength
l
p
= 950 nm
D
High reliability
D
Good spectral matching to Si photodetectors
94 8483
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
5
V
Forward Current
T
case
x
25
°
C
I
F
250
mA
Peak Forward Current
t
p
/T = 0.5, t
p
x
100
m
s,
T
case
x
25
°
C
I
FM
500
mA
Surge Forward Current
t
p
x
100
m
s
I
FSM
2.5
A
Power Dissipation
P
V
170
mW
T
case
x
25
°
C
P
V
500
mW
Junction Temperature
T
j
100
°
C
Storage Temperature Range
T
stg
–55...+100
°
C
Thermal Resistance Junction/Ambient
R
thJA
450
K/W
Thermal Resistance Junction/Case
R
thJC
150
K/W
TSTS710.
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
•
FaxBack +1-408-970-5600
Document Number 81047
t
p
– Pulse Duration ( ms )
94 8003 e
10
0
10
1
10
1
10
–1
10
–1
10
0
10
2
10
–2
I – Forward Current (
A
)
F
t
p
/ T = 0.01
I
FSM
= 2.5 A ( Single Pulse )
0.05
0.1
0.2
0.5
Figure 3. Pulse Forward Current vs. Pulse Duration
0
1
2
3
V
F
– Forward Voltage ( V )
4
94 7996 e
10
1
10
0
10
2
10
3
10
4
10
–1
I – Forward Current ( mA
)
F
Figure 4. Forward Current vs. Forward Voltage
0
20
40
60
80
0.7
0.8
0.9
1.0
1.1
1.2
V
– Relative Forward
V
oltage
Frel
T
amb
– Ambient Temperature (
°
C )
100
94 7990 e
I
F
= 10 mA
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
94 8001 e
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I
F
– Forward Current ( mA )
I – Radiant Intensity ( mW/sr )
e
TSTS 7101
TSTS 7102
TSTS 7103
t
p
/ T = 0.01 , t
p
= 20
ms
Figure 6. Radiant Intensity vs. Forward Current
– Radiant Power ( mW
)
e
I
F
– Forward Current ( mA )
94 7977 e
F
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Figure 7. Radiant Power vs. Forward Current
–10
10
50
0
100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
T
amb
– Ambient Temperature (
°
C )
140
94 7993 e
F
I
F
= 20 mA
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
TSTS710.
Vishay Telefunken
5 (5)
Rev. 2, 20-May-99
www.vishay.de
•
FaxBack +1-408-970-5600
Document Number 81047
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
